IXYS IXSH25N120A Igbt Datasheet

IGBT
IXSH25N120A IC25
=
50 A
VCES = 1200 V
VCE(sat) = 4.0 V
Improved SCSOA Capability
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
1200
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MW
1200
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
50
A
IC90
ICM
TC = 90°C
TC = 25°C, 1 ms
25
80
A
A
ICM = 50
@ 0.8 VCES
A
10
µs
200
W
G
SSOA
VGE = 15 V, TJ = 125°C, RG = 33 W
(RBSOA)Clamped inductive load, L = 100 µH
tsc
TJ = 125ºC, VCE = 720 V; VGE = 15V, RG = 33W
PC
TC = 25°C
TJ
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.15/10
Nm/lb-in.
TJM
TSTG
Md
TO-247AD
Mounting torque
Weight
6
Max. Lead Temperature for
Soldering (1.6mm from case for 10s)
g
300
°C
C
E
Features
• Second generation HDMOSTM process
Low VCE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
Applications
Symbol
Test Conditions
BVCES
IC
= 3 mA, VGE = 0 V
VGE(th)
IC
= 2.5 mA, VCE = VGE
ICES
Characteristic Values
(T J = 25°C unless otherwise specified)
Min. Typ. Max.
1200
4
V
8
V
•
•
•
•
AC motor speed control
DC servo and robot drives
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
• DC choppers
VCE = 0.8 VCES , VGE= 0 V
TJ = 25°C
200
mA
Note 2
TJ = 125°C
1
mA
Advantages
+ 100
nA
4.0
V
• Easy to mount (isolated mounting
hole)
• Reduces assembly time and cost
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC = IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
95593A (7/00)
1-2
IXSH 25N120A
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
gfs
IC = IC90, VCE = 10 V,
Pulse test, t < 300 µs, duty cycle < 2 %
IC(on)
VGE = 15V, VCE = 10 V
C ies
VCE = 25 V, VGE = 0 V, f = 1 MHz
Coes
C res
Qg
Qge
IC = Ic90, VGE = 15 V, VCE = 0.5 VCES
Qgc
10
17
S
140
A
2850
pF
210
50
pF
pF
120
30
nC
nC
50
nC
td(on)
Inductive load, TJ = 25°C
100
ns
t ri
td(off)
IC = IC90, VGE = 15 V, L = 100µH
RG = 18 W, VCLAMP = 0.8 VCES
200
450
ns
ns
tfi
Eoff
Note 1
650
9.6
ns
mJ
td(on)
t ri
Inductive load, TJ = 125°C
100
200
ns
ns
1.8
mJ
E(on)
IC= IC90, VGE = 15 V, L = 100µH
RG = 18 W
TO-247 AD (IXSH) Outline
Dim. Millimeter
Min. Max.
Inches
Min. Max.
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
G
H
1.65 2.13
4.5
0.065 0.084
0.177
ns
J
K
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
td(off)
VCLAMP = 0.8 VCES
450
tfi
Note 1
900
ns
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
17
mJ
N
1.5 2.49
0.087 0.102
0.25
0.63 K/W
K/W
Eoff
RthJC
RthCK
Notes:
1) Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or Rg values.
2) Device must be heatsunk for high temperature measurements to avoid thermal runaway.
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-2
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