MBRB3030CTLG, NRVBB3030CTLG SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a proprietary barrier metal. Features Dual Diode Construction, May be Paralleled for Higher Current Output Guard−Ring for Stress Protection Low Forward Voltage Drop 125C Operating Junction Temperature Maximum Die Size Short Heat Sink Tab Manufactured − Not Sheared! AEC−Q101 Qualified and PPAP Capable NRVBB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements All Packages are Pb−Free* http://onsemi.com SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 30 VOLTS D2PAK CASE 418B PLASTIC Mechanical Characteristics 1 Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 Weight: 1.7 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal 3 Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Device Meets MSL1 Requirements ESD Ratings: Machine Model = C (> 400 V) Human Body Model = 3B (> 8000 V) 4 MARKING DIAGRAM AY WW B3030CTLG AKA A Y WW B3030CTL G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Diode Polarity ORDERING INFORMATION Package Shipping† D2PAK (Pb−Free) 50 Units / Rail NRVBB3030CTLG D2PAK (Pb−Free) 50 Units / Rail NRVBB3030CTLT4G D2PAK (Pb−Free) 800 / Tape & Reel Device MBRB3030CTLG *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 January, 2012 − Rev. 7 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MBRB3030CTL/D MBRB3030CTLG, NRVBB3030CTLG MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 115C) Per Device Symbol Value Unit VRRM VRWM VR 30 V IO 15 30 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 115C) IFRM Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Peak Repetitive Reverse Surge Current (1.0 ms, 1.0 kHz) IRRM 2.0 A Storage Temperature Range Tstg −55 to +150 C TJ −55 to +125 Operating Junction Temperature Range Voltage Rate of Change (Rated VR, TJ = 25C) dV/dt Reverse Energy, Unclamped Inductive Surge (TJ = 25C, L = 3.0 mH) EAS 30 300 10,000 224.5 A A C V/ms mJ Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS (All device data is “Per Leg” except where noted.) Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 50 C/W Thermal Resistance, Junction−to−Case RqJC 1.0 C/W Symbol Value Unit 1. Mounted using minimum recommended pad size on FR−4 board. ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 2) (IF = 15 A, TJ = 25C) (IF = 30 A, TJ = 25C) VF Maximum Instantaneous Reverse Current (Note 2) (Rated VR, TJ = 25C) (Rated VR, TJ = 125C) IR 2. Pulse Test: Pulse Width = 250 ms, Duty Cycle 2.0%. http://onsemi.com 2 0.44 0.51 2.0 195 V mA 1000 1000 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) MBRB3030CTLG, NRVBB3030CTLG 100 TJ = 125C 10 75C 25C 1.0 0.1 0.1 0.3 0.5 0.9 0.7 1.1 TJ = 125C 10 75C 25C 1.0 0.1 0.1 0.3 0.5 0.7 0.9 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.1 1.0E+0 1.0E-1 IR , MAXIMUM REVERSE CURRENT (AMPS) 1.0E+0 IR , REVERSE CURRENT (AMPS) 100 TJ = 125C 1.0E-1 TJ = 125C 1.0E-2 75C 1.0E-2 75C 1.0E-3 1.0E-3 25C 25C 1.0E-4 1.0E-4 1.0E-5 1.0E-5 0 5.0 10 15 20 25 30 0 5.0 10 15 20 25 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current http://onsemi.com 3 30 MBRB3030CTLG, NRVBB3030CTLG dc 20 SQUARE WAVE 15 Ipk/Io = p Ipk/Io = 5.0 10 Ipk/Io = 10 Ipk/Io = 20 5.0 FREQ = 20 kHz 0 0 20 40 60 80 100 120 Ipk/Io = p 8.0 dc SQUARE WAVE 7.0 Ipk/Io = 5.0 6.0 5.0 Ipk/Io = 10 4.0 Ipk/Io = 20 3.0 TJ = 125C 2.0 1.0 0 0 5.0 10 20 15 TC, CASE TEMPERATURE (C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation 25 100 TJ = 25C IPK, PEAK SURGE CURRENT (AMPS) TJ = 25C C, CAPACITANCE (pF) 9.0 140 10,000 1000 100 10 0.1 R T, TRANSIENT THERMAL RESISTANCE (NORMALIZED) 10 PFO , AVERAGE POWER DISSIPATION (WATTS) IO , AVERAGE FORWARD CURRENT (AMPS) 25 1.0 10 100 0.00001 0.0001 0.001 VR, REVERSE VOLTAGE (VOLTS) t, TIME (seconds) Figure 7. Typical Capacitance Figure 8. Typical Unclamped Inductive Surge 0.01 1.0E+00 1.0E-01 Rtjc(t) = Rtjc*r(t) 1.0E-02 0.00001 0.0001 0.001 0.01 t, TIME (seconds) Figure 9. Typical Thermal Response http://onsemi.com 4 0.1 1.0 10 MBRB3030CTLG, NRVBB3030CTLG