ACE18010M04N N-Channel 100-V MOSFET Description The ACE18010M40N uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Features Low rDS(on) trench technology Low thermal impedance Fast switching speed PRODUCT SUMMARY rDS(on) (mΩ) ID(A) 6.5 @ VGS = 10V 100 180A 8.5 @ VGS = 5.5V VDS (V) Applications LED Inverter Circuits DC/DC Conversion Circuits Motor drives Absolute Maximum Ratings Parameter Symbol Limit Units Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V ID 180 A IDM 700 A TA=25℃ IS 180 A TA=25℃ PD 300 W EAS 500 mJ TJ/TSTG -55~175 ℃ Continuous Drain Current a Pulsed Drain Current TA=25℃ b Continuous Source Current (Diode Conduction) Power Dissipation a a d Single Pulse Avalanche Energy Operating temperature / storage temperature THERMAL RESISTANCE RATINGS Symbol Parameter Maximum Junction-to-Ambient C t <= 10 sec Steady State RθJA Maximum 62.5 0 Units °C/W Notes a. Package Limited b. Pulse width limited by maximum junction temperature c. Surface Mounted on 1” x 1” FR4 Board. d. Tj=25 °C, L=0.51mH, ID=45A, VDD=50V VER 1.1 1 ACE18010M04N N-Channel 100-V MOSFET Packaging Type TO-220 Ordering information ACE18010M04N XX + H Halogen - free Pb - free ZM：TO-220 VER 1.1 2 ACE18010M04N N-Channel 100-V MOSFET Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit Static Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) VDS = VGS, ID = 250 uA IGSS VDS= 0 V, VGS= ±20 V ±100 VDS = 80 V, VGS = 0 V 1 VDS = 80 V, VGS = 0 V, TJ = 55°C 10 IDSS VDS = 5 V, VGS = 10 V 1 V nA uA On-State Drain Current ID(on) Drain-Source On-Resistance rDS(on) Forward Transconductance gfs VDS = 15 V, ID = 20 A 18 S Diode Forward Voltage VSD IS= 90A, VGS = 0 V 1 V 220 A VGS = 10 V, ID = 20 A 6.5 VGS = 5.5V, ID = 16A 8.5 mΩ Dynamic Total Gate Charge Qg Gate-Source Charge Gate-Drain Charge Qgs Qgd Turn-On Delay Time td(on) Rise Time tr VDS= 50V, RL= 2.5Ω, ID = 20 A, 37 Turn-Off Delay Time td(off) VGEN= 10 V, RGEN= 6 Ω 117 Fall Time tf 51 Input Capacitance 8681 Output Capacitance Ciss Coss Reverse Transfer Capacitance Crss 78 VDS= 50V, VGS = 5.5 V, ID= 20 A 42 nC 27 49 VDS = 15 V, VGS = 0 V, f = 1 MHz 730 ns pF 331 Note : a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing VER 1.1 3 ACE18010M04N N-Channel 100-V MOSFET Typical Performance Characteristics VER 1.1 4 ACE18010M04N N-Channel 100-V MOSFET VER 1.1 5 ACE18010M04N N-Channel 100-V MOSFET Packing Information TO-220 VER 1.1 6 ACE18010M04N N-Channel 100-V MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 7