Data Sheet No. PD 96937A IRIS-A6359 Features INTEGRATED SWITCHER • Oscillator is provided on the monolithic control IC with adopting On-ChipTrimming technology. Package Outline • Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part. • Low start-up circuit current (50uA max) • Built-in Active Low-Pass Filter for stabilizing the operation in case of light load • Avalanche energy guaranteed MOSFET with high VDSS • The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. • No VDSS de-rating is required. 8 Lead PDIP • Built-in constant voltage drive circuit • Various kinds of protection functions Key Specifications • Pulse-by-pulse Overcurrent Protection (OCP) • Overvoltage Protection with latch mode (OVP) Type MOSFET VDSS(V) RDS(ON) MAX IRIS-A6359 650 6.00Ω • Thermal Shutdown with latch mode (TSD) AC input(V) Pout(W) Note 1 230±15% 7 85 to 264 5 Note 1: The Pout(W) represents the thermal rating at PRC Operation, and the peak power output is obtained by approximately 120 to 150% of the above listed. When the output voltage is low and ON-duty is narrow, the Pout(W) shall become lower than that of above. Descriptions IRIS-A6359 is a hybrid IC consists from power MOSFET and a controller IC, designed for PRC fly-back converter type SMPS (Switching Mode Power Supply) applications, applicable for PRC operation for small power SMPS. This IC realizes downsizing and standardizing of a power supply system reducing external components count and simplifying the circuit designs. (Note). PRC is abbreviation of “Pulse Ratio Control” (On-width control with fixed OFF-time). Typical Connection Diagram IRIS-A6359 1 8 2 7 3 6 4 5 www.irf.com IRIS-A6359 Absolute Maximum Ratings (Ta=25ºC) Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol IDpeak Definition Drain Current *1 IDMAX Maximum switching current *5 EAS Vin Vth P D1 P D2 TF Top Tstg Tch Single pulse avalanche energy *2 Input voltage for control part O.C.P/F.B Pin voltage Power dissipation for MOSFET *3 Power dissipation for control part (Control IC) *4 Internal frame temperature in operation Operating ambient temperature Storage temperature Channel temperature Terminals Max. Ratings 8 1.8 Units A 8 1.8 A 8-1 3-2 4-2 8-1 24 35 6 1.35 mJ V V W 3-2 0.14 W - -20 ~ +125 -20 ~ +125 -40 ~ +125 150 ℃ ℃ ℃ ℃ Note Single Pulse V1-2=0.82V Ta=-20~+125℃ Single Pulse VDD=99V,L=20mH IL=1.8A *6 Specified by Vin×Iin Refer to recommended operating temperature *1 Refer to MOS FET A.S.O curve *2 MOS FET Tch-EAS curve *3 Refer to MOS FET Ta-PD1 curve Fig.1 V1-2 *4 Refer to TF-PD2 curve for Control IC (See page 5) *5 Maximum switching current. The maximum switching current is the Drain current determined by the drive voltage of the IC and threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 1and Pin 2 due to patterning, the maximum switching current decreases as shown by V1-2 in Fig.1 Accordingly please use this device within the decrease value, referring to the derating curve of the maximum switching current. *6 When embedding this hybrid IC onto the printed circuit board (board size 15mm×15mm) www.irf.com IRIS-A6359 Electrical Characteristics (for Control IC) Electrical characteristics for control part (Ta=25℃, Vin=20V,unless otherwise specified) Symbol Vin(ON) Vin(OFF) Iin(ON) Iin(OFF) TOFF(MAX) Vth IOCP/FB Vin(OVP) Ratings TYP 17.6 10.1 15 0.76 0.8 25.5 MIN 15.8 9.1 12 0.7 0.7 23.2 Definition Operation start voltage Operation stop voltage *7 Circuit current in operation Circuit current in non-operation