ON MGW21N60ED Insulated gate bipolar transistor Datasheet

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by MGW21N60ED/D
SEMICONDUCTOR TECHNICAL DATA
 N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Its new 600V IGBT technology is
specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast
switching characteristics and results in efficient operation at high
frequencies. Co–packaged IGBTs save space, reduce assembly
time and cost. This new E–series introduces an energy efficient,
ESD protected, and rugged short circuit device.
• Industry Standard TO–247 Package
• High Speed: Eoff = 65 mJ/A typical at 125°C
• High Voltage Short Circuit Capability – 10 ms minimum at
125°C, 400 V
• Low On–Voltage — 2.1 V typical at 20 A, 125°C
• Soft Recovery Free Wheeling Diode is included in the Package
• Robust High Voltage Termination
• ESD Protection Gate–Emitter Zener Diodes
IGBT IN TO–247
21 A @ 90°C
31 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
ON–VOLTAGE
C
G
G
C
E
CASE 340K–01
STYLE 4
TO–247 AE
E
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
600
Vdc
Collector–Gate Voltage (RGE = 1.0 MΩ)
VCGR
600
Vdc
Gate–Emitter Voltage — Continuous
VGE
± 20
Vdc
Collector Current — Continuous @ TC = 25°C
Collector Current — Continuous @ TC = 90°C
Collector Current — Repetitive Pulsed Current (1)
IC25
IC90
ICM
31
21
42
Adc
PD
142
1.14
Watts
W/°C
TJ, Tstg
– 55 to 150
°C
tsc
10
ms
RθJC
RθJC
RθJA
0.88
1.4
45
°C/W
TL
260
°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)
Thermal Resistance — Junction to Case – IGBT
Thermal Resistance — Junction to Diode
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
Apk
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
IGBT
 Motorola
Motorola, Inc.
1997 Device
Data
1
MGW21N60ED
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
600
—
—
870
—
—
mV/°C
15
—
—
Vdc
—
—
—
—
10
200
—
—
50
—
—
—
1.7
1.5
2.2
2.1
—
2.5
4.0
—
6.0
10
8.0
—
mV/°C
gfe
—
8.6
—
Mhos
pF
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25 µAdc)
Temperature Coefficient (Positive)
V(BR)CES
Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)
BVECS
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)
ICES
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)
IGES
Vdc
µAdc
µAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 10 Adc)
(VGE = 15 Vdc, IC = 10 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 20 Adc)
VCE(on)
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
VGE(th)
Forward Transconductance (VCE = 10 Vdc, IC = 20 Adc)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Cies
—
1605
—
Coes
—
146
—
Cres
—
23
—
td(on)
—
29
—
tr
—
60
—
td(off)
—
238
—
tf
—
140
—
Eoff
—
0.8
1.15
Eon
—
0.6
—
Total Switching Loss
Ets
—
1.4
—
Turn–On Delay Time
td(on)
—
28
—
tr
—
62
—
td(off)
—
338
—
tf
—
220
—
Eoff
—
1.3
—
Turn–On Switching Loss
Eon
—
0.8
—
Total Switching Loss
Ets
—
2.1
—
Gate Charge
QT
—
86
—
Q1
—
18
—
Q2
—
39
—
—
—
1.7
1.6
1.3
2.0
1.9
—
2.3
Output Capacitance
(VCE = 25 Vdc,
Vdc VGE = 0 Vdc,
Vdc
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
(VCC = 360 Vdc,
Vd IC = 20 Ad
Adc,
VGE = 15 Vdc,
Vd L = 300 mH
H,
RG = 20 Ω)
Energy losses include “tail”
Turn–On Switching Loss
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
(VCC = 360 Vdc,
Vd IC = 20 Ad
Adc,
VGE = 15 Vdc,
Vd L = 300 mH
H,
RG = 20 Ω, TJ = 125°C)
125 C)
Energy losses include “tail”
(VCC = 360 Vdc,
Vdc IC = 20 Adc
Adc,
VGE = 15 Vdc)
ns
mJ
ns
mJ
nC
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 10 Adc)
(IEC = 10 Adc, TJ = 125°C)
(IEC = 17 Adc)
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2
VFEC
Vdc
(continued)
Motorola IGBT Device Data
MGW21N60ED
ELECTRICAL CHARACTERISTICS — continued (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
trr
—
94
—
ns
ta
—
32
—
tb
—
62
—
QRR
—
0.16
—
µC
trr
—
145
—
ns
ta
—
50
—
tb
—
95
—
QRR
—
0.75
—
—
13
—
DIODE CHARACTERISTICS — continued
Reverse Recovery Time
((IF = 20 Adc,
Ad , VR = 360 Vd
Vdc,,
dIF/dt = 200 A/µs)
Reverse Recovery Stored Charge
