ES1A THRU ES1J HD AJ 42 SMAJ Plastic-Encapsulate Diodes Super Fast Recovery Rectifier Diode Features ●Io 1A SMAJ ●VRRM 50V-600V ●High surge current capability ●Glass passivated chip ● Polarity: Color band denotes cathode Applications ● Rectifier Marking ● ES1X X : From A To J ES1 Item Symbol Unit Test Conditions A B C D E G 150 200 300 400 500 600 105 210 280 350 420 Repetitive Peak Reverse Voltage VRRM V 50 100 Maximum RMS Voltage V RMS V 35 70 Average Forward Current IF(AV) A 60HZ Half-sine wave, Resistance load, Ta=75 ℃ 1.0 Surge(Non-repetitive)Forward Current IFSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ 30 TJ ℃ -55~+125 TSTG ℃ -55 ~ +150 Junction Temperature Storage Temperature 140 H J Electrical Characteristics (T=25℃ Unless otherwise specified） ES1 Item Symbol Unit Peak Forward Voltage VF V Maximum reverse recovery time trr ns Peak Reverse Current Thermal Resistance(Typical) Typical junction capacitance IRRM1 I μA RθJ-A Test Condition IF =1.0A A B Cj pF D E 0.95 IF=0.5A,IR=1.0A,Irr=0.25A 1.25 G H J 1.70 35 Ta =25℃ 5 Ta =100℃ 100 Between junction and ambient 55 Between junction and terminal 25 Measured at 1MHZ and Applied Reverse Voltage of 4.0 V.D.C. 15 VRM=VRRM ℃/W RθJ-L C 1) 1) Notes: Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas High Diode Semiconductor 1 FIG.2:MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT FIG.1: FORWARD CURRENT DERATING CURVE 1.0 : IFSM(A) IO(A) Typical Characteristics 50 40 0.8 8.3ms Single Half Sine Wave JEDEC Method 0.6 30 0.4 20 Single Phase Half Wave 60HZ Resistive or Inductive Load 0.375''(9.5mm) Lead Length 0.2 0 0 50 10 150 100 IR(uA) IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS 20 ES1A-ES1D ES1F-ES1G 10 1 2 10 20 100 Number of Cycles FIG.4:TYPICAL REVERSE CHARACTERISTICS 1000 100 4.0 ES1H-ES1J 2.0 Tj=125℃ 10 1.0 0.4 Tj=100℃ 0.2 1.0 0.1 TJ=25℃ Pulse width=300us 1% Duty Cycle Tj=25℃ 0.1 0.02 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 0 VF(V) 20 40 60 80 100 Voltage(%) FIG.5: Diagram of circuit and Testing wave form of reverse recovery time I D trr IF VR IF RL t 0 IRR IR High Diode Semiconductor 2 SMAJ 0.067 (1.70) 0.110(2.80) 0.098(2.50) 0.047 (1.20) 0.177(4.50) 0.157(3.99) 0.012(0.305) 0.006(0.152) 0.096(2.42) 0.078(1.98) 0.060(1.52) 0.030(0.76) 0.008(0.203)MAX. 0.222(5.66) 0.194(4.93) Dimensions in inches and (millimeters) SMAJ 4.12 1.8 JSHD JSHD High Diode Semiconductor 3 Reel Taping Specifications For Surface Mount Devices-SMA High Diode Semiconductor 4