Dynex MP02/190-12 Phase control dual scr, scr/diode module Datasheet

MP02 XXX 190 Series
MP02 XXX 190 Series
Phase Control Dual SCR, SCR/Diode Modules
Replaces December 1998 version, DS4479-3.0
DS4479-4.0 January 2000
FEATURES
KEY PARAMETERS
VDRM
ITSM
IT(AV)(per arm)
Visol
■ Dual Device Module
■ Electrically Isolated Package
■ Pressure Contact Construction
■ International Standard Footprint
1400V
6800A
190A
2500V
CIRCUIT OPTIONS
■ Alumina (non-toxic) Isolation Medium
Code
Circuit
HBT
APPLICATIONS
■ Motor Control
■ Controlled Rectifier Bridges
HBP
■ Heater Control
■ AC Phase Control
HBN
VOLTAGE RATINGS
Type
Number
MP02/190-14
MP02/190-12
MP02/190/10
Repetitive
Peak
Voltages
VDRM VRRM
1400
1200
1000
PACKAGE OUTLINE
Conditions
Tvj = 125oC
IDRM = IRRM = 30mA
1
2
3
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available. For full description of
part number see "Ordering Instructions" on page 3.
Module type code: MP02.
See Package Details for further information
CURRENT RATINGS - PER ARM
Parameter
Symbol
IT(AV)
IT(RMS)
Mean on-state current
RMS value
Conditions
Halfwave, resistive load
Tcase = 75oC
Max.
Units
Tcase = 75oC
190
A
Tcase = 85oC
160
A
Theatsink = 75oC
150
A
Theatsink = 85oC
125
A
300
A
1/10
MP02 XXX 190 Series
SURGE RATINGS - PER ARM
Parameter
Symbol
ITSM
I 2t
Surge (non-repetitive) on-state current
2
I t for fusing
Max.
Units
10ms half sine; VR = 0
Tj = 125oC
VR = 50% VRRM
6800
A
5500
A
10ms half sine; VR = 0
Tj = 125oC
VR = 50% VRRM
231000
A2s
150000
A 2s
Max.
Units
dc
0.17
o
C/W
halfwave
0.18
o
C/W
3 phase
0.19
o
C/W
Mounting torque = 6Nm
with mounting compound
0.07
o
Conditions
THERMAL & MECHANICAL RATINGS
Symbol
Rth(j-c)
Parameter
Thermal resistance - junction to case
per Thyristor or Diode
Conditions
Rth(c-hs)
Thermal resistance - case to heatsink
per Thyristor or Diode
Tvj
Virtual junction temperature
125
o
C
Tsto
Storage temperature range
-40 to 125
o
C
Visol
Isolation voltage
Commoned terminals to base plate
AC RMS, 1min, 50Hz
C/W
2.5
kV
Max.
Units
1.75
V
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Conditions
On-state voltage
At 1000A, Tcase = 25oC - See Note 1
Peak reverse and off-state current
At VRRM/VDRM, Tj = 125oC
30
mA
dV/dt
Linear rate of rise of off-state voltage
To 60% VDRM Tj = 125oC
200*
V/µs
dI/dt
Rate of rise of on-state current
From 67% VDRM to 400A
Repetitive 50Hz
Gate source 20V, 20Ω
Rise time 0.5µs, Tj =125oC
100
A/µs
VT(TO)
Threshold voltage
At Tvj = 125oC - See Note 1
1.05
V
On-state slope resistance
At Tvj = 125oC - See Note 1
0.80
mΩ
VTM
IRRM/IDRM
rT
* Higher dV/dt values available, contact factory for particular requirements.
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
2/10
MP02 XXX 190 Series
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Conditions
Typ.
Max.
Units
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25oC, RL = 6Ω
-
3.0
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25oC, RL = 6Ω
-
200
mA
VGD
Gate non-trigger voltage
VDRM = 5V, Tcase = 25oC
-
0.2
V
VRGM
Peak reverse gate voltage
-
5.0
V
IFGM
Peak forward gate current
-
4
A
PGM
Peak gate power
-
16
W
PG(AV)
Mean gate power
-
3
W
Anode positive with respect to cathode
ORDERING INSTRUCTIONS
Part number is made up as follows:
Examples:
MP02 HBT 190 - 16
MP
02
HBT
175
16
= Pressure contact module
= Outline type
= Circuit configuration code (see "circuit options" - front page)
= Nominal average current rating at Tcase = 75oC
= VRRM/100
MP02 HBP190-14
MP02 HBN190-12
Note: Diode ratings and characteristics are comparable with SCR in types HBP or HBN.
Types HBP or HBN can also be supplied with diode polarity reversed, to special order.
MOUNTING RECOMMENDATIONS
Adequate heatsinking is required to maintain the base
temperature at 75oC if full rated current is to be achieved.
Power dissipation may be calculated by use of VT(TO) and rT
information in accordance with standard formulae. We can
provide assistance with calculations or choice of heatsink if
required.
The heatsink surface must be smooth and flat; a surface finish
of N6 (32µin) and a flatness within 0.05mm (0.002") are
recommended.
Immediately prior to mounting, the heatsink surface should be
lightly scrubbed with fine emery, Scotch Brite or a mild
chemical etchant and then cleaned with a solvent to remove
oxide build up and foreign material. Care should be taken to
ensure no foreign particles remain.
An even coating of thermal compound (eg. Unial) should be
applied to both the heatsink and module mounting surfaces.
This should ideally be 0.05mm (0.002") per surface to ensure
optimum thermal performance.
