Fairchild H11AV2-M Phototransistor optocoupler Datasheet

PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
PACKAGE OUTLINE
H11AV2A-M
SCHEMATIC
1
6
2
5
6
6
3
1
NC
4
H11AV1S-M, H11AV2S-M
1
H11AV1-M, H11AV2-M
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
6
1
H11AV1A-M, H11AV2A-M
DESCRIPTION
The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin
dual in-line white package.
FEATURES
• H11AV1 and H11AV2 feature 0.3" input-output lead spacing
• H11AV1A and H11AV2A feature 0.4" input-output lead spacing
• UL recognized (File #E90700, Vol. 2)
• VDE recognized (File #102497)
- Add option V (e.g., H11AV1AV-M)
APPLICATIONS
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
© 2003 Fairchild Semiconductor Corporation
Page 1 of 10
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PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Value
Units
Storage Temperature
TSTG
-40 to +150
°C
Operating Temperature
TOPR
-40 to +100
°C
Wave solder temperature (see page 9 for reflow solder profiles)
TSOL
260 for 10 sec
°C
250
mW
2.94
mW/°C
60
mA
TOTAL DEVICE
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
PD
EMITTER
DC/Average Forward Input Current
IF
Reverse Input Voltage
VR
LED Power Dissipation @ TA = 25°C
Derate above 25°C
PD
6
V
120
mW
1.41
mW/°C
DETECTOR
Collector-Emitter Voltage
VCEO
70
V
Collector-Base Voltage
VCBO
70
V
Emitter-Collector Voltage
VECO
7
V
150
mW
1.76
mW/°C
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
© 2003 Fairchild Semiconductor Corporation
PD
Page 2 of 10
6/30/03
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions
Symbol
Min
Typ*
Max
0.8
1.18
1.5
0.9
1.28
1.7
0.7
1.05
1.4
Unit
EMITTER
Input Forward Voltage (IF = 10 mA)
TA = 25°C
TA = -55°C
VF
TA = 100°C
(VR = 6.0 V)
Reverse Leakage Current
IR
10
V
µA
DETECTOR
Collector-Emitter Breakdown Voltage
(IC = 1.0 mA, IF = 0)
BVCEO
70
100
V
Collector-Base Breakdown Voltage
(IC = 100 µA, IF = 0)
BVCBO
70
120
V
Emitter-Collector Breakdown Voltage
(IE = 100 µA, IF = 0)
BVECO
7
10
V
(VCE = 10 V, IF = 0)
ICEO
1
(VCB = 10 V)
ICBO
0.5
nA
(VCE = 0 V, f = 1 MHz)
CCE
8
pF
Collector-Emitter Dark Current
Collector-Base Dark Current
Capacitance
50
nA
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Test Conditions Symbol
Min
Typ*
Max
Units
(f = 60 Hz, t = 1 sec)
VISO
7500
Vac(pk)
(VI-O = 500 VDC)
RISO
1011
Ω
(VI-O = 0 V, f = 1 MHz)
CISO
0.2
2
pF
Note
* Typical values at TA = 25°C
© 2003 Fairchild Semiconductor Corporation
Page 3 of 10
6/30/03
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
DC Characteristic
Test Conditions
Symbol
Device
Min
H11AV1
H11AV1A
100
H11AV2
H11AV2A
50
Typ*
Max
Unit
300
%
Current Transfer Ratio,
Collector to Emitter
(IF = 10 mA, VCE = 10 V)
Collector-Emitter
Saturation Voltage
(IC = 2 mA, IF = 20 mA)
VCE (SAT)
All
0.4
V
Non-Saturated
Turn-on Time
(IC = 2 mA, VCC = 10 V, RL = 100Ω)
(Fig. 11)
TON
All
15
µs
Non Saturated
Turn-off Time
(IC = 2 mA, VCC = 10 V, RL = 100Ω)
(Fig. 11)
TON
All
15
µs
CTR