Maximum OFF time O.C.P/F.B Pin threshold voltage O.C.P/F.B Pin extraction current O.V.P operation voltage Units V V mA µA µsec V mA V MAX 19.4 11.1 5 50 18 0.82 0.9 27.8 Test Conditions Vin=0→19.4V Vin=19.4→9.1V Vin=15V Vin=0→27.8V Vin=27.8→ Iin(H) Latch circuit sustaining current *8 Vin(La.OFF) Latch circuit release voltage *7,8 Tj(TSD) Thermal shutdown operating temperature 7.9 135 - 70 10.5 - µA V ℃ (Vin(OFF)-0.3)V Vin=27.8→7.9V - *7 The relation of Vin(OFF)＞Vin(La.OFF) is applied for each product. *8 The latch circuit means a circuit operated O.V.P and T.S.D. Electrical Characteristics (for MOSFET) (Ta=25℃) unless otherwise specified Symbol Definition MIN Ratings TYP MAX Units Test Conditions 650 - - V V2- 1=0V(short) - - 300 µA V2- 1=0V(short) - - 6 250 Ω nsec ID=300µA VDSS Drain-to-Source breakdown voltage IDSS Drain leakage current VDS =650V V3- 2 =10V RDS(ON) On-resistance tf Switching time ID=0.4A Between channel and θch-F Thermal resistance *9 - - 52 ℃/W internal frame *9 Internal frame temperature (TF) is measured at the root of the Pin 5. www.irf.com IRIS-A6359 IRIS-A6359 MOSFET A.S.O Curve Ta=25ºC Single Pulse IRIS-A6359 A.S.O. temperature derating coefficient curve 100 A.S.O. temperature derating coefficient[%] 100 80 Drain Current ID[A] 10 60 40 Drain current limit by ON resistance 1ms 1 ASO temperature derating shall be made by obtaining ASO Coefficient from the left curve in your use. 0.1 20 0.1ms 0 0 20 40 60 80 100 0.01 120 1 Internal frame temperature TF [℃] IRIS-A6359 100 1000 IRIS-A6359 Avalanche energy derating curve Maximum Switching current derating curve Ta=‐20～+125℃ 100 EAS temperature derating coefficient [%] 2 Maximum Switchng Current IDMAX[A] 10 Drain-to-Source Voltage VDS [V] 1 0 80 60 40 20 0 0.8 0.9 1 V1-2 [V] 1.1 1.2 25 50 75 Channel temperature Tch [ 100 125 150 ℃] www.irf.com IRIS-A6359 IRIS-A6359 TF-PD2 Curve for Control IC IRIS-A6359 MOSFET Ta-PD1 Curve 0.16 1.6 PD2=0.14[W] 1.2 0.12 Power dissipation PD2[W] 1.4 0.14 1 0.8 0.6 0.1 0.08 0.06 0.4 0.04 0.2 0.02 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta[℃] 20 40 60 80 100 120 140 Internal frame temperature TF[℃] IRIS-A6359 Transient thermal resistance curve 10 Transient thermal resistance θch-a[℃/W] Power dissipation PD1[W] PD1=1.35[W] 1 0.1 0.01 1µ 10µ 100µ 1m 10m 100m time t [sec] www.irf.com IRIS-A6359 Block Diagram 3 Vin OVP UVLO ＋ ＋ － REG － Latch Delay TSD Internal Bias ＋ － REG PWM OSC 7,8 D Latch Drive S Q R 1 S OCP Comp. 4 ＋ － Icont OCP/FB 2,5 GND Lead Assignments Pin No. Pin Assignment (Top View) Source 1 8 Drain GND 2 7 Drain Vin 3 6 N.C. OCP/FB 4 5 GND 1 2 3 Symbol S GND Vin 4 5 6 7,8 OCP/FB GND N.C. D Description Source Pin Ground Pin Power supply Pin Overcurrent / Feedback Pin Ground Pin Drain Pin Function MOSFET source Ground Input of power supply for control circuit Input of overcurrent detection signal / constant voltage control signal Ground Not Connected MOSFET drain Other Functions O.V.P. – Overvoltage Protection Circuit T.S.D. – Thermal Shutdown Circuit www.irf.com IRIS-A6359 Case Outline 8 7 6 5 A6359 1 2 a b c IR 3 4 a. Type Number b. Lot Number 1st letter：The last digit of year 2nd letter：Month (1 to 9 for Jan. to Sept., O for Oct. N for Nov. D for Dec.) 3rd letter：Week 1～3 : Arabic numerals c. Registration Number Material of Pin : Cu Treatment of Pin : Solder plating Weight: Approx. 0.51g Data and specifications subject to change without notice. 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