Renesas BCR3LM-14LB-A8 Triac Datasheet

Preliminary Datasheet
BCR3LM-14LB
Triac
R07DS0067EJ0100
Rev.1.00
Jul 27, 2010
Medium Power Use
Features




 The Product guaranteed maximum junction
temperature 150C
 Insulated Type
 Planar Type
 UL Recognized: File No. E223904
IT (RMS) : 3 A
VDRM : 800 V (Tj = 125C)
IFGTI, IRGTI, IRGTIII : 30 mA
Viso : 1800 V
Outline
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
2
3
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
1
1
2 3
Applications
Washing machine, inversion operation of capacitor motor, and other general controlling devices
Maximum Ratings
Parameter
Symbol
Repetitive peak off-state voltageNote1
VDRM
Non-repetitive peak off-state voltageNote1
VDSM
R07DS0067EJ0100 Rev.1.00
Jul 27, 2010
Voltage class
14
800
700
840
Unit
Conditions
V
V
V
Tj = 125C
Tj = 150C
Page 1 of 7
BCR3LM-14LB
Preliminary
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
3.0
Unit
A
Surge on-state current
ITSM
30
A
I2t
3.7
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
5
0.5
10
2
– 40 to +150
– 40 to +150
1.5
1800
W
W
V
A
C
C
g
V
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 130C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25C, AC 1 minute,
T1  T2  G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.6
Unit
mA
V
Test conditions
Tj = 150C, VDRM applied
Tc = 25C, ITM = 4.5 A,
Instantaneous measurement
Gate trigger voltageNote2



VFGT
VRGT
VRGT
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
Gate trigger currentNote2



