BAS40-04LT1G, SBAS40-04LT1G Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features www.onsemi.com 40 VOLTS SCHOTTKY BARRIER DIODES • Extremely Fast Switching Speed • Low Forward Voltage • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 40 V Forward Power Dissipation @ TA = 25°C Derate above 25°C PF 225 1.8 mW mW/°C TJ, Tstg −55 to +150 °C Forward Continuous Current IFM 120 mA Single Forward Current tv1s t v 10 ms IFSM Thermal Resistance (Note 1) Junction−to−Ambient (Note 2) RqJA Operating Junction and Storage Temperature Range ANODE 1 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 @ minimum pad. 2. FR−4 @ 1.0 x 1.0 in pad. CATHODE 2 3 CATHODE/ANODE MARKING DIAGRAM CB MG G 1 mA 200 600 508 311 SOT−23 (TO−236) CASE 318 STYLE 11 CB M G = Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† BAS40−04LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SBAS40−04LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1997 October, 2016 − Rev. 12 1 Publication Order Number: BAS40−04LT1/D BAS40−04LT1G, SBAS40−04LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Reverse Breakdown Voltage (IR = 10 mA) V(BR)R Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT Reverse Leakage (VR = 25 V) IR Forward Voltage (IF = 1.0 mA) VF Forward Voltage (IF = 10 mA) VF Forward Voltage (IF = 40 mA) VF Min Max 40 − − 5.0 − 1.0 − 380 − 500 − 1.0 Unit V pF mA mV mV V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. IR , REVERSE CURRENT (μA) 100 10 150°C 1.0 125°C 85°C 25°C -40°C 0.1 0 0.1 TA = 150°C 125°C 10 85°C 1.0 0.1 25°C 0.01 0.2 0.3 -55°C 0.4 0.001 0.5 0.6 0.7 0 0.8 5.0 VF, FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 10 15 VR, REVERSE VOLTAGE (VOLTS) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 5.0 20 Figure 2. Reverse Current versus Reverse Voltage 3.5 C T, CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance www.onsemi.com 2 35 40 25 BAS40−04LT1G, SBAS40−04LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE−ANODE END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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