Modeling Reverse Energy Characteristics of Power Rectifiers ABSTRACT applied to devices used in this switching power circuitry. This technology lends itself to lower reverse breakdown voltages. This combination of high voltage spikes and low reverse breakdown voltage devices can lead to reverse energy destruction of power rectifiers in their applications. This phenomena, however, is not limited to just Schottky technology. In order to meet the challenges of these situations, power semiconductor manufacturers attempt to characterize their devices with respect to reverse energy robustness. The typical reverse energy specification, if provided at all, is usually given as energy−to−failure (mJ) with a particular inductor specified for the UIS test circuit. Sometimes the peak reverse test current is also specified. Practically all reverse energy characterizations are performed using the UIS test circuit shown in Figure 10. Typical UIS voltage and current waveforms are shown in Figure 11. In order to provide the designer with a more extensive characterization than the above mentioned one−point approach, a more comprehensive method for characterizing these devices was developed. A designer can use the given information to determine the appropriateness and safe operating area (SOA) of the selected device. Power semiconductor rectifiers are used in a variety of applications where the reverse energy requirements often vary dramatically based on the operating conditions of the application circuit. A characterization method was devised using the Unclamped Inductive Surge (UIS) test technique. By testing at only a few different operating conditions (i.e. different inductor sizes) a safe operating range can be established for a device. A relationship between peak avalanche current and inductor discharge time was established. Using this relationship and circuit parameters, the part applicability can be determined. This technique offers a power supply designer the total operating conditions for a device as opposed to the present single−data−point approach. INTRODUCTION In today’s modern power supplies, converters and other switching circuitry, large voltage spikes due to parasitic inductance can propagate throughout the circuit, resulting in catastrophic device failures. Concurrent with this, in an effort to provide low−loss power rectifiers, i.e., devices with lower forward voltage drops, Schottky technology is being HIGH SPEED SWITCH CHARGE INDUCTOR DRAIN CURRENT FREE-WHEELING DIODE + V - INDUCTOR CHARGE SWITCH DRAIN VOLTAGE DUT GATE VOLTAGE Figure 10. Simplified UIS Test Circuit http://onsemi.com 5 MBRB3030CTLG, NRVBB3030CTLG Suggested Method of Characterization INDUCTOR CURRENT Example Application The device used for this example was an MBR3035CT, which is a 30 A (15 A per side) forward current, 35 V reverse breakdown voltage rectifier. All parts were tested to destruction at 25C. The inductors used for the characterization were 10, 3.0, 1.0 and 0.3 mH. The data recorded from the testing were peak reverse current (Ip), peak reverse breakdown voltage (BVR), maximum withstand energy, inductance and inductor discharge time (see Table 1). A plot of the Peak Reverse Current versus Time at device destruction, as shown in Figure 12, was generated. The area under the curve is the region of lower reverse energy or lower stress on the device. This area is known as the safe operating area or SOA. DUT REVERSE VOLTAGE TIME (s) 120 Figure 11. Typical Voltage and Current UIS Waveforms 100 80 Utilizing the UIS test circuit in Figure 10, devices are tested to failure using inductors ranging in value from 0.01 to 159 mH. The reverse voltage and current waveforms are acquired to determine the exact energy seen by the device and the inductive current decay time. At least 4 distinct inductors and 5 to 10 devices per inductor are used to generate the characteristic current versus time relationship. This relationship when coupled with the application circuit conditions, defines