Pb Free Plating Product ISSUED DATE :2005/06/28 REVISED DATE : GI20N03 BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 30V 52m 20A Description The GI20N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-251) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. Features *Dynamic dv/dt Rating *Repetitive Avalanche Rated *Simple Drive Requirement *Fast Switching Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current, VGS@10V ID @TC=25 20 A Continuous Drain Current, VGS@10V ID @TC=100 13 A 53 A 31 W Pulsed Drain Current 1 IDM Total Power Dissipation PD @TC=25 Linear Derating Factor 0.25 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Symbol Value W/ Thermal Data Parameter Unit Thermal Resistance Junction-case Max. Rthj-c 4.0 /W Thermal Resistance Junction-ambient Max. Rthj-a 110 /W GI20N03 Page: 1/5 ISSUED DATE :2005/06/28 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 30 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.037 - Gate Threshold Voltage VGS(th) 1.0 - 3.0 V VDS=VGS, ID=250uA gfs - 3 - S VDS=10V, ID=10A IGSS - - ±100 nA VGS= ±20V - - 1 uA VDS=30V, VGS=0 - - 100 uA VDS=24V, VGS=0 - - 52 - - 85 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) Static Drain-Source On-Resistance IDSS RDS(ON) V/ m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VGS=10V, ID=10A VGS=4.5V