LIGITEK LMD5711-2ASR-XX Dot matrix digit led display (1.2inch) Datasheet

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
OFFICE:7F.,NO.208,SEC.3,JHONGYANG Rd.,Tucheng City Taipei Hsien,Taiwan R.O.C
TEL:(02)22677686(REP)
FAX:(02)22675286,(02)22695616
DOT MATRIX DIGIT LED DISPLAY (1.2Inch)
LMD5711/2ASR-XX
DATA SHEET
DOC. NO
:
QW0905-LMD5711/2ASR-XX
REV.
:
A
DATE
: 13 - Oct - 2004
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 1/7
PART NO. LMD5711/2ASR-XX
Package Dimensions
22.3
(0.878")
4.5X6=
27.0
(1.063")
8.0
(0.315")
39.1
(1.539")
4.5X4=18.0
(0.709")
33.1
(1.303")
ψ3.0(0.118)
LMD5711/2ASR-XX
LIGITEK
0.51
TYP.
7.0±0.5
2.54X6=15.24
(0.6")
PIN NO.1
Note : 1.All dimension are in millimeters and (lnch) tolerance is ± 0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 2/7
PART NO. LMD5711/2ASR-XX
Internal Circuit Diagram
COLUMN
ROW PIN
LMD5711ASR-XX
1
9
2
14
3
8
4
5
12
5
1
6
7
7
2
COLUMN
ROW PIN
LMD5712ASR-XX
1
9
2
14
3
8
4
5
12
5
1
6
7
7
2
1
13
2 3 4
3 4,11 10
5
6
1
13
2 3 4
3 4,11 10
5
6
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 3/7
PART NO. LMD5711/2ASR-XX
Electrical Connection
PIN NO.
LMD5711ASR-XX
PIN NO.
LMD5712ASR-XX
1
Anode Row 5
1
Cathode Row 5
2
Anode Row 7
2
Cathode Row 7
3
Cathode Column 2
3
Anode Column 2
4
Cathode Column 3
4
Anode Column 3
5
Anode Row 4
5
Cathode Row 4
6
Cathode Column 5
6
Anode Column 5
7
Anode Row 6
7
Cathode Row 6
8
Anode Row 3
8
Cathode Row 3
9
Anode Row 1
9
Cathode Row 1
10
Cathode Column 4
10
Anode Column 4
11
Cathode Column 3
11
Anode Column 3
12
Anode Row 4
12
Cathode Row 4
13
Cathode Column 1
13
Anode Column 1
14
Anode Row 2
14
Cathode Row 2
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Property of Ligitek Only
Page 4/7
PART NO. LMD5711/2ASR-XX
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
SR
Forward Current Per Chip
IF
30
mA
Peak Forward Current Per
Chip (Duty 1/10,0.1ms
Pulse Width)
IFP
100
mA
Power Dissipation Per Chip
PD
100
mW
Ir
10
μA
Operating Temperature
Topr
-25 ~ +85
℃
Storage Temperature
Tstg
-25 ~ +85
℃
Reverse Current Per Any Chip
Solder Temperature 1-16 Inch Below Seating Plane For 3 Seconds At 260 ℃
Part Selection And Application Information(Ratings at 25℃)
common
cathode
Material Emitted or anode
CHIP
PART NO
△λ
(nm)
(nm)
Vf(v)
Iv(mcd)
Min.
Typ. Max. Min.
Typ.
1.5
1.7
7.2
IV-M
Common
Cathode
LMD5711ASR-XX
GaAlAs
LMD5712ASR-XX
Electrical
λP
660
Red
20
Common
Anode
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
2.4
4.0
2:1
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Page 5/7
PART NO. LMD5711/2ASR-XX
Test Condition For Each Parameter
Symbol
Unit
Test Condition
Forward Voltage Per Chip
Vf
volt
If=20mA
Luminous Intensity Per Chip
Iv
mcd
If=10mA
Peak Wavelength
λp
nm
If=20mA
△λ
nm
If=20mA
Ir
μA
Vr=5V
Parameter
Spectral Line Half-Width
Reverse Current Any Chip
Luminous Intensity Matching Ratio
IV-M
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page6/7
PART NO. LMD5711/2ASR-XX
Typical Electro-Optical Characteristics Current
SR CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
1.0
2.0
3.0
4.0
1.0
5.0
10
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
600
650
700
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature(℃)
Ambient Temperature(℃)
Relative Intensity@20mA
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25℃
Fig.3 Forward Voltage vs. Temperature
-20
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
750
80
100
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Page 7/7
PART NO. LMD5711/2ASR-XX
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=10mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resisance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under ondition
of hogh temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5℃
2.RH=90%~95%
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hous.
1.Ta=105 ℃±5℃&-40 ℃±5℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
Thermal Shock Test
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11
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