BSI BS616UV1010AI Ultra low power/voltage cmos sram 64k x 16 bit Datasheet

Ultra Low Power/Voltage CMOS SRAM
64K X 16 bit
BS616UV1010
BSI
„ DESCRIPTION
„ FEATURES
• Ultra low operation voltage : 1.8 ~ 3.6V
• Ultra low power consumption :
Vcc = 2.0V
C-grade : 10mA (Max.) operating current
I- grade : 15mA (Max.) operating current
0.01uA (Typ.) CMOS standby current
Vcc = 3.0V
C-grade : 15mA (Max.) operating current
I- grade : 20mA (Max.) operating current
0.02uA (Typ.) CMOS standby current
• High speed access time :
-15
150ns (Max.) at Vcc = 3.0V
• Input levels are CMOS-compatible
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
The BS616UV1010 is a high performance, ultra low power CMOS Static
Random Access Memory organized as 65,536 words by 16 bits and
operates from a wide range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.01uA and maximum access time of 150ns in 2V operation.
Easy memory expansion is provided by an active LOW chip
enable(CE) and active LOW output enable(OE) and three-state output
drivers.
The BS616UV1010 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616UV1010 is available in the JEDEC standard 44-pin TSOP
Type II and 48-pin mini-BGA.
„ PRODUCT FAMILY
PRODUCT
FAMILY
OPERATING
TEMPERATURE
BS616UV1010EC
O
BS616UV1010AC
BS616UV1010EI
BS616UV1010AI
O
+0 C to +70 C
O
O
-40 C to +85 C
Vcc
RANGE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
1
A
LB
BS616UV1010EC
BS616UV1010EI
2
OE
3
A0
4
A1
5
A2
(ICCSB1, Max)
PKG TYPE
(ICC, Max)
Vcc=3.0V
Vcc=3.0V
Vcc=2.0V
Vcc=3.0V
Vcc=2.0V
1.8V ~ 3.6V
150
0.5uA
0.3uA
15mA
10mA
1.8V ~ 3.6V
150
1.5uA
1uA
20mA
15mA
„ PIN CONFIGURATIONS
A4
A3
A2
A1
A0
CE
DQ0
DQ1
DQ2
DQ3
VCC
GND
DQ4
DQ5
DQ6
DQ7
WE
A15
A14
A13
A12
NC
POWER DISSIPATION
STANDBY
Operating
SPEED
(ns)
TSOP2-44
BGA-48-0608
TSOP2-44
BGA-48-0608
„ BLOCK DIAGRAM
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
GND
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
NC
A8
A13
Address
A15
A14
Input
A12
Buffer
A7
A6
A5
A4
16
DQ0
.
.
.
.
NC
.
.
.
.
UB
A3
A4
CE
IO0
C
IO9
IO10
A5
A6
IO1
IO2
D
VSS
IO11
NC
A7
IO3
VCC
E
VCC
IO12
NC
NC
IO4
VSS
F
IO14
IO13
A14
A15
IO5
IO6
G
IO15
NC
A12
A13
WE
IO7
H
NC
A8
A9
A10
A11
NC
Memory Array
Decoder
512 x 2048
Data
Input
Buffer
16
Column I/O
Write Driver
Sense Amp
16
Data
Output
Buffer
DQ15
IO8
512
Row
2048
6
B
18
128
16
Column Decoder
14
CE
WE
OE
UB
LB
Control
Address Input Buffer
A11 A9 A3 A2 A1 A0 A10
Vcc
Gnd
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
R0201-BS616UV1010
1
Revision 2.2
April 2001
BSI
BS616UV1010
„ PIN DESCRIPTIONS
Name
Function
A0-A15 Address Input
These 16 address input select one of the 65,536 x 16-bit words in the RAM.
CE Chip Enable Input
CE is active LOW. Chip enables must be active to read from or write to the device. if
chip enable is not active, the device is deselected and is in a standby power mode.
The DQ pins will be in the high impedance state when the device is deselected.
WE Write Enable Input
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
OE Output Enable Input
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
LB and UB Data Byte Control Input
Lower byte and upper byte data input/output control pins.
