INCHANGE Semiconductor HBR20100CT Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overvoltage protection，High reliability ·100% avalanche tested ·RoHS product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High Frequency switch power Supply ·Free wheeling diodes and polarity protection applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage 100 V IF(AV) Average Rectified Forward Current (Per Leg) (Total) 10 20 A IFSM Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions 180 A Junction Temperature 175 ℃ -40~150 ℃ TJ Tstg Storage Temperature Range isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor Schottky Barrier Rectifier HBR20100CT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX UNIT 1.9 ℃/W MAX UNIT ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER VF Maximum Instantaneous Forward Voltage IR Maximum Instantaneous Reverse Current isc website：www.iscsemi.com CONDITIONS IF= 10A ; Tj= 25℃ 0.85 IF= 10A ; Tj= 125℃ 0.72 VR= VRWM;Tj= 25℃ 10 uA VR= VRWM;Tj= 125℃ 5 mA 2 V isc & iscsemi is registered trademark