AP20P02S/P Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ 2.5V Gate Drive Capability ▼ Fast Switching BVDSS -20V RDS(ON) 52mΩ ID G -18A S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-263 The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP20P02P) are available for low-profile applications. G Absolute Maximum Ratings Symbol Parameter D TO-220 S Rating Units VDS Drain-Source Voltage - 20 V VGS Gate-Source Voltage ± 12 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V -18 A ID@TA=100℃ Continuous Drain Current, VGS @ 10V -14 A -50 A 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 31.25 W Linear Derating Factor 0.25 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Unit Rthj-c Thermal Resistance Junction-case Max. 4.0 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W Data and specifications subject to change without notice 200214031 AP20P02S/P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj RDS(ON) -20 - - V Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.03 - V/℃ Static Drain-Source On-Resistance VGS=-4.5V, ID=-8A - - 52 mΩ VGS=-2.5V, ID=-5A - - 85 mΩ -0.5 - - V VDS=-10V, ID=-8A - 15 - S VDS=-20V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=150 C) VDS=-16V, VGS=0V - - -25 uA Gate-Source Leakage VGS= ± 12 - - ID=-8A - 13.5 - nC VGS(th) Gate Threshold Voltage gfs Forward Transconductance VGS=0V, ID=-250uA VDS=VGS, ID=-250uA o IDSS Drain-Source Leakage Current (Tj=25 C) o IGSS Min. Typ. Max. Units 2 ±100 nA Qg Total Gate Charge Qgs Gate-Source Charge VDS=-16V - 2.1 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 1.6 - nC VDS=-10V - 12 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-8A - 20 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-4.5V - 45 - ns tf Fall Time RD=1.25Ω - 27 - ns Ciss Input Capacitance VGS=0V - 1050 - pF Coss Output Capacitance VDS=-16V - 410 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 110 - pF Source-Drain Diode Symbol IS ISM VSD Parameter Test Conditions VD=VG=0V , VS=-1.2V Continuous Source Current ( Body Diode ) Pulsed Source Current ( Body Diode ) 2 Forward On Voltage Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 1 Tj=25℃, IS=-10A, VGS=0V Min. Typ. Max. Units - - -10 A - - -50 A - - -1.2 V AP20P02S/P 60 45 T C =25 C -4.5V T C =150 o C -4.5V o -4.0V -ID , Drain Current (A) -ID , Drain Current (A) -4.0V 40 -3.5V -3.0V 20 -2.5V -3.5V 30 -3.0V -2.5V 15 VGS= -2.0V VGS= -2.0V 0 0 0 2 4 0 6 2.5 5 7.5 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 160 2 I D = -8A V GS = -4.5V I D = -8A T C =25 ℃ 120 Normalized R DS(ON) RDS(ON) (mΩ ) 1.4 80 0.8 40 0 0.2 0 3 6 9 -V GS (V) Fig 3. On-Resistance v.s. Gate Voltage 12 -50 0 50 100 o T j , Junction Temperature ( C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 150 AP20P02S/P 20 40 16 12 PD (W) -ID , Drain Current (A) 30 20 8 10 4 0 0 25 50 75 100 125 0 150 30 T c , Case Temperature ( o C) 60 90 120 150 T c , Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 Normalized Thermal Response (R thjc) Duty Factor = 0.5 -ID (A) 100us 10 1ms 10ms T C =25 °C Single Pulse 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T Single Pulse Duty Factor = t/T Peak T j = PDM x Rthjc + TC 100ms DC 1 0.01 0.1 1 10 -V DS (V) Fig 7. Maximum Safe Operating Area 100 0.00001 0.0001 0.001 0.01 0.1 t , Pulse Width (s) Fig 8. Effective Transient Thermal Impedance 1 AP20P02S/P f=1.0MHz 10000 8 6 Ciss 1000 Coss C (pF) -VGS , Gate to Source Voltage (V) I D = -8A V DS = -16V 4 Crss 100 2 0 10 0 5 10 15 20 1 7 13 19 -V DS (V) Q G , Total Gate Charge (nC) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 1.2 0.9 -IS(A) T j =150 o C -VGS(th) (V) 10 T j =25 o C 0.6 1 0.3 0 0 0.2 0.5 0.8 1.1 -V SD (V) Fig 11. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 o T j , Junction Temperature ( C) Fig 12. Gate Threshold Voltage v.s. Junction Temperature 150 AP20P02S/P VDS 90% RD VDS D TO THE OSCILLOSCOPE 0.5 x RATED VDS RG G 10% S VGS VGS -4.5 V td(on) Fig 13. Switching Time Circuit td(off) tf tr Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE D 0.8 x RATED VDS G S QG -4.5V QGS QGD VGS -1~-3mA I G ID Charge Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Q