After application of thermal compound, place the module
squarely over the mounting holes, (or 'T' slots) in the heatsink.
Using a torque wrench, slowly tighten the recommended fixing
bolts at each end, rotating each in turn no more than 1/4 of a
revolution at a time. Continue until the required torque of 6Nm
(55lb.ins) is reached at both ends.
It is not acceptable to fully tighten one fixing bolt before starting
to tighten the others. Such action may DAMAGE the module.
3/10
MP02 XXX 190 Series
2500
Instantaneous on-state current IT - (A)
CURVES
2000
1500
Tj = 125˚C
1000
500
0
0
1.0
2.0
3.0
Instantaneous on-state voltage VT - (V)
4.0
Fig. 1 Maximum (limit) on-state characteristics (thyristor or diode) - See Note 1
100
Pulse
Width
µs
Pulse Frequency Hz Table gives pulse power PGM in watts
100
50
400
75W
50W
20
25
100
10 500
1ms
10ms
100
100
100
100
50
-
100
100
100
100
100
10
100
100
100
25
-
10W
5W
Tj = 25˚C
Tj = 125˚C
1.0
9%
t9
er
i
lim
%
t1
p
Up
r
we
i
lim
Lo
VGD
0.1
0.001
0.01
0.1
Gate trigger current IGT - (A)
Fig. 2 Gate trigger characteristics
4/10
100W
Tj = -40˚C
Gate trigger voltage VGT - (V)
VFGM
1.0
10
IFGM
MP02 XXX 190 Series
0.3
0.2
Rth(j-c)
0.1
0
0.001
0.010
0.100
1.0
10
100
Time - (s)
Fig. 3 Transient thermal impedance (DC) - (Thyristor or diode)
20
15
180
I2t
10
140
5
0
100
10
1
ms
1
2 3 45
10
I2t value - A2s x 103
Peak half sine wave on-state current - (kA)
Thermal Impedance - (˚C/W)
Rth(j-hs)
60
20 30 50
cycles at 50Hz
Duration
Fig. 4 Surge (non-repetitive) on-state current vs time (with 50% VRRM, Tcase = 125˚C (Thyristor or diode)
5/10
On-state power loss per device - (W)
MP02 XXX 190 Series
300
180˚
120˚
250
90˚
200
60˚
30˚
150
100
50
0
0
50
100
150
200
Mean on-state current IT(AV) - (A)
250
Fig. 5 On-state power loss per arm vs forward current at various conduction angles, sine wave, 50/60Hz
400
On-state power loss per device - (W)
d.c.
350
180˚
300
120˚
250
90˚
60˚
200
30˚
150
100
50
0
0
50
100
150
200
Mean on-state current IT(AV) - (A)
250
300
Fig. 6 On-state power loss per arm vs forward current at various conduction angles, square wave, 50/60Hz
6/10
Maximum permissible case temperature - (˚C)
MP02 XXX 190 Series
140
120
100
80
60
40
20
30˚
0
0
50
60˚
90˚
120˚
180˚
100
150
200
Mean on-state curren IT(AV) - (A)
250
Maximum permissible case temperature - (˚C)
Fig. 7 Maximum permissible case temperature vs forward current per arm at various conduction angles, sine wave, 50/60Hz
140
120
100
80
60
d.c.
40
20
30˚
0
0
50
60˚
90˚ 120˚
100
150
200
Mean on-state current IT(AV) - (A)
180˚
250
300
Fig. 8 Maximum permissible case temperature vs forward current per arm at various conduction angles, square wave, 50/60Hz
7/10
MP02 XXX 190 Series
1200
0.02
Rth(hs-a) ˚C/W
R - Load
Total power - (W)
1000 0.04
800
0.08
0.10
0.12
0.15
0.20
0.30
0.40
600
400
200
0
0
L - Load
20
40
60
80 100 120 140
Maximum ambient temperature - (˚C)
0
200
400
D.C. output current - (A)
Fig. 9 50/60Hz single phase bridge dc output current vs power loss and maximum permissible ambient temperature for
various values of heatsink thermal resistance.
(Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal).
1200
0.04 0.02 Rth(hs-a) ˚C/W
Total power - (W)
1000
R & L- Load
800
0.08
600
0.10
0.12
0.15
400
0.20
200
0.30
0.40
0
0
20
40
60
80 100 120 140
Maximum ambient temperature - (˚C)
0
200
400
D.C. output current - (A)
Fig. 9 50/60Hz 3- phase bridge dc output current vs power loss and maximum permissible ambient temperature for various
values of heatsink thermal resistance.
(Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal).
8/10
MP02 XXX 190 Series
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
23
24
15
2 holes Ø6.5
K2
5
12.8
24
G2
34
23
13
K1
80
1
2
3
30
3x M6
G1
94
Nominal weight: 350g
Recommended fixings for mounting: M6 socket head cap screws
Recommended mounting torque: 6Nm (55lb.ins)
Recommended torque for electrical connections: 5Nm (44lb.ins)
Maximum torque for electrical connections: 8Nm (70lb.ins)
Module outline type code: MP02
CIRCUIT CONFIGURATIONS
G1K1
K2 G2
2
1
3
HBT
G1K1
1
2
3
HBP
K2 G2
1
2
3
HBN
9/10
MP02 XXX 190 Series
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
Recommendations for clamping power semiconductors
AN4839
Thyristor and diode measurement with a multi-meter
AN4853
Use of V , r on-state characteristic
AN5001
TO
T
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
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SALES OFFICES
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Germany Tel: 07351 827723
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4479-4 Issue No. 4.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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