APT100GF60JU2 ISOTOP® Boost chopper NPT IGBT K C VCES = 600V IC = 100A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch Features • Non Punch Through (NPT) THUNDERBOLT IGBT ® • • • - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated ISOTOP® Package (SOT-227) Very low stray inductance High level of integration G E K E C G Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant ISOTOP Symbol VCES IC1 IC2 ICM VGE PD IFA V IFRMS Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) TC = 80°C Max ratings 600 120 100 320 ±20 416 30 39 Unit V A V W A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. www.microsemi.com 1-9 APT100GF60JU2 – Rev 1 June, 2006 Absolute maximum ratings APT100GF60JU2 All ratings @ Tj = 25°C unless otherwise specified Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Eon Eoff Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn off Switching Energy Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V, IC = 100µA Tj = 25°C VGE = 0V VCE = 600V Tj = 125°C T VGE =15V j = 25°C IC = 100A Tj = 125°C VGE = VCE, IC = 1mA VGE = ±20V, VCE = 0V Min Test Conditions VGE = 0V VCE = 25V f = 1MHz Min VGS = 15V VBus = 300V IC = 100A Resistive Switching (25°C) VGE = 15V VBus = 400V IC = 100A R G = 5Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 100A R G = 5Ω www.microsemi.com Typ Max 600 2.0 2.2 3 Typ 4300 470 400 330 290 200 26 25 150 30 3.35 2.85 26 25 170 40 4.3 3.5 100 1000 2.5 Unit V µA V 5 ±150 V nA Max Unit pF nC ns mJ ns mJ 2-9 APT100GF60JU2 – Rev 1 June, 2006 Electrical Characteristics APT100GF60JU2 Symbol VF Characteristic Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Reverse Recovery Time trr Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 23 IF = 30A VR = 400V di/dt =200A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 85 160 4 8 130 700 70 1300 30 Reverse Recovery Time IRRM Maximum Reverse Recovery Current Qrr Reverse Recovery Charge trr Qrr Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IRRM IF = 30A VR = 400V di/dt =1000A/µs Min Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) 250 500 Tj = 125°C Characteristic RthJC Min Typ IGBT Diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight www.microsemi.com Max 1.8 44 Thermal and package characteristics Symbol Typ 1.6 1.9 1.4 2500 -55 Unit V µA pF ns A nC ns nC A Max 0.3 1.21 20 Unit °C/W V 150 300 1.5 29.2 °C N.m g 3-9 APT100GF60JU2 – Rev 1 June, 2006 Chopper diode ratings and characteristics APT100GF60JU2 Typical IGBT Performance Curve Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 300 Tc=-55°C 250µs Pulse Test < 0.5% Duty cycle 300 250 Ic, Collector Current (A) Tc=25°C 200 150 Tc=125°C 100 50 250µs Pulse Test < 0.5% Duty cycle 250 200 Tc=25°C 150 100 Tc=125°C 50 0 0 0 1 2 3 VCE, Collector to Emitter Voltage (V) 0 4 1 2 Transfer Characteristics VGE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 250 200 150 100 TJ =25°C 50 TJ =125°C TJ =-55°C 0 0 1 2 3 4 5 6 7 8 9 IC = 100A TJ = 25°C 16 14 VCE=480V 8 6 4 2 0 0 50 100 VCE, Collector to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V) Ic=200A 5 4 3 Ic=100A 2 Ic=50A 1 0 6 8 10 12 14 200 250 300 350 On state Voltage vs Junction Temperature 4 3.5 Ic=200A 3 2.5 Ic=100A 2 1.5 Ic=50A 1 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 0.5 0 -50 16 VGE, Gate to Emitter Voltage (V) -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) Breakdown Voltage vs Junction Temp. DC Collector Current vs