AC Characteristic
* Typical values at TA = 25°C
© 2003 Fairchild Semiconductor Corporation
Page 4 of 10
6/30/03
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
TYPICAL PERFORMANCE CURVES
Fig. 1 LED Forward Voltage vs. Forward Current
Fig. 2 Normalized CTR vs. Forward Current
1.6
1.7
1.4
1.6
1.2
NORMALIZED CTR
VF - FORWARD VOLTAGE (V)
1.8
1.5
1.4
TA = -55°C
1.3
TA = 25°C
VCE = 5.0V
TA = 25°C
Normalized to
IF = 10 mA
1.0
0.8
0.6
0.4
1.2
TA = 100°C
1.1
0.2
1.0
0.0
1
10
0
100
2
4
6
IF - LED FORWARD CURRENT (mA)
10
12
14
16
18
20
Fig. 4 CTR vs. RBE (Unsaturated)
Fig. 3 Normalized CTR vs. Ambient Temperature
1.0
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
1.4
1.2
IF = 5 mA
NORMALIZED CTR
8
IF - FORWARD CURRENT (mA)
1.0
IF = 10 mA
0.8
IF = 20 mA
0.6
Normalized to
IF = 10 mA
TA = 25°C
0.4
0.9
IF = 20 mA
0.8
IF = 10 mA
0.7
IF = 5 mA
0.6
0.5
0.4
0.3
0.2
VCE= 5.0 V
0.1
0.0
0.2
-60
-40
-20
0
20
40
60
80
10
100
100
1000
RBE- BASE RESISTANCE (kΩ)
TA - AMBIENT TEMPERATURE (°C)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
0.9
VCE= 0.3 V
0.8
IF = 20 mA
0.7
0.6
IF = 10 mA
0.5
0.4
0.3
IF = 5 mA
0.2
0.1
0.0
10
100
RBE- BASE RESISTANCE (k Ω)
1000
VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V)
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current
Fig. 5 CTR vs. RBE (Saturated)
1.0
100
TA = 25˚C
10
1
IF = 2.5 mA
0.1
IF = 20 mA
0.01
IF = 5 mA
0.001
0.01
IF = 10 mA
0.1
1
10
IC - COLLECTOR CURRENT (mA)
© 2003 Fairchild Semiconductor Corporation
Page 5 of 10
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PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
Fig. 7 Switching Speed vs. Load Resistor
Fig. 8 Normalized ton vs. RBE
1000
5.0
NORMALIZED ton - (ton(RBE) / ton(open))
IF = 10 mA
VCC = 10 V
TA = 25°C
SWITCHING SPEED - (µs)
H11AV2A-M
100
Toff
10
Tf
Ton
1
Tr
0.1
4.5
VCC = 10 V
IC = 2 mA
RL = 100 Ω
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.1
1
10
10
100
100
1000
10000
100000
RBE- BASE RESISTANCE (k Ω)
R-LOAD RESISTOR (kΩ)
Fig. 10 Dark Current vs. Ambient Temperature
10000
Fig. 9 Normalized toff vs. RBE
NORMALIZED toff - (toff(RBE) / toff(open))
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VCC = 10 V
IC = 2 mA
RL = 100 Ω
0.5
0.4
VCE = 10 V
TA = 25°C
ICEO - COLLECTOR -EMITTER DARK CURRENT (nA)
1.4
0.3
0.2
0.1
1000
100
10
1
0.1
0.01
0.001
10
100
1000
10000
100000
0
20
40
60
80
100
RBE- BASE RESISTANCE (k Ω)
TA - AMBIENT TEMPERATURE (°C)
TEST CIRCUIT
WAVE FORMS
VCC = 10V
INPUT PULSE
IC
IF
INPUT
RL
10%
OUTPUT
OUTPUT PULSE
90%
RBE
tr
ton
tf
toff
Adjust IF to produce IC = 2 mA
Figure 11. Switching Time Test Circuit and Waveforms
© 2003 Fairchild Semiconductor Corporation
Page 6 of 10
6/30/03
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
Package Dimensions (Through Hole)
H11AV2A-M
Package Dimensions (Surface Mount)
0.350 (8.89)
0.320 (8.13)
0.350 (8.89)
0.320 (8.13)
PIN 1 ID
Pin 1 ID
0.260 (6.60)
0.240 (6.10)
0.070 (1.77)
0.040 (1.02)
0.390 (9.90)
0.332 (8.43)