IFGT
IRGT
IRGT
—
—
—
—
—
—
30
30
30
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
VGD
Rth (j-c)
0.2/0.1
—
—
—
—
5.2
V
C/W
Tj = 125C/150C, VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
5/1
—
—
V/s
Tj = 125C/150C
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutating voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = –1.5 A/ms
3. Peak off-state voltage
VD = 400 V
R07DS0067EJ0100 Rev.1.00
Jul 27, 2010
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 7
BCR3LM-14LB
Preliminary
Performance Curves
102
7
5
3
2
Tj = 25°C
–1
Gate Voltage (V)
20
15
10
5
2 3
5 7 10
1
2 3
5 7 10
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
0
IRGT I
VGD = 0.1V
–1
IFGT I, IRGT III
IGM = 2A
100 2 3 5 7101 2 3 5 7102 2 3 5 7103 2 3 5 7104
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
25
Conduction Time (Cycles at 60Hz)
2
10 7
5
3
2
–2
10
30
On-State Voltage (V)
10
7
5
3 VGM=10V
PG(AV) = 0.5W
2
PGM = 5W
1
10
7
5
VGT
3
2
10
7
5
3
2
35
0 0
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
10
Tj = 150°C
Surge On-State Current (A)
40
101
7
5
3
2
100
7
5
3
2
Rated Surge On-State Current
103
7
5
3
2
102
7
5
2
Typical Example
IRGT III
IFGT I, IRGT I
3
2
101
–60 –40–20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
7
5
Typical Example
3
2
102
7
5
3
2
1
10
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
R07DS0067EJ0100 Rev.1.00
Jul 27, 2010
Transient Thermal Impedance (°C/W)
On-State Current (A)
Maximum On-State Characteristics
102 2 3 5 7 103 2 3 5 7 104
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10–1 2 3 5 7100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60Hz)
Page 3 of 7
BCR3LM-14LB
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
5.0
160
4.5
140
4.0
Case Temperature (°C)
On-State Power Dissipation (W)
Maximum On-State Power Dissipation
360° Conduction
3.5 Resistive,
3.0 inductive loads
2.5
2.0
1.5
1.0
80
60
40
360° Conduction
inductive loads
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
120 × 120 × t2.3
140
120
100
100 × 100 × t2.3
60 × 60 × t2.3
80
60 All fins are black painted
aluminum and greased
40 Curves apply regardless of
conduction angle
20 Resistive, inductive loads
Natural convection
0
0
Ambient Temperature (°C)
160
Natural convection
No fins
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
140
120
100
80
60
40
20
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0.5
1.0
1.5
2.0
2.5
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
6
10
7
5
3
2
5
10
7
5
3
2
4
10
7
5
3
2
3
10
7
5
3
2
2
10
Typical Example
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
R07DS0067EJ0100 Rev.1.00
Jul 27, 2010
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Ambient Temperature (°C)
of conduction angle
100
20 Resistive,
0.5
0
0
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
120 Curves apply regardless
3.0
3
10
7
5
Typical Example
3
2
102
7
5
3
2
101
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Page 4 of 7
BCR3LM-14LB
Preliminary
Breakover Voltage vs.
Junction Temperature
Distribution
T2+, G–
Typical Example
102
7
5
3
2
101
7
5
3 T +, G+
2 2– – Typical Example
T2 , G
100
–60 –40–20 0 20 40 60 80 100 120 140 160
Breakover Voltage (t°C)
× 100 (%)
Breakover Voltage (25°C)
103
7
5
3
2
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Typical Example
Tj = 125°C
140
120
100
80
III Quadrant
60
40
I Quadrant
20
0 1
10 2 3 5 7102 2 3 5 7103 2 3 5 7104
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Junction Temperature (°C)
160
140
Typical Example
Tj = 150°C
120
100
80
60
III Quadrant
40
I Quadrant
20
0 1
10 2 3 5 7102 2 3 5 7103 2 3 5 7104
Rate of Rise of Off-State Voltage (V/μs)
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
Commutation Characteristics (Tj=150°C)
102
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
101
7
5
3
2
Minimum
Characteristics
Value
I Quadrant
III Quadrant
100 0
1
2
3
10 2 3 5 710 2 3 5 710 2 3 5 7 10
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0067EJ0100 Rev.1.00
Jul 27, 2010
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Latching Current (mA)
Latching Current vs.
Junction Temperature
102
7
5
3
2
101
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
Typical Example
Tj = 150°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
III Quadrant
I Quadrant
Minimum
Characteristics
Value
0
10 0
1
2
3
10 2 3 5 710 2 3 5 710 2 3 5 7 10
Rate of Decay of On-State
Commutating Current (A/ms)
Page 5 of 7
BCR3LM-14LB
Preliminary
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Gate Trigger Current vs.
Gate Current Pulse Width
3
10
7
5
Typical Example
IRGT III
IRGT I
3
2
IFGT I
102
7
5
3
2
101 0
10
2 3
5 7 10
1
2 3
5 7 10
2
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
Recommended Circuit Values Around The Triac
Load
C1
A
6V
V
Test Procedure I
R1
A
6V
330Ω
V
330Ω
Test Procedure II
C0
R0
C1 = 0.1 to 0.47μF C0 = 0.1μF
R1 = 47 to 100Ω
R0 = 100Ω
6Ω
A
6V
V
330Ω
Test Procedure III
R07DS0067EJ0100 Rev.1.00
Jul 27, 2010
Page 6 of 7
BCR3LM-14LB
Preliminary
Package Dimensions
Package Name
TO-220FL
JEITA Package Code
⎯
Previous Code
TO-220FL
RENESAS Code
PRSS0003AF-A
Unit: mm
6.5 ± 0.3
3.0 ± 0.3
2.8 ± 0.2
φ 3.2 ± 0.2
3.6 ± 0.3
12.5 ± 0.5
15.0 ± 0.3
10.0 ± 0.3
MASS[Typ.]
1.5g
1.15 ± 0.2
1.15 ± 0.2
0.75 ± 0.15
0.40 ± 0.15
4.5 ± 0.2
2.54 ± 0.25
2.6 ± 0.2
2.54 ± 0.25
Order Code
Lead form
Straight type
Lead form
Standard packing
Plastic Magazine (Tube)
Plastic Magazine (Tube)
Quantity
50
50
Standard order code
Type name
Type name – Lead forming code
Standard order
code example
BCR3LM-14LB
BCR3LM-14LB-A8
Note : Please confirm the specification about the shipping in detail.
R07DS0067EJ0100 Rev.1.00
Jul 27, 2010
Page 7 of 7
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