GTM G421SD Surface mount, schottky barrier diode voltage 40v, current 0.1a Datasheet

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G421SD
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
V O LT A G E 4 0 V, C U R R E N T 0 . 1 A
Description
The G421SD is designed for low power rectification.
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
0
10
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+125
Storage Temperature
Tstg
-40 ~ +125
Maximum Recurrent Peak Reverse Voltage
VRRM
40
V
Maximum RMS Voltage
VRPS
28
V
Maximum DC Blocking Voltage
VDC
40
V
Peak Forward Surge Current at 8.3mSec single half sine-wave
IFSM
1.0
A
Typical Junction Capacitance between Terminal
CJ
6.0
pF
Maximum Average Forward Rectified Current
Io
0.1
A
Total Power Dissipation
PD
225
mW
Characteristics
at Ta = 25
Characteristics
Symbol
Typ.
Unit
Test Condition
Maximum Instantaneous Forward Voltage
VF(1)
0.55
V
IF(1) = 100mA
Maximum Instantaneous Forward Voltage
VF(2)
0.34
V
IF(2) = 10mA
IR
30
uA
VR = 10V
Maximum Average Reverse Current
2/2
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4
FAX : 86-21-38950165
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