0.070 (1.77)
0.040 (1.02)
SEATING PLANE
SEATING PLANE
0.260 (6.60)
0.240 (6.10)
0.320 (8.13)
0.014 (0.36)
0.010 (0.25)
0.200 (5.08)
0.115 (2.93)
0.320 (8.13)
0.014 (0.36)
0.010 (0.25)
0.200 (5.08)
0.115 (2.93)
0.012 (0.30)
0.008 (0.20)
0.025 (0.63)
0.020 (0.51)
0.100 (2.54)
0.015 (0.38)
0.020 (0.50)
0.016 (0.41)
0.100 (2.54)
0.100 [2.54]
0.035 (0.88)
0.006 (0.16)
0.020 (0.50)
0.016 (0.41)
15°
0.012 (0.30)
Package Dimensions (0.4” Lead Spacing)
Recommended Pad Layout for
Surface Mount Leadform
0.350 (8.89)
0.320 (8.13)
PIN 1 ID
0.070 (1.78)
0.260 (6.60)
0.240 (6.10)
0.060 (1.52)
SEATING PLANE
0.070 (1.77)
0.040 (1.02)
0.014 (0.36)
0.010 (0.25)
0.425 (10.79)
0.100 (2.54)
0.305 (7.75)
0.030 (0.76)
0.200 (5.08)
0.115 (2.93)
0.100 (2.54)
0.015 (0.38)
0.020 (0.50)
0.016 (0.41)
0.100 [2.54]
0.012 (0.30)
0.008 (0.21)
0.425 (10.80)
0.400 (10.16)
NOTE
All dimensions are in inches (millimeters)
© 2003 Fairchild Semiconductor Corporation
Page 7 of 10
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PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
ORDERING INFORMATION
Order Entry Identifier
Order Entry Identifier
Option
S
Example
Surface Mount Lead Bend
H11AV1S-M
SR2
Surface Mount; Tape and reel
N/A
0.4" Lead Spacing
V
H11AV1SR2-M
H11AV1A-M
VDE 0884
H11AV1V-M
N/A
VDE 0884, 0.4" Lead Spacing
H11AV1AV-M
SV
VDE 0884, Surface Mount
H11AV1SV-M
SR2V
VDE 0884, Surface Mount, Tape & Reel
H11AV1SR2V-M
MARKING INFORMATION
1
V
3
H11AV1
2
X YY Q
6
4
5
White Package
Definitions
1
Fairchild logo
2
Device number
3
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4
One digit year code
• One digit for white package parts, e.g., ‘3’
5
Two digit work week ranging from ‘01’ to ‘53’
6
Assembly package code
*Note – Parts built in the white package (M suffix) that do not have the ‘V’ option (see
definition 3 above) that are marked with date code ‘325’ or earlier are marked in the
portrait format.
© 2003 Fairchild Semiconductor Corporation
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PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
Carrier Tape Specifications
12.0 ± 0.1
4.5 ± 0.20
2.0 ± 0.05
4.0 ± 0.1
0.30 ± 0.05
Ø1.5 MIN
1.75 ± 0.10
11.5 ± 1.0
21.0 ± 0.1
9.1 ± 0.20
10.1 ± 0.20
0.1 MAX
24.0 ± 0.3
Ø1.5 ± 0.1/-0
User Direction of Feed
Reflow Profile
Temperature (°C)
300
230°C, 10–30 s
250
245°C peak
200
150
Time above 183°C, 120–180 sec
100
Ramp up = 2–10°C/sec
50
• Peak reflow temperature: 245°C (package surface temperature)
• Time of temperature higher than 183°C for 120–180 seconds
• One time soldering reflow is recommended
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Time (Minute)
© 2003 Fairchild Semiconductor Corporation
Page 9 of 10
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PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
© 2003 Fairchild Semiconductor Corporation
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
Page 10 of 10
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