MAC15SD, MAC15SM, MAC15SN Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for industrial and consumer applications for full wave control of AC loads such as appliance controls, heater controls, motor controls, and other power switching applications. http://onsemi.com TRIACS 15 AMPERES RMS 400 thru 800 VOLTS Features • Sensitive Gate allows Triggering by Microcontrollers and other • • • • • • • • • Logic Circuits High Immunity to dv/dt − 25 V/ms minimum at 110°C High Commutating di/dt − 8.0 A/ms minimum at 110°C Maximum Values of IGT, VGT and IH Specified for Ease of Design On-State Current Rating of 15 Amperes RMS at 70°C High Surge Current Capability − 120 Amperes Blocking Voltage to 800 Volts Rugged, Economical TO−220AB Package Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3 Pb−Free Packages are Available* MT2 MARKING DIAGRAM MAC15SxG AYWW 1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) 2 3 Symbol Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC15SD MAC15SM MAC15SN VDRM, VRRM On−State RMS Current (Full Cycle Sine Wave, 60Hz, TJ = 70°C) IT(RMS) 15 A ITSM 120 A I2t 60 A2s PGM 20 W PG(AV) 0.5 W Operating Junction Temperature Range TJ −40 to +110 °C Device Storage Temperature Range Tstg −40 to +150 °C Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 70°C) Average Gate Power (t = 8.3 ms, TC = 70°C) Unit TO−220AB CASE 221A−09 STYLE 4 Rating Peak Non-repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = 110°C) Value V = D, M, or N = Assembly Location = Year = Work Week = Pb−Free Package PIN ASSIGNMENT *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. December, 2005 − Rev. 5 x A Y WW G 400 600 800 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. © Semiconductor Components Industries, LLC, 2005 MT1 G 1 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 ORDERING INFORMATION Package Shipping MAC15SD TO−220AB 50 Units / Rail MAC15SDG TO−220AB (Pb−Free) 50 Units / Rail MAC15SM TO−220AB 50 Units / Rail MAC15SMG TO−220AB (Pb−Free) 50 Units / Rail MAC15SN TO−220AB 50 Units / Rail MAC15SNG TO−220AB (Pb−Free) 50 Units / Rail Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MAC15S/D MAC15SD, MAC15SM, MAC15SN THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol Value Unit RqJC RqJA 2.0 62.5 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max − − − − 0.01 2.0 − − 1.8 Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 110°C IDRM, IRRM mA ON CHARACTERISTICS Peak On-State Voltage (Note 2) (ITM = "21A) VTM Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) IGT Hold Current (VD = 12 V, Gate Open, Initiating Current = "150mA) IH Latching Current (VD = 24V, IG = 5mA) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) IL − − − 2.0 3.0 3.0 5.0 5.0 5.0 − 3.0 10 − − − 5.0 10 5.0 15 20 15 0.45 0.45 0.45 0.62 0.60 0.65 1.5 1.5 1.5 (di/dt)c 8.0 10 − A/ms dv/dt 25 75 − V/ms mA mA VGT Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) V mA V DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (VD = 400V, ITM = 3.5A, Commutating dv/dt = 10Vm/sec, Gate Open, TJ = 110°C, f= 500Hz, Snubber: CS = 0.01 mF, RS =15W, see Figure 15) Critical Rate of Rise of Off-State Voltage (VD = Rate VDRM, Exponential Waveform, RGK = 510W, TJ = 110°C) 2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 MAC15SD, MAC15SM, MAC15SN Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VTM VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current on state IH IRRM at VRRM off state IH Quadrant 3 MainTerminal 2 − VTM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 (−) IGT GATE Quadrant I (+) IGT GATE MT1 MT1 REF REF IGT − + IGT (−) MT2 (−) MT2 Quadrant III Quadrant 1 MainTerminal 2 + Quadrant IV (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF − MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 + Voltage IDRM at VDRM 110 100 a = 30 and 60° 90 a a 80 a = CONDUCTION ANGLE 120° 70 180° 60 0 2 4 6 8 10 12 IT(RMS), RMS ON−STATE CURRENT (AMPS) 14 DC 16 P(AV), AVERAGE POWER DISSIPATION (WATTS) T C , MAXIMUM ALLOWABLE CASE TEMPERATURE (°C) MAC15SD, MAC15SM, MAC15SN 25 DC a a 20 60° 10 a = 30° 5 0 0 0.1 0.5 Maximum @ TJ = 110°C 1 1.5 2 2.5 3 3.5 4 VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) 4.5 R(t) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) I T, INSTANTANOUS ON-STATE CURRENT (AMPS) Maximum @ TJ = 25 °C 1 2 16 ZqJC(t) = RqJC(t) r(t) 0.1 0.01 0.1 1 10 100 t, TIME (ms) 1@10 4 1000 Figure 4. Transient Thermal Response 7 9 6 8 I L , LATCHING CURRENT (mA) I H , HOLDING CURRENT (mA) 14 1 Figure 3. On−State Characteristics 5 MT2 NEGATIVE 4 3 MT2 POSITIVE 2 1 −40 4 6 8 10 12 IT(RMS), RMS ON−STATE CURRENT (AMPS) Figure 2. Maximum On−State Power Dissipation Typical @ TJ = 25 °C 10 90° a = CONDUCTION ANGLE 15 Figure 1. RMS Current Derating 100 180° 120° 7 Q1 6 5 Q3 4 3 −25 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 2 −40 110 Figure 5. Typical Holding Current Versus Junction Temperature −25 −10 5 20 35 50 65 TJ, JUNCTION TEMPERATURE (°C) 80 95 Figure 6. Typical Latching Current Versus Junction Temperature http://onsemi.com 4 110 MAC15SD, MAC15SM, MAC15SN 0.9 V GT, GATE TRIGGER VOLTAGE (VOLTS) IGT, GATE TRIGGER CURRENT (mA) 7 6 5 Q3 4 3 Q2 2 Q1 1 0 −40 −25 −10 5 20 35 50 65 TJ, JUNCTION TEMPERATURE (°C) 80 95 0.8 0.7 Q3 0.6 Q1 0.5 Q2 0.4 0.3 −40 110 −25 Figure 7. Typical Gate Trigger Current Versus Junction Temperature 80 95 110 Figure 8. Typical Gate Trigger Voltage Versus Junction Temperature 110 140 TJ = 110°C VPK = 400V TJ = 100°C 100 STATIC dv/dt (V/mS) 120 STATIC dv/dt (V/mS) −10 5 20 35 50 65 TJ, JUNCTION TEMPERATURE (°C) 600V 100 800V 90 110°C 80 70 80 120°C 60 RG − MT1 = 510W 60 100 200 300 400 500 600 700 800 RGK, GATE−MT1 RESISTANCE (OHMS) 900 1000 50 400 Figure 9. Typical Exponential Static dv/dt Versus Gate−MT1 Resistance, MT2(+) 100 160 VPK = 400V STATIC dv/dt (V/mS) STATIC dv/dt (V/mS) 180 80 600V 70 800V 60 RG − MT1 = 510W 110 115 TJ, Junction Temperature (°C) 700 750 800 TJ = 100°C 140 120 110°C 100 80 120°C RG − MT1 = 510W 40 105 550 600 650 VPK, Peak Voltage (Volts) 60 50 40 100 500 Figure 10. Typical Exponential Static dv/dt Versus Peak Voltage, MT2(+) 110 90 450 120 20 125 Figure 11. Typical Exponential Static dv/dt Versus Junction Temperature, MT2(+) 400 450 500 550 600 650 VPK, Peak Voltage (Volts) 700 750 Figure 12. Typical Exponential Static dv/dt Versus Peak Voltage, MT2(*) http://onsemi.com 5 800 (dv/dt)c , CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/m s) MAC15SD, MAC15SM, MAC15SN 200 100 600V VPK = 400V 100 800V 50 RG − MT1 = 510W 0 100 105 110 115 TJ, Junction Temperature (°C) 120 125 Figure 13. Typical Exponential Static dv/dt Versus Junction Temperature, MT2(*) 90°C 10 100°C f= 1 2 tw tw (di/dt)c = VDRM 6f ITM 1000 1 5 10 15 20 25 (di/dt)c, CRITICAL RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) Figure 14. Critical Rate of Rise of Commutating Voltage CHARGE 1N4007 MEASURE I TRIGGER CHARGE CONTROL NON-POLAR CL 110°C 1 LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC TRIGGER CONTROL STATIC dv/dt (V/mS) 150 RS − CS MT2 1N914 51 W ADJUST FOR + di/dt(c) 200 V MT1 G Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information. Figure 15. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c http://onsemi.com 6 MAC15SD, MAC15SM, MAC15SN PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AA −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 4: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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