DQ0 - DQ15 Data Input/Output
Ports
These 16 bi-directional ports are used to read data from or write data into the RAM.
Vcc
Power Supply
Gnd
Ground
„ TRUTH TABLE
MODE
Not selected
(Power Down)
Output Disabled
CE
WE
OE
LB
UB
DQ0~DQ7
DQ8~DQ15
Vcc CURRENT
H
X
X
X
X
High Z
High Z
ICCSB, ICCSB1
L
H
H
X
X
High Z
High Z
ICC
L
L
Dout
Dout
ICC
Read
L
H
L
H
L
High Z
Dout
ICC
L
H
Dout
High Z
ICC
L
L
Din
Din
ICC
H
L
X
Din
ICC
L
H
Din
X
ICC
Write
R0201-BS616UV1010
L
L
X
2
Revision 2.2
April 2001
BSI
BS616UV1010
„ ABSOLUTE MAXIMUM RATINGS(1)
SYMBOL
V TERM
PARAMETER
„ OPERATING RANGE
RATING
Terminal Voltage with
Respect to GND
-0.5 to
Vcc+0.5
UNITS
RANGE
AMBIENT
TEMPERATURE
Vcc
V
Commercial
0 O C to +70 O C
1.8V ~ 3.6V
T BIAS
Temperature Under Bias
-40 to +125
O
T STG
Storage Temperature
-60 to +150
O
PT
Power Dissipation
1.0
W
I OUT
DC Output Current
20
mA
C
C
O
Industrial
O
-40 C to +85 C
1.8V ~ 3.6V
„ CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
SYMBOL
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
CIN
CDQ
PARAMETER
Input
Capacitance
Input/Output
Capacitance
CONDITIONS
MAX.
UNIT
VIN=0V
6
pF
VI/O=0V
8
pF
1. This parameter is guaranteed and not tested.
„ DC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC )
PARAMETER
NAME
VIL
VIH
PARAMETER
MIN. TYP. (1) MAX.
TEST CONDITIONS
Guaranteed Input Low
(2)
Voltage
Guaranteed Input High
(2)
Voltage
Vcc=2.0V
Vcc=3.0V
Vcc=2.0V
Vcc=3.0V
UNITS
-0.5
--
0.6
0.8
V
1.4
2.0
--
Vcc+0.2
V
IIL
Input Leakage Current
Vcc = Max, VIN = 0V to Vcc
--
--
1
uA
IOL
Output Leakage Current
Vcc = Max, CE = VIH, or OE = VIH,
VI/O = 0V to Vcc
--
--
1
uA
VOL
Output Low Voltage
Vcc = Max, IOL = 1mA
--
--
0.4
V
--
--
V
--
10
VOH
ICC
ICCSB
ICCSB1
Output High Voltage
Vcc = Min, IOH = -0.5mA
Operating Power Supply
Current
CE = VIL, IDQ = 0mA, F = Fmax(3)
Standby Current-TTL
CE = VIH, IDQ = 0mA
Standby Current-CMOS
CE Њ Vcc-0.2V,
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
Vcc=2.0V
Vcc=3.0V
Vcc=2.0V
1.6
2.4
--
Vcc=3.0V
--
--
15
Vcc=2.0V
--
--
0.5
Vcc=3.0V
--
--
1
Vcc=2.0V
--
0.01
0.3
Vcc=3.0V
--
0.02
0.5
Vcc=2.0V
Vcc=3.0V
mA
mA
uA
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC .
„ DATA RETENTION CHARACTERISTICS ( TA = 0oC to + 70oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP.
(1)
MAX.
