Diode Semiconductor Korea MUR405 - - - MUR460 VOLTAGE RANGE: 50 --- 600 V CURRENT: 4.0 A SUPER FAST RECT IFIERS FEATURES Low cos t Low leakage DO - 27 Low forward voltage drop High current capability Eas ily cleaned with alcohol,Is opropanol and s im ilar s olvents The plas tic m aterial carries U/L recognition 94V-0 MECHANICAL DATA Cas e:JEDEC DO--27,m olded plas tic Term inals : Axial lead ,s olderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.041 ounces ,1.15 gram s Dimensions in millimeters Mounting pos ition: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%. MUR MUR MUR MUR MUR MUR MUR MUR UNITS 405 410 415 420 430 440 450 460 Maximum recurrent peak reverse voltage V RR M 50 100 150 200 300 400 500 600 V Maximum RMS voltage V RMS 35 70 105 140 210 280 350 420 V Maximum DC blocking voltage V DC 50 100 150 200 300 400 500 600 V Maximum average f orw ard rectif ied current 9.5mm lead length, @TA =75 IF(AV) 4.0 A IFSM 125.0 A Peak f orw ard surge current 8.3ms single half -sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous f orw ard voltage @ 4.0A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =100 VF 1.28 0.89 10.0 IR 25 50 (Note1) t rr Typical junction capacitance (Note2) CJ 95 Typical thermal resistance (Note3) Rθ JA 20 TJ - 55 ----- + 150 TSTG - 55 ----- + 150 Operating junction temperature range Storage temperature range A 100.0 Maximum reverse recovery time V ns pF /W NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. www.diode.kr Diode Semiconductor Korea MUR405 - - - MUR460 FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 N 1. 10 N 1. trr +0.5A D.U.T. PULSE GENERATOR (NOTE2) (+) 25VDC (approx) (-) 0 -0.25A OSCILLOSCOPE (NOTE 1) 1 NONINDUCTIVE -1.0A 1cm SET TIME BASE FOR 10/20 ns/cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . INSTANTANEOUS REVERSE CURRENT AMPERES FIG.3 -- TYPICAL REVERSE CHARACTERISTIC 100 MUR430-MUR460 40 20 MUR405-MUR420 4.0 2.0 1.0 0.4 TJ =25 Pulse Width=300 µs 0.2 0.1 0 0.4 0.8 1.2 1.6 2.0 2.4 INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.4 -- TYPICAL JUNCTION CAPACITANCE 1000 600 400 200 100 60 40 20 TJ=25 f=1.0MHz 10 0.1 0.2 0.4 1 2 4 10 20 40 REVERSE VOLTAGE, VOLTS 100 80 40 20 TJ=150℃ 8.0 4.0 2.0 0.8 TJ=100℃ 0.4 0.2 0.08 0.04 0.02 0.008 0.004 0.002 0 TJ=25℃ 20 40 60 80 100120 140 160 180 200 PERCENTAGE OF RATED PEAK REVERSE VOLTAGE,% FIG.5--FORWORD DERATING CURVE z AVERAGE FORWARD CURRENT AMPERES AMPERES 10 JUNCTION CAPACITANCE,pF INSTANTANEOUS FORWARD CURRENT FIG.2 -- TYPICAL FORWARD CHARACTERISTIC 4.0 3.5 3.0 2.5 Single Phase Half Wave 60HZ Resistive or Inductive Load 0.375"(9.5mm)Lead length 2.0 1.5 1.0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE, www.diode.kr