Reverse Recovery Time
((IF = 20 Adc,
Ad , VR = 360 Vd
Vdc,,
dIF/dt = 200 A/µs, TJ = 125°C)
Reverse Recovery Stored Charge
µC
INTERNAL PACKAGE INDUCTANCE
LE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
60
20 V
12.5 V
40
VGE = 10 V
20
0
15 V
20 V
12.5 V
40
VGE = 10 V
20
0
2
0
4
6
6
8
Figure 2. Output Characteristics
30
20
TJ = 125°C
10
25°C
0
7
9
11
13
15
17
VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
40
5
4
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
VCE = 100 V
5 ms PULSE WIDTH
50
2
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
60
IC , COLLECTOR CURRENT (AMPS)
17.5 V
TJ = 125°C
IC , COLLECTOR CURRENT (AMPS)
IC , COLLECTOR CURRENT (AMPS)
60
15 V
17.5 V
TJ = 25°C
nH
2.3
IC = 20 A
2.1
15 A
1.9
1.7
10 A
VGE = 15 V
80 ms PULSE WIDTH
1.5
–50
–25
0
25
50
75
100
125
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Transfer Characteristics
Figure 4. Collector–To–Emitter Saturation
Voltage versus Junction Temperature
Motorola IGBT Device Data
150
3
MGW21N60ED
TJ = 25°C
VGE = 0 V
3200
C, CAPACITANCE (pF)
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
4000
2400
Cies
Coes
1600
Cres
800
0
0
5
10
15
20
12
Q1
Q2
8
TJ = 25°C
VCC = 300 V
IC = 20 A
4
0
0
25
50
100
75
125
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
QG, TOTAL GATE CHARGE (nC)
Figure 5. Capacitance Variation
Figure 6. Gate–To–Emitter Voltage versus
Total Charge
2.5
TJ = 125°C
VDD = 360 V
VGE = 15 V
2.5
ETS , TOTAL ENERGY LOSSES (mJ)
ETS , TOTAL ENERGY LOSSES (mJ)
QT
16
25
3.0
IC = 20 A
2.0
15 A
1.5
1.0
10 A
0.5
0
20
VCC = 360 V
VGE = 15 V
RG = 20 W
2.0
IC = 20 A
15 A
1.5
10 A
1.0
0.5
0
5
10
20
30
40
50
–50
–25
0
50
25
75
100
RG, GATE RESISTANCE (OHMS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Total Energy Losses versus
Gate Resistance
Figure 8. Total Energy Losses versus
Junction Temperature
125
1.6
Eoff , TURN–OFF ENERGY LOSSES (mJ)
ETS , TOTAL ENERGY LOSSES (mJ)
1.5
TJ = 125°C
VCC = 360 V
VGE = 15 V
RG = 20 W
2.0
1.2
0.8
0.4
TJ = 125°C
VDD = 360 V
VGE = 15 V
1.1
15 A
0.9
0.7
10 A
0.5
0
0
4
IC = 20 A
1.3
5
10
15
20
5
15
25
35
IC, COLLECTOR CURRENT (AMPS)
RG, GATE RESISTANCE (OHMS)
Figure 9. Total Energy Losses versus
Collector Current
Figure 10. Turn–Off Losses versus
Gate Resistance
45
Motorola IGBT Device Data
MGW21N60ED
VCC = 360 V
VGE = 15 V
RG = 20 W
1.6
Eoff , TURN–OFF ENERGY LOSSES (mJ)
Eoff , TURN–OFF ENERGY LOSSES (mJ)
1.4
IC = 20 A
1.2
15 A
10 A
0.8
0.4
1.0
0.8
0.6
0.4
0.2
0
0
–50
–25
0
25
50
75
100
125
0
150
5
15
10
TJ, JUNCTION TEMPERATURE (°C)
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Turn–Off Losses versus
Junction Temperature
Figure 12. Turn–Off Losses versus
Collector Current
100
20
100
IC , COLLECTOR CURRENT (AMPS)
IF , INSTANTANEOUS FORWARD
CURRENT (AMPS)
TJ = 125°C
VCC = 360 V
VGE = 15 V
RG = 20 W
1.2
TJ = 125°C
10
25°C
1
10
TJ = 125°C
RGE = 20 W
VGE = 15 V
1
0.5
1.0
1.5
2.0
VFEC, EMITTER–TO–COLLECTOR VOLTAGE (VOLTS)
Figure 13. Forward Characteristics
versus Current
Motorola IGBT Device Data
2.5
1
10
100
1000
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 14. Reverse Biased Safe
Operating Area
5
MGW21N60ED
PACKAGE DIMENSIONS
0.25 (0.010)
M
–T–
–Q–
T B M
E
–B–
C
4
L
U
A
R
1
K
2
3
–Y–
P
V
H
F
G
D
0.25 (0.010)
M
Y Q
J
NOTES:
DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
CONTROLLING DIMENSION: MILLIMETER.
DIM
A
B
C
D
E
F
G
H
J
K
L
P
Q
R
U
V
MILLIMETERS
MIN
MAX
19.7
20.3
15.3
15.9
4.7
5.3
1.0
1.4
1.27 REF
2.0
2.4
5.5 BSC
2.2
2.6
0.4
0.8
14.2
14.8
5.5 NOM
3.7
4.3
3.55
3.65
5.0 NOM
5.5 BSC
3.0
3.4
INCHES
MIN
MAX
0.776
0.799
0.602
0.626
0.185
0.209
0.039
0.055
0.050 REF
0.079
0.094
0.216 BSC
0.087
0.102
0.016
0.031
0.559
0.583
0.217 NOM
0.146
0.169
0.140
0.144
0.197 NOM
0.217 BSC
0.118
0.134
S
CASE 340K–01
ISSUE A
STYLE 4:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
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6
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MGW21N60ED/D
Motorola IGBT
Device Data
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