PFS D3SB40 Single-phase silicon bridge rectifier Datasheet

D3SB20...... D3SB80
塑封硅整流桥堆
Single-phase Silicon Bridge Rectifier
反向电压 200---800V
正向电流 4.0 A
Reverse Voltage 200 to 800 V
Forward Current 4.0A
特征 Features
.157
(4.0)
.043(1.1)
.035(0.9)
~
~
·较强的正向浪涌承受能力 High forward surge capability
¢.134(8.4)
.122(3.1)
·浪涌承受能力:170 A Surge overload rating:170 Amperes peak
机械数据 Mechanical Data
-
.146(3.7)
.130(3.3)
.083(2.1)
.069(1.7)
+
.074(1.9)
.059(1.5)
.057(1.45)
.041(1.05)
.602(15.3)
.578(14.7)
.382(9.7)
.366(9.3)
.995(25.3)
.983(24.7)
·封装: 塑料封装 Case: Molded Plastic
.114(2.8)
.098(2.5)
.708(18.0)
.669(17.0)
.134(3.4)
.122(3.1)
·低的反向漏电流 Low reverse leakage
.189(4.8)
.173(4.4)
.150(3.8)
.134(3.4)
·极性: 标记模压或印于本体 Polarity: Symbols molded or marked on body
.031(0.8)
.023(0.6)
·安装位置: 任意
·重量: 4.6 克
.303(7.7) .303(7.7) .303(7.7)
.287(7.3) .287(7.3) .287(7.3)
Mounting Position: Any
Weight:4.6 Grams
Unit:inch(mm)
极限值和温度特性 TA = 25℃ 除非另有规定。
Maximum Ratings & Thermal Characteristics
符号
Symbols
Ratings at 25℃ ambient temperature unless otherwise specified.
D3SB20
D3SB40
D3SB60
D3SB80
单位
Unit
最大可重复峰值反向电压
Maximum repetitive peak reverse voltage
VRRM
200
400
600
800
V
最大均方根电压
Maximum RMS voltage
VRMS
140
280
420
560
V
最大直流阻断电压
Maximum DC blocking voltage
VDC
200
400
600
800
V
加散热片TC =108℃
最大正向平均整流电流
Maximum average forward rectified current 无散热片Ta=25℃
IF(AV)
IF(AV)
4.0
2.3
A
IFSM
120
A
IR(AV)
30
µA
RθJA
6
℃/W
峰值正向浪涌电流 8.3ms单一正弦半波
Peak forward surge current 8.3 ms single half sine-wave
最大反向峰值电流
@TA = 75℃
Maximum peak reverse current full cycle
典型热阻 Typical thermal resistance
工作结温和存储温度
Operating junction and storage temperature range
℃
-50 --- +150
Tj, TSTG
电特性 TA = 25℃ 除非另有规定。
Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified.
符号
Symbols
IF = 2.0A
最大正向电压
Maximum forward voltage
TA= 25℃
最大反向电流
Maximum reverse current
典型结电容 VR = 4.0V, f = 1MHz
Type junction capacitance
D3SB20
D3SB40
D3SB60
D3SB80
单位
Unit
VF
1.05
V
IR
10
µA
Cj
40
pF
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D3SB20...... D3SB80
特性曲线 Characteristic Curves
正向特性曲线(典型值)
正向电流降额曲线
TYPICAL FORWARD CHARACTERISTIC
FORWARD CURRENT DERATING CURVE
4.0
Tl=150℃
1
Tl=25℃
Pulse measurement
per diode
0.1
0
0.2
0.4
0.6
0.8
1
平均正向电流
IF(AV) (A)
IF(A) Average Forward Rectified Current (A)
正向电流 IF(A)
IF Instantaneous Forward Current (A)
10
on glass-epoxi substrate
+
~
-
P.C.B.
soldering land 5mmф
sine wave R-load
free in air
2.0
1.0
00
40
80
120
160
1.2
环境温度 Ta(°C)
Tamb, ambient temperature (°C)
正向电压 VF(V)
VF Instantaneous Forward Voltage (V)
浪涌特性曲线(最大值)
MAXIMUM NON REPETITIVE
PEAK FORWARD SURGE CURRENT
功率损耗曲线
14
FORWARD POWER DISSIPATION
IFSM
200
~
3.0
10mS
12
10mS
100
0
0
2
5
10
20
50
100
通过电流的周期
Number of Cycles at 60 Hz.
FORWARD POWER DISSIPATION PF(W))
non-repetitive
Tj=25℃ before
功率损耗 P(W)
峰值正向浪涌电流 IFSM(A)
IFSM Peak Forward Surge Current (A)
1 Cycle
10
8
6
4
Sine wave
Tj=150℃
2
0
0
1
2
正向电流降额曲线
FORWARD CURRENT DERATING CURVE
平均正向电流
IF(AV) (A)
IF(A) Average Forward Rectified Current (A)
6.0
Tc-sensing point
+
~
~
-
Tc
4.5
sine wave R-load
with heatsink
3.0
1.5
00
40
80
120
3
4
5
6
平均整流电流 I0[A]
AVERAGE RECGIFIED FORWARD
CURRENT Io(A)
160
环境温度 TC(°C)
Case Temperature Tc(℃)
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7
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