the SOA of the device uniquely for this application. UIS CHARACTERIZATION CURVE 60 40 20 SAFE OPERATING AREA 0 0 0.0005 0.001 0.0015 0.002 0.0025 0.003 0.0035 0.004 TIME (s) Figure 12. Peak Reverse Current versus Time for DUT http://onsemi.com 6 MBRB3030CTLG, NRVBB3030CTLG ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Table 1. UIS Test Data PART NO. As an example, the values were chosen as L = 200 mH, OV = 12 V and BVR = 35 V. Figure 13 illustrates the example. Note the UIS characterization curve, the parasitic inductor current curve and the safe operating region as indicated. IP (A) BVR (V) ENERGY (mJ) L (mH) TIME (ms) 1 46.6 65.2 998.3 1 715 2 41.7 63.4 870.2 1 657 3 46.0 66.0 1038.9 1 697 4 42.7 64.8 904.2 1 659 5 44.9 64.8 997.3 1 693 6 44.1 64.1 865.0 1 687 7 26.5 63.1 1022.6 3 1261 8 26.4 62.8 1024.9 3 1262 9 24.4 62.2 872.0 3 1178 10 27.6 62.9 1091.0 3 1316 11 27.7 63.2 1102.4 3 1314 12 17.9 62.6 1428.6 10 2851 13 18.9 62.1 1547.4 10 3038 14 18.8 60.7 1521.1 10 3092 TIME (s) 15 19.0 62.6 1566.2 10 3037 16 74.2 69.1 768.4 0.3 322 Figure 13. DUT Peak Reverse and Circuit Parasitic Inductance Current versus Time 17 77.3 69.6 815.4 0.3 333 18 75.2 68.9 791.7 0.3 328 SUMMARY 19 77.3 69.6 842.6 0.3 333 20 73.8 69.1 752.4 0.3 321 21 75.6 69.2 823.2 0.3 328 22 74.7 68.6 747.5 0.3 327 23 78.4 70.3 834.0 0.3 335 24 70.5 66.6 678.4 0.3 317 25 78.3 69.4 817.3 0.3 339 Traditionally, power rectifier users have been supplied with single−data−point reverse−energy characteristics by the supplier’s device data sheet; however, as has been shown here and in previous work, the reverse withstand energy can vary significantly depending on the application. What was done in this work was to create a characterization scheme by which the designer can overlay or map their particular requirements onto the part capability and determine quite accurately if the chosen device is applicable. This characterization technique is very robust due to its statistical approach, and with proper guardbanding (6s) can be used to give worst−case device performance for the entire product line. A “typical” characteristic curve is probably the most applicable for designers allowing them to design in their own margins. The procedure to determine if a rectifier is appropriate, from a reverse energy standpoint, to be used in the application circuit is as follows: a. Obtain “Peak Reverse Current versus Time” curve from data book. b. Determine steady state operating voltage (OV) of circuit. c. Determine parasitic inductance (L) of circuit section of interest. d. Obtain rated breakdown voltage (BVR) of rectifier from data book. e. From the following relationships, V + L @ d i(t) dt I+ 120 Ipeak — TIME RELATIONSHIP DUE TO CIRCUIT PARASITICS 100 80 60 UIS CHARACTERIZATION CURVE 40 20 SAFE OPERATING AREA 0 0 0.0005 0.001 0.0015 0.002 0.0025 0.003 0.0035 0.004 References 1. Borras, R., Aliosi, P., Shumate, D., 1993, “Avalanche Capability of Today’s Power Semiconductors, “Proceedings, European Power Electronic Conference,” 1993, Brighton, England (BVR * OV) @ t L 2. Pshaenich, A., 1985, “Characterizing Overvoltage Transient Suppressors,” Powerconversion International, June/July a “designer” l versus t curve is plotted alongside the device characteristic plot. f. The point where the two curves intersect is the current level where the devices will start to fail. A peak inductor current below this intersection should be chosen for safe operating. http://onsemi.com 7 MBRB3030CTLG, NRVBB3030CTLG PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E −B− V W 4 1 2 A S 3 −T− SEATING PLANE K J G D M T B M N R P U L M W H 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE DIM A B C D E F G H J K L M N P R S V L L M M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 8 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 MBRB3030CTLG, NRVBB3030CTLG ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 9 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MBRB3030CTL/D