UNITS
VDR
Vcc for Data Retention
CE Њ Vcc - 0.2V
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
1.5
--
--
V
ICCDR
Data Retention Current
CE Њ Vcc -0.2V
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
--
0.01
0.2
uA
tCDR
Chip Deselect to Data
Retention Time
--
--
ns
--
--
ns
tR
See Retention Waveform
Operation Recovery Time
0
TRC
(2)
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
R0201-BS616UV1010
3
Revision 2.2
April 2001
BSI
BS616UV1010
„ LOW VCC DATA RETENTION WAVEFORM ( CE Controlled )
Data Retention Mode
Vcc
VDR ≥ 1.5V
Vcc
Vcc
tR
t CDR
CE ≥ Vcc - 0.2V
VIH
CE
VIH
„ KEY TO SWITCHING WAVEFORMS
„ AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output
Timing Reference Level
Vcc/0V
5ns
WAVEFORM
0.5Vcc
„ AC TEST LOADS AND WAVEFORMS
1333 Ω
2V
1333 Ω
2V
OUTPUT
OUTPUT
100PF
INCLUDING
JIG AND
SCOPE
2000 Ω
2000 Ω
FIGURE 1A
FIGURE 1B
THEVENIN EQUIVALENT
800 Ω
OUTPUT
OUTPUTS
MUST BE
STEADY
MUST BE
STEADY
MAY CHANGE
FROM H TO L
WILL BE
CHANGE
FROM H TO L
MAY CHANGE
FROM L TO H
WILL BE
CHANGE
FROM L TO H
,
5PF
INCLUDING
JIG AND
SCOPE
INPUTS
DON T CARE:
ANY CHANGE
PERMITTED
CHANGE :
STATE
UNKNOWN
DOES NOT
APPLY
CENTER
LINE IS HIGH
IMPEDANCE
”OFF ”STATE
1.2V
ALL INPUT PULSES
Vcc
GND
90% 90%
10%
→
←
→
10%
← 5ns
FIGURE 2
„ AC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC, Vcc = 2.0V )
READ CYCLE
JEDEC
PARAMETER
NAME
PARAMETER
NAME
t AVAX
t AVQV
tELQV
tBA
tGLQV
tELQX
tBE
tGLQX
tEHQZ
tBDO
tGHQZ
t RC
t AA
t ACS
t BA
t OE
t CLZ
t BE
t OLZ
t CHZ
t BDO
t OHZ
t AXOX
t OH
R0201-BS616UV1010
BS616UV1010-15
MIN. TYP. MAX.
DESCRIPTION
Read Cycle Time
--
--
ns
--
--
150
ns
--
--
150
ns
(LB,UB)
--
--
150
ns
--
--
80
ns
Chip Select Access Time
Output Enable to Output Valid
(CE)
15
--
--
ns
(LB,UB)
15
--
--
ns
Chip Select to Output Low Z
Data Byte Control to Output Low Z
150
(CE)
Address Access Time
Data Byte Control Access Time
UNIT
15
--
--
ns
(CE)
0
--
45
ns
(LB,UB)
Output Enable to Output in Low Z
Chip Deselect to Output in High Z
0
--
40
ns
Output Disable to Output in High Z
0
--
40
ns
Output Disable to Output Address Change
15
--
--
ns
Data Byte Control to Output High Z
4
Revision 2.2
April 2001
BSI
BS616UV1010
„ SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1 (1,2,4)
t RC
ADDRESS
t
t
t OH
AA
OH
D OUT
READ CYCLE2 (1,3,4)
CE
t ACS
t BA
LB,UB
t BE
D OUT
t
t BDO
(5)
CLZ
t
(5)
CHZ
READ CYCLE3 (1,4)
t
RC
ADDRESS
t
AA
OE
t OH
t OE
t OLZ
CE
(5)
t CLZ
t
t OHZ (5)
t CHZ(1,5)
ACS
t BA
LB,UB
t BE
t BDO
D OUT
NOTES:
1. WE is high for read Cycle.
2. Device is continuously selected when CE = VIL.
3. Address valid prior to or coincident with CE transition low.
4. OE = VIL .
5. Transition is measured ± 500mV from steady state with CL = 5pF as shown in Figure 1B.
The parameter is guaranteed but not 100% tested.
