MITSUBISHI LSIs M5M54R04J-12,-15 1997.11.20 Rev.F 4194304-BIT (1048576-WORD BY 4-BIT) CMOS STATIC RAM DESCRIPTION The M5M54R04J is a family of 1048576-word by 4-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated with the high performance CMOS silicon gate process and designed for high speed application. A0 1 A1 2 address A2 3 lead package(SOJ). inputs A3 4 These device operate on a single 5V supply, and are directly A4 5 chip select TTL compatible. They include a power down feature as well. S 6 input data inputs/ DQ1 7 FEATURES outputs (5V) VCC 8 • Fast access time M5M54R04J-12 •••• 12ns(max) (0V) GND 9 M5M54R04J-15 •••• 15ns(max) data inputs/ DQ 2 10 • Low power dissipation Active •••••••••• 450mW(typ) outputs W 11 write control Stand by •••••••••• 5mW(typ) input A5 12 • Single +5V power supply A6 13 • Fully static operation : No clocks, No refresh address A7 14 • Common data I/O inputs A8 15 • Easy memory expansion by S A9 16 • Three-state outputs : OR-tie capability • OE prevents data contention in the I/O bus • Directly TTL compatible : All inputs and outputs Outline 32 The M5M54R04J is offered in a 32-pin plastic small outline J- 31 30 29 28 M5M54R04J 27 26 25 24 23 22 21 20 19 18 17 A19 A18 address A17 inputs A16 A15 output enable OE input DQ 4 data inputs/ GND (0V) outputs VCC (5V) DQ 3 data inputs/ outputs A14 A13 address A12 inputs A11 A10 NC 32P0K(SOJ) PACKAGE APPLICATION 32pin 400mil SOJ High-speed memory units BLOCK DIAGRAM A3 4 3 A4 5 A5 12 A6 13 A7 14 A8 15 S W MEMORY ARRAY 512 ROWS 8192 COLUMNS COLUMN I/O CIRCUITS 6 11 COLUMN ADDRESS COLUMN DECODERS ADDRESS DECODERS COLUMN INPUT BUFFERS OE 27 OUTPUT BUFFERS 2 DATA INPUT BUFFERS A1 A2 7 ROW ADDRESS DECODERS 1 ROW INPUT BUFFERS address inputs A0 DQ1 10 DQ2 23 DQ3 26 DQ4 data inputs/ outputs 8 24 9 25 VCC (5V) GND (0V) 16 18 19 20 21 22 28 29 30 31 32 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 address inputs MITSUBISHI ELECTRIC 1 MITSUBISHI LSIs M5M54R04J-12,-15 4194304-BIT (1048576-WORD BY 4-BIT) CMOS STATIC RAM FUNCTION The operation mode of the M5M54R04J is determined by a combination of the device control inputs S, W and OE. Each mode is summarized in the function table. A write cycle is executed whenever the low level W overlaps with the low level S. The address must be set-up before the write cycle and must be stable during the entire cycle. The data is latched into a cell on the trailing edge of W or S, whichever occurs first, requiring the set-up and hold time relative to these edge to be maintained. The output enable input OE directly controls the output stage. Setting the OE at a high level, the output stage is in a high impedance state, and the data bus contention problem in the write cycle is eliminated. A read cycle is excuted by setting W at a high level and OE at a low level while S are in an active state (S=L). When setting S at high level, the chip is in a nonselectable mode in which both reading and writing are disable. In this mode, the output stage is in a highimpedance state, allowing OR-tie with other chips and memory expansion by S. Signal-S controls the power-down feature. When S goes high, power dissapation is reduced extremely. The access time from S is equivalent to the address access time. FUNCTION TABLE Mode Non selection DQ High-impedance Icc Stand by X Write Din H L Read Dout Active Active H H High-impedance Active S H W X OE X L L L L ABSOLUTE MAXIMUM RATINGS Symbol V cc Parameter Conditions Ratings * Supply voltage VI Input voltage VO Output voltage Pd Power dissipation T opr Operating temperature -3.5 ~ 7 With respect to GND Unit V * V * -3.5 ~ VCC+0.3 V 1000 mW -3.5 ~ VCC+0.3 Ta=25 C 0 ~ 70 C Tstg(bias) Storage temperature (bias) -10 ~ 85 C T stg -65 ~ 150 C Storage temperature *Pulse width ≤ 20ns, In case of DC:-0.5V DC ELECTRICAL CHARACTERISTICS Symbol VIH VIL VOH VOL II Limits Condition Parameter Min High-level input voltage Low-level input voltage High-level output voltage Low-level output voltage Input current I OZ IOH =-4mA IOL= 8mA V I = 0~Vcc VI (S)= V IH Output current in off-state VO= 0~Vcc I CC1 Active supply current (TTL level) I CC2 (Ta=0 ~ 70 C, Vcc=5V±10% unless otherwise noted) Typ Stand by current (TTL level) VI (S)= VIH Stand by current VI (S)= Vcc≥0.2V other