JIEJIE ACJT1235-10A 12a triac Datasheet

JIEJIE MICROELECTRONICS CO. , Ltd
ACJT12 Series
12A TRIACs
Rev.3.0
DESCRIPTION:
The ACJT12 series of double mesa technology provide high
interference immunity, They can be used as an static ON/OFF
function in electrical control system, and used as a driver of
low power and high inductance or resistive loads, such as
jet pumps of dishwashers, fans of air-conditioner ...
ACJT12xx-xxA provides insulation voltage rated at 2500V
RMS and ACJT12xx-xxF provides insulation voltage rated at
2000V RMS from all three terminals to external heatsink.
1 2
3
1 2
MAIN FEATURES
Symbol
Value
Unit
IT(RMS)
12
A
VDRM /VRRM
1000
V
IGT
≤10 or ≤35 or ≤50
mA
1 2
3
TO-220A
Insulated
3
TO-220B
Non-Insulated
TO-220F
Insulated
T1(1)
T2(2)
G(3)
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Tstg
-40-150
℃
Tj
-40-125
℃
Repetitive peak off-state voltage( Tj=25℃)
VDRM
1000
V
Repetitive peak reverse voltage( Tj=25℃)
VRRM
1000
V
Non repetitive surge peak Off-state voltage
VDSM
VDRM +100
V
Non repetitive peak reverse voltage
VRSM
VRRM +100
V
IT(RMS)
12
A
ITSM
120
A
I2t
72
A2s
dIT/dt
50
A/μs
Storage junction temperature range
Operating junction temperature range
TO-220A(Ins)/
TO-220F(Ins) (TC=92℃)
RMS on-state
current
TO-220B(Non-Ins)
(TC=103℃)
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I2t value for fusing ( tp=10ms)
Rate of rise of on-state current (IG=2×IGT)
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ACJT12 Series
JieJie Microelectronics CO. , Ltd
Peak gate current
Average gate power dissipation
Peak gate power
IGM
4
A
PG(AV)
1
W
PGM
5
W
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Value
Symbol
IGT
VGT
VGD
Test Condition
Quadrant
VD=12V RL=33Ω
VD=VDRM Tj=125℃
RL=3.3KΩ
Unit
ACJT1210
ACJT1235
ACJT1250
10
35
50
Ⅰ-Ⅱ-Ⅲ
MAX
Ⅰ-Ⅱ-Ⅲ
MAX
1.5
V
Ⅰ-Ⅱ-Ⅲ
MIN
0.2
V
Ⅰ-Ⅲ
IL
IG=1.2IGT
IH
IT=100mA
VD=2/3VDRM Gate Open
Tj=125℃
dV/dt
20
50
70
30
70
100
MAX
15
45
60
mA
MIN
1000
1500
2000
V/μs
mA
MAX
Ⅱ
mA
STATIC CHARACTERISTICS
Symbol
VTM
IDRM
IRRM
Parameter
ITM=17A tp=380μs
VD=VDRM VR=VRRM
Value(MAX)
Unit
Tj=25℃
1.65
V
Tj=25℃
10
μA
Tj=125℃
3.0
mA
Value
Unit
THERMAL RESISTANCES
Symbol
Rth(j-c)
Parameter
junction to case(AC)
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TO-220A(Ins)/
TO-220F(Ins)
4.0
TO-220B(Non-Ins)
2.8
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℃/W
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ACJT12 Series
JieJie Microelectronics CO. , Ltd
ORDERING INFORMATION
AC
J
T
12
35
-10
F
A:TO-220A(Ins)
F:TO-220F(Ins)
B:TO-220B(Non-Ins)
AC switch
JieJie Microelectronics Co.,Ltd
10:VDRM /VRRM≥1000V
10: IGT1-3≤10mA
35: IGT1-3≤35mA
50: IGT1-3≤50mA
Triacs
IT(RMS):12A
PACKAGE MECHANICAL DATA
Dimensions
Ref.
m
3
ax
E
Min.
A
M
C2
H
D
V1
L3
F
Φ
m
.8
C3
L1
Millimeters
L2
TO-220A Ins
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Typ.
Max.
