CHENMKO ENTERPRISE CO.,LTD CHEMG4PT SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SOT553 * Small surface mounting type. (SOT-553) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Both the CHDTC114T in one package. Built in bias resistor(R1=10kΩ, Typ. ) (4) (3) 0.50 0.9~1.1 0.50 0.15~0.3 (5) MARKING 1.5~1.7 (1) 1.1~1.3 * G4 0.5~0.6 0.19~0.18 1.5~1.7 CIRCUIT 3 2 R1 1 R1 4 5 SOT553 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VCC Supply voltage VIN Input voltage CONDITIONS MIN. − IO DC Output current IC(Max.) Tamb ≤ 25 OC, Note 1 MAX. UNIT 50 V -5 V − 100 − 100 − 200 mW O C mA PTOT Total power dissipation TSTG Storage temperature −55 +150 TJ Junction temperature − 150 O C Thermal resistance − 625 O C/W RθJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. junction - Ambient Air 2004-07 RATING CHARACTERISTIC ( CHEMG4PT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT 50 − − V 50 − − V IE=50uA 5.0 − − V Collector cutoff current VCB=50V − − 0.5 uA Emitter cutoff current VEB=4V − − 0.5 uA VCE(sat) Collector-emitter saturation voltage IC/IB=1mA/0.1mA − − 0.3 V hFE DC current gain IC=1mA; VCE=5.0V 100 250 600 R1 fT Input resistor Transition frequency 7.0 − 10.0 250 13.0 − BVCBO Collector-base breakdown voltage BVCEO Collector-emitter breakdown voltage IC=1.0mA BVEBO Emitter-base breakdown voltage ICBO IEBO Note 1.Pulse test: tp≤300uS; δ≤0.02. IC=50uA IE=-5mA, VCE=10.0V f=100MHz KΩ MHz RATING CHARACTERISTIC CURVES ( CHEMG4PT ) Typical Electrical Characteristics Fig.1 Input voltage vs. output current (ON characteristics) Ta =- 25OC O 25 = C 75OC 1 100m 100m VO=0.2V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 10 Fig.2 Output current vs. input voltage (OFF characteristics) 0 10m 20m 30m 40m Ta= 75OC 25OC -25 OC 10m 1m 100u 10u 1u 50m VCC=5V 0 Fig.3 DC current gain vs. output current 100 Ta= 75 OC 25OC -25OC 10m OUTPUT CURRENT : IO (A) 3 4 5 6 1 VO =10V 10 10 1m 2 7 8 9 10 Fig.4 Output voltage vs. output current OUTPUT VOLTAGE : VO(on) (V) DC CURRENT GAIN : GI 1k 1 INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A) 100m 100m lO/lI=10 Ta= 75 OC 25OC -25 OC 10m 1m 0 10m 20m 30m 40m OUTPUT CURRENT : IO (A) 50m