inputs V I≤0.2V or VI≥Vcc-0.2V AC AC MITSUBISHI ELECTRIC 10 µA 160 15ns cycle 150 90 mA 100 12ns cycle 75 15ns cycle 70 DC I CC3 0.4 2 12ns cycle DC Unit V V V V µA Vcc+0.3 0.8 2.2 -0.3 2.4 VI (S)= VIL other inputs V IH or VIL Output-open(duty 100%) Max mA 50 1 10 mA 2 MITSUBISHI LSIs M5M54R04J-12,-15 4194304-BIT (1048576-WORD BY 4-BIT) CMOS STATIC RAM CAPACITANCE (Ta=0 ~ 70 C, Vcc=5V±10% unless otherwise noted) Symbol Parameter Limit Test Condition Min Typ Max Unit CI Input capacitance V I =GND, V I =25mVrms,f=1MHz 7 pF CO Output capacitance V O=GND, VO =25mVrms,f=1MHz 8 pF Note 1: Direction for current flowing into an IC is positive (no mark). 2: Typical value is Vcc=5V,Ta=25 C 3: CI,CO are periodically sampled and are not 100% tested. AC ELECTRICAL CHARACTERISTICS (Ta=0 ~ 70 °C, Vcc=5V±10% unless otherwise noted) (1)MEASUREMENT CONDITION Input pulse levels •••••••••••••••••••••••• V IH =3.0V, V IL =0.0V Input rise and fall time •••••••••••••••••••••••••••••••••••••• 3ns Input timing reference levels •••••••••••• V IH =1.5V, V IL=1.5V Output timing reference levels •••••••••• V OH=1.5V, V OL =1.5V Output loads •••••••••••••••••••••••••••••••••••••••••• Fig1 ,Fig2 Vcc OUTPUT Z0=50Ω 480Ω DQ RL=50Ω 255Ω 5pF (including scope and JIG) VL=1.5V Fig.1 Output load Fig.2 Output load for t en, t MITSUBISHI ELECTRIC dis 3 MITSUBISHI LSIs M5M54R04J-12,-15 4194304-BIT (1048576-WORD BY 4-BIT) CMOS STATIC RAM (2)READ CYCLE Limits M5M54R04J -12 Parameter Symbol Min Max M5M54R04J -15 Min Unit Max tCR Read cycle time ta (A) Address access time 12 15 ns ta(S) Chip select access time 12 15 ns ta (OE) Output enable access time 6 8 ns tdis(S) Output disable time after S high 0 6 0 7 ns tdis (OE) Output disable time after OE high 0 6 0 7 ns ten(S) Output enable time after S low 0 0 ns ten (OE) Output enable time after OE low 0 0 ns tv(A) Data valid time after address change 3 3 ns tPU Power-up time after chip selection 0 0 ns tPD Power-down time after chip selection 12 15 12 ns 15 ns (3)WRITE CYCLE Limits M5M54R04J -12 Parameter Symbol Min Max M5M54R04J -15 Min Unit Max tCW Write cycle time 12 15 ns tw(W) Write pulse width 10 12 ns tsu (A)1 Address setup time(W) 0 0 ns tsu (A)2 Address setup time(S) 0 0 ns tsu (S) Chip select setup time 10 12 ns tsu (D) Data setup time 6 7 ns th (D) Data hold time 0 0 ns trec(W) Write recovery time 1 1 ns tdis (W) Output disable time after W low 0 6 0 7 ns tdis Output disable time after OE high 0 6 0 7 ns ten (W) Output enable time after W high 0 0 ns ten (OE) Output enable time after OE low 0 0 ns tsu(A-WH) Address to W High 10 12 ns (OE) MITSUBISHI ELECTRIC 4 MITSUBISHI LSIs M5M54R04J-12,-15 4194304-BIT (1048576-WORD BY 4-BIT) CMOS STATIC RAM (4)TIMING DIAGRAMS Read cycle 1 A 0~19 t CR VIH VIL ta (A) tv (A) tv (A) DQ1~4 VOH PREVIOUS DATA VALID VOL UNKNOWN DATA VALID W=H S=L OE=L Read cycle 2 (Note 4) t CR VIH S VIL tdis (S) ta(S) (Note 5) ten (S) DQ1~4 (Note 5) VOH UNKNOWN DATA VALID VOL tPU tPD ICC1 Icc 50% ICC2 50% W=H OE=L Note 4. Addresses valid prior to or coincident with S transition low. 5. Transition is measured ±500mv from steady state voltage with specified loading in Figure 2. Read cycle 3 (Note 6) t CR VIH OE VIL ta (OE) (Note 5) DQ1~4 VOH tdis (OE) (Note 5) ten (OE) UNKNOWN DATA VALID VOL W=H S=L Note 6. Addresses and S valid prior to OE transition low by (ta(A)-ta(OE)), (ta(S)-ta(OE)) MITSUBISHI ELECTRIC 5 MITSUBISHI LSIs M5M54R04J-12,-15 4194304-BIT (1048576-WORD BY 4-BIT) CMOS STATIC RAM Write cycle ( W control mode ) t CW A 0~19 S VIH VIL tsu (S) VIH VIL (Note7) (Note7) tsu (A-WH) OE VIH VIL tsu (A) W tw (W) trec (W) VIH VIL tsu (D) th(D) DQ1~4 (Input Data) VIH DATA STABLE VIL tdis(W) (Note 5) ten (OE) (Note 5) ten (W) tdis(OE) DQ1~4 (Output Data) VOH VOL Hi-Z Write cycle (S control mode ) t CW A 0~19 VIH VIL tsu (A) tsu (S) trec (W) VIH S VIL tw(W) VIH W VIL (Note7) (Note7) tsu (D) DQ1~4 VIH (Input Data) VIL th (D) DATA STABLE tdis (W) ten (S) DQ1~4 (Output Data) VOH (Note5) (Note5) Hi-Z VOL (Note8) Note 7: Hatching indicates the state is don't care. 8: When the falling edge of W is simultaneous or prior to the falling edge of S, the output is maintained in the high impedance. 9: t en,tdis are periodically sampled and are not 100% tested. MITSUBISHI ELECTRIC 6