BCR555 PNP Silicon Digital Transistor • Built in bias resistor (R1= 2.2 kΩ, R2= 10 kΩ) 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07183 Type BCR555 Marking XDs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Input forward voltage Vi(fwd) 20 Input reverse voltage Vi(rev) 5 Collector current IC 500 mA Total power dissipation- Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg Value Unit V TS ≤ 79 °C Thermal Resistance Parameter Symbol RthJS Junction - soldering point1) -65 ... 150 Value ≤ 215 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2011-07-28 BCR555 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 Unit V IC = 100 µA, IB = 0 Collector-base breakdown voltage 50 - - ICBO - - 100 nA IEBO - - 0.65 mA hFE 70 - - - - - 0.3 V Vi(off) 0.4 - 1 Vi(on) 0.5 - 1.4 Input resistor R1 1.5 2.2 2.9 Resistor ratio R1/R2 0.19 0.22 0.24 - 150 - V(BR)CBO IC = 10 µA, IE = 0 Collector-base cutoff current VCB = 50 V, IE = 0 Emitter-base cutoff current VEB = 5 V, IC = 0 DC current gainIC = 50 mA, VCE = 5 V Collector-emitter saturation voltage1) VCEsat IC = 50 mA, IB = 2.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 10 mA, VCE = 0.3 V kΩ - AC Characteristics Transition frequency fT MHz IC = 50 mA, VCE = 5 V, f = 100 MHz 1Pulse test: t < 300µs; D < 2% 2 2011-07-28 BCR555 DC current gain hFE = ƒ(IC) VCE = 5 V (common emitter configuration) Collector-emitter saturation voltage VCEsat = ƒ(IC ), IC/IB = 20 10 3 0.55 V 0.45 hFE VCEsat 10 2 0.4 0.35 0.3 10 1 0.25 -40 °C -25 °C 25 °C 85 °C 125 °C 10 0 -40 °C -25 °C 25 °C 85 °C 125 °C 0.2 0.15 0.1 0.05 10 -1 -4 10 10 -3 10 -2 10 -1 A 10 0 -3 10 0 10 -2 10 -1 IC 0 Input off voltage Vi(off) = ƒ(IC) VCE = 5V (common emitter configuration) 10 1 10 2 V V -40 °C -25 °C 25 °C 85 °C 125 °C Vi(off) Vi(on) 10 IC Input on Voltage Vi (on) = ƒ(IC) VCE = 0.3V (common emitter configuration) 10 1 A -40 °C -25 °C 25 °C 85 °C 125 °C 10 0 10 0 10 -1 -4 10 10 -3 10 -2 10 -1 A 10 10 -1 -5 10 0 IC 10 -4 10 -3 A 10 -2 IC 3 2011-07-28 BCR555 Total power dissipation P tot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(tp) 10 3 400 K/W mW 10 2 RthJS Ptot 300 250 10 1 200 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 150 10 0 100 50 0 0 20 40 60 80 120 °C 100 10 -1 -6 10 150 TS 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) 10 4 Ptotmax/PtotDC - 10 3 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2011-07-28 Package SOT23 BCR555 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 5 2011-07-28 BCR555 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2011-07-28