4.60
0.173
0.181
B
0.61
0.88
0.024
0.035
C
0.46
0.70
0.018
0.028
C2
1.21
1.32
0.048
0.052
C3
2.40
2.72
0.094
0.107
D
8.60
9.70
0.339
0.382
E
9.80
10.4
0.386
0.409
F
6.55
6.95
0.258
0.274
2.54
28.0
0.1
29.8
1.102
3.75
L1
C
Min.
4.40
H
G
Max.
A
G
B
Typ.
Inches
1.173
0.148
L2
1.14
1.70
0.045
0.067
L3
2.65
2.95
0.104
0.116
V1
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45°
45°
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ACJT12 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
Dimensions
Ref.
x
E
Min.
A
C2
H
D
V1
L3
F
Φ
Ma
mm
8
.
3
Millimeters
JIE
L1
C3
L2
Max.
0.173
0.181
B
0.61
0.88
0.024
0.035
C
0.46
0.70
0.018
0.028
C2
1.21
1.32
0.048
0.052
C3
2.40
2.72
0.094
0.107
D
8.60
9.70
0.339
0.382
E
9.60
10.4
0.378
0.409
F
6.20
6.60
0.244
0.260
2.54
28.0
0.1
29.8
1.102
3.75
1.173
0.148
L2
1.14
1.70
0.045
0.067
L3
2.65
2.95
0.104
0.116
45°
V1
TO-220B Non-Ins
Typ.
4.60
L1
C
Min.
4.40
H
G
Max.
A
G
B
Typ.
Inches
45°
Dimensions
Ref.
m
5m
E
M
3.
Min.
A
C2
F
L3
Φ
ax
H
D
V1
L1
C3
L2
C
TO-220F Ins
Min.
4.80
0.173
0.83
0.029
Typ.
Max.
B
0.74
C
0.48
0.75
0.019
0.030
C2
2.40
2.70
0.094
0.106
C3
2.60
3.00
0.102
0.118
D
8.80
9.30
0.346
0.366
E
9.70
10.3
0.382
0.406
F
6.40
7.00
0.252
0.276
0.80
2.54
28.0
29.8
0.031
1.102
1.173
0.045
0.067
L3
3.30
0.130
V1
45°
45°
- 4 / 5-
0.033
0.143
1.70
1.14
0.189
0.1
3.63
L1
L2
G
Max.
4.40
G
B
Typ.
Inches
A
H
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Millimeters
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ACJT12 Series
JieJie Microelectronics CO. , Ltd
FIG.1 Maximum power dissipation versus RMS
on-state current
FIG.2: RMS on-state current versus case
temperature
P(w)
18
IT(RMS) (A)
18
15
15
12
12
9
9
6
6
3
3
IT(RMS) (A)
0
0
3
6
9
12
TO-220B
(Non-Ins)
TO-220A(Ins)/
TO-220F(Ins)
Tc (℃)
0
0
15
FIG.3: Surge peak on-state current versus
number of cycles
α=180°
25
50
75
100
125
FIG.4: On-state characteristics (maximum
values)
ITM (A)
40
ITSM (A)
150
t=20ms
One cycle
120
30
100
80
20
60
40
Tj=25℃
10
Tj=125℃
20
0
1
10
Number of cycles
100
0
0
1000
3.0
2.5
2.5
2.0
IGT3
1.5 IGT1&IGT2
1.5
1.0
1.0
0.5
0.5
Tj (℃)
-20
0
20
1.5
2.0
VTM (V)
2.5
IH,IL(Tj) /IH,IL(Tj=25℃)
IGT(Tj) /IGT(Tj=25℃)
3.0
0.0
-40
1.0
FIG.6: Relative variations of holding current,
latching curretn versus junction temperature
FIG.5: Relative variations of gate trigger current
versus junction temperature
2.0
0.5
40
60
80
100
120
0.0
-40
140
IH
IL
Tj (℃)
-20
0
20
40
60
80
100
120
140
Information furnished in this document is believed to be accurate and reliable. However, Jiangsu
JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without
consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from that when
an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents. Jiangsu
JieJie assumes no responsibility for any infringement of other rights of third parties which may
result from the use of such products and information.
This document is the third version which is made in 12-June-2015. This document supersedes
and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
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