INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD50R280CE,IIPD50R280CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤280mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 18.1 A IDM Drain Current-Single Pulsed 42.9 A PD Total Dissipation @TC=25℃ 119 W Tj Max. Operating Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Rth(j-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 1.05 ℃/W 62 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD50R280CE,IIPD50R280CE ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA 500 VGS(th) Gate Threshold Voltage VDS=VGS; ID=350μA 2.5 RDS(on) Drain-Source On-Resistance IGSS TYP MAX UNIT V 3.5 V VGS=13V; ID=4.2A 280 mΩ Gate-Source Leakage Current VGS=20V 0.1 μA IDSS Drain-Source Leakage Current VDS=500V; VGS= 0V 1 μA VSD Diode forward voltage IF=5.2A, VGS = 0V isc website：www.iscsemi.cn 2 0.85 V isc & iscsemi is registered trademark