R0201-BS616UV1010
5
Revision 2.2
April 2001
BSI
BS616UV1010
„ AC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC, Vcc = 2.0V )
WRITE CYCLE
JEDEC
PARAMETER
PARAMETER
NAME
NAME
tAVAX
t E1LWH
tAVWL
tAVWH
tWLWH
tWHAX
tBW
tWLQZ
tDVWH
tWHDX
tGHQZ
tWC
tCW
tAS
tAW
tWP
tWR
tBW
tWHZ
tDW
tDH
tOHZ
tWHOX
tOW
BS616UV1010-15
MIN. TYP. MAX.
DESCRIPTION
Write Cycle Time
150
Chip Select to End of Write
150
0
150
--
ns
--
--
ns
--
--
ns
--
--
ns
80
--
--
ns
(CE,WE)
0
--
--
ns
(LB,UB)
70
--
--
ns
Address Setup Time
Address Valid to End of Write
Write Pulse Width
Write recovery Time
Date Byte Control to End of Write
--
UNIT
0
--
40
ns
Data to Write Time Overlap
40
--
--
ns
Data Hold from Write Time
0
--
--
ns
Output Disable to Output in High Z
0
--
40
ns
End of Write to Output Active
5
--
--
ns
Write to Output in High Z
„ SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 (1)
t WC
ADDRESS
(3)
t WR
OE
(11)
t CW
(5)
CE
t BW
LB,UB
t AW
WE
(3)
t WP
t AS
(2)
(4,10)
t OHZ
D OUT
t
DH
t DW
D IN
R0201-BS616UV1010
6
Revision 2.2
April 2001
BSI
BS616UV1010
WRITE CYCLE2 (1,6)
t WC
ADDRESS
(11)
t CW
(5)
CE
t BW
LB,UB
t AW
WE
t WR
t WP
(3)
(2)
t
t AS
DH
(4,10)
t WHZ
D OUT
(7)
(8)
t DW
t
DH
(8,9)
D IN
NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE and WE low. All signals
must be active to initiate a write and any one signal can terminate a write by going inactive.
The data input setup and hold timing should be referenced to the second transition edge of
the signal that terminates the write.
3. TWR is measured from the earlier of CE or WE going high at the end of write cycle.
4. During this period, DQ pins are in the output state so that the input signals of opposite phase
to the outputs must not be applied.
5. If the CE low transition occurs simultaneously with the WE low transitions or after the WE
transition, output remain in a high impedance state.
6. OE is continuously low (OE = VIL ).
7. DOUT is the same phase of write data of this write cycle.
8. DOUT is the read data of next address.
9. If CE is low during this period, DQ pins are in the output state. Then the data input signals of
opposite phase to the outputs must not be applied to them.
10. Transition is measured ± 500mV from steady state with CL = 5pF as shown in Figure 1B.
The parameter is guaranteed but not 100% tested.
11. TCW is measured from the later of CE going low to the end of write.
12. The change of Read/Write cycle must accompany with CE or address toggled.
R0201-BS616UV1010
7
Revision 2.2
April 2001
BSI
BS616UV1010
„ ORDERING INFORMATION
BS616UV1010
X X
-- Y Y
SPEED
15: 150ns
GRADE
C: +0oC ~ +70oC
I: -40oC ~ +85oC
PACKAGE
E: TSOP II - 44 PIN
A: BGA-48 PIN(6x8mm)
„ PACKAGE DIMENSIONS
TSOP2-44
R0201-BS616UV1010
8
Revision 2.2
April 2001
BSI
BS616UV1010
„ PACKAGE DIMENSIONS (continued)
NOTES:
1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS.
2: PIN#1 DOT MARKING BY LASER OR PAD PRINT.
1.4 Max.
3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS.
BALL PITCH e = 0.75
D
E
N
D1
E1
8.0
6.0
48
5.25
3.75
E1
e
D1
VIEW A
48 mini-BGA (6 x 8)
R0201-BS616UV1010
9
Revision 2.2
April 2001
BSI
BS616UV1010
REVISION HISTORY
Revision
Description
Date
2.2
2001 Data Sheet release
Apr. 15, 2001
R0201-BS616UV1010
10
Note
Revision 2.2
April 2001
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