Case Temperature 160 Ic, DC Collector Current (A) 1.20 1.10 1.00 0.90 0.80 0.70 -50 150 Gate Charge (nC) On state Voltage vs Gate to Emitter Volt. 6 VCE=300V 10 10 8 TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle VCE=120V 12 VGE, Gate to Emitter Voltage (V) 7 4 Gate Charge 18 250µs Pulse Test < 0.5% Duty cycle 3 VCE, Collector to Emitter Voltage (V) 300 Collector to Emitter Breakdown Voltage (Normalized) Tc=-55°C -25 0 25 50 75 140 120 100 80 60 40 20 100 125 TJ, Junction Temperature (°C) 0 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4-9 APT100GF60JU2 – Rev 1 June, 2006 Ic, Collector Current (A) 350 APT100GF60JU2 Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) 30 VGE = 15V 25 Tj = 25°C VCE = 400V RG = 5Ω 20 15 25 50 75 100 125 250 200 VGE=15V, TJ=125°C 150 100 50 150 25 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current VGE=15V, TJ=125°C 150 TJ = 125°C 40 20 TJ = 25°C 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150 25 Turn-On Energy Loss vs Collector Current VCE = 400V RG = 5Ω 6 TJ =125°C, VGE=15V 4 T J=25°C, VGE=15V 2 0 0 25 50 75 100 125 Eoff, Turn-off Energy Loss (mJ) 6 8 Eon, Turn-On Energy Loss (mJ) 125 60 0 50 75 100 125 ICE, Collector to Emitter Current (A) 150 Turn-Off Energy Loss vs Collector Current VCE = 400V VGE = 15V RG = 5Ω 5 4 TJ = 125°C TJ = 25°C 3 2 1 0 150 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) ICE, Collector to Emitter Current (A) 150 Switching Energy Losses vs Junction Temp. Switching Energy Losses vs Gate Resistance 10 VCE = 400V VGE = 15V TJ= 125°C 12 Eon, 200A Switching Energy Losses (mJ) Switching Energy Losses (mJ) 100 VCE = 400V, VGE = 15V, RG = 5Ω tf, Fall Time (ns) tr, Rise Time (ns) VCE = 400V RG = 5Ω 20 16 75 Current Fall Time vs Collector Current 80 40 50 ICE, Collector to Emitter Current (A) 80 60 VGE=15V, TJ=25°C VCE = 400V RG = 5Ω Eoff, 200A Eoff, 100A 8 Eon, 100A Eoff, 50A 4 Eon, 50A 0 0 10 20 30 40 Gate Resistance (Ohms) 50 www.microsemi.com VCE = 400V V GE = 15V 8 Eon, 200A RG = 5Ω Eoff, 200A 6 Eon, 100A 4 Eoff, 100A 2 Eoff, 50A Eon, 50A 0 0 25 50 75 100 TJ, Junction Temperature (°C) 125 5-9 APT100GF60JU2 – Rev 1 June, 2006 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 35 APT100GF60JU2 Capacitance vs Collector to Emitter Voltage Minimum Switching Safe Operating Area 10000 350 IC, Collector Current (A) C, Capacitance (pF) Cies 1000 Coes Cres 300 250 200 150 100 50 100 0 0 10 20 30 40 50 0 VCE, Collector to Emitter Voltage (V) 200 400 600 800 VCE, Collector to Emitter Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.25 0.9 0.7 0.2 0.1 0.5 0.3 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 120 1 10 Operating Frequency vs Collector Current VCE = 400V D = 50% RG = 5Ω TJ = 125°C 100 80 60 40 20 0 20 www.microsemi.com 40 60 80 100 IC, Collector Current (A) 120 6-9 APT100GF60JU2 – Rev 1 June, 2006 0.15 Fmax, Operating Frequency (kHz) Thermal Impedance (°C/W) 0.35 APT100GF60JU2 www.microsemi.com 7-9 APT100GF60JU2 – Rev 1 June, 2006 Typical Diode Performance Curve www.microsemi.com 8-9 APT100GF60JU2 – Rev 1 June, 2006 APT100GF60JU2 APT100GF60JU2 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) Cathode 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) Collector * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate ISOTOP® is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 9-9 APT100GF60JU2 – Rev 1 June, 2006 Dimensions in Millimeters and (Inches)