Vishay BCW60A Small signal transistors (pnp) Datasheet

BCW61 Series
Vishay Semiconductors
New Product
formerly General Semiconductor
Small Signal Transistors (PNP)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
Top View
Mounting Pad Layout
.056 (1.43)
.052 (1.33)
3
1
0.031 (0.8)
Pin Configuration
1. Base 2. Emitter
3. Collector
0.035 (0.9)
.016 (0.4)
0.079 (2.0)
.016 (0.4)
.045 (1.15)
.037 (0.95)
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
max. .004 (0.1)
2
0.037 (0.95)
0.037 (0.95)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Features
• PNP Silicon Epitaxial Planar Transistors
• Suited for low level, low noise, low
frequency applications in hybrid cicuits.
• Low Current, Low Voltage.
• As complementary types, BCW60 Series NPN
transistors are recommended.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking
BCW61A = BA
Code:
BCW61B = BB
BCW61C = BC
BCW61D = BD
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Maximum Ratings & Thermal Characteristics
Parameter
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol
Value
Unit
Collector-Emitter Voltage (VBE = 0)
–VCES
32
V
Collector-Emitter Voltage
–VCEO
32
V
Emitter-Base Voltage
–VEBO
5.0
V
Collector Current (DC)
–I C
100
mA
Peak Collector Current
–ICM
200
mA
Base Current (DC)
–IB
50
mA
Power Dissipation
Ptot
250
mW
Tj
150
°C
Storage Temperature Range
TSTG
–65 to +150
°C
Thermal Resistance, Junction to Ambient Air
RθJA
500(1)
°C/W
Maximum Junction Temperature
Note:
(1) Mounted on FR-4 printed-ciruit board.
Document Number 88171
09-May-02
www.vishay.com
1
BCW61 Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
DC Current Gain
at –VCE = 5 V, –IC =
at –VCE = 5 V, –IC =
at –VCE = 5 V, –IC =
at –VCE = 5 V, –IC =
10
10
10
10
at
at
at
at
–VCE =
–VCE =
–VCE =
–VCE =
5 V,
5 V,
5 V,
5 V,
–IC =
–IC =
–IC =
–IC =
2
2
2
2
at
at
at
at
–VCE =
–VCE =
–VCE =
–VCE =
1 V,
1 V,
1 V,
1 V,
–IC =
–IC =
–IC =
–IC =
50
50
50
50
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol
Min.
TYP.
Max.
Unit
µA
µA
µA
µA
BCW61A
BCW61B
BCW61C
BCW61D
hFE
hFE
hFE
hFE
–
30
40
100
–
–
–
–
–
–
–
–
–
–
–
–
mA
mA
mA
mA
BCW61A
BCW61B
BCW61C
BCW61D
hFE
hFE
hFE
hFE
120
180
250
380
–
–
–
–
220
310
460
630
–
–
–
–
BCW61A
BCW61B
BCW61C
BCW61D
hFE
hFE
hFE
hFE
60
80
100
110
–
–
–
–
–
–
–
–
–
–
–
–
Collector-Emitter Saturation Voltage
at –IC = 10 mA, –IB = 0.25 mA
at –IC = 50 mA, –IB = 1.25 mA
–VCEsat
–VCEsat
60
120
–
–
250
550
mV
mV
Base-Emitter Saturation Voltage
at –IC = 10 mA, –IB = 0.25 mA
at –IC = 50 mA, –IB = 1.25 mA
–VBEsat
–VBEsat
600
680
–
–
850
1050
mV
mV
–VBE
–VBE
–VBE
600
–
–
650
550
720
750
–
–
mV
mV
mV
Collector-Emiter Cut-off Current
at –VCE = 32 V, VEB=0
at –VCE = 32 V, VEB=0, TA = 150°C
–ICES
–
–
–
–
20
20
nA
µA
Emitter-Base Cut-off Current
at –VEB = 4 V, IC=0
–IEBO
–
–
20
nA
fT
100
–
–
MHz
Collector-Base Capacitance
at –VCB = 10 V, f = 1 MHZ, IE=0
CCBO
–
4.5
–
pF
Emitter-Base Capacitance
at –VEB = 0.5 V, f = 1 MHZ, IC=0
CEBO
–
11
–
pF
F
–
2
6
dB
hfe
–
–
–
–
200
260
330
520
Turn-on Time at RL = 990Ω (see fig. 1)
– VCC = 10V, –Ic = 10mA, –IB(on) = IB(off) = 1mA
ton
–
85
150
ns
Turn-off Time at RL = 990Ω (see fig. 1)
– VCC = 10V, –Ic = 10mA, –IB(on) = IB(off) = 1mA
toff
–
480
800
ns
mA
mA
mA
mA
Base-Emitter Voltage
at –VCE = 5 V, –IC = 2 mA
at –VCE = 5 V, –IC = 10 µA
at –VCE = 1 V, –IC = 50 mA
Gain-Bandwidth Product
at –VCE = 5 V, –IC = 10 mA, f = 100 MHz
Noise Figure
at –VCE = 5 V, –IC = 200 µA, RS = 2 kΩ, f = 100 kHZ, B = 200Hz
Small Signal Current Gain
at –VCE = 5V, –IC = 2 mA, f = 1.0 kHZ
www.vishay.com
2
BCW60A
BCW60B
BCW60C
BCW60D
Document Number 88171
09-May-02
BCW61 Series
Vishay Semiconductors
formerly General Semiconductor
Fig. 1 - Switching Waveforms
10%
90%
INPUT
t on
t off
10%
OUTPUT
90%
90%
10%
td t
r
Document Number 88171
09-May-02
ts
tf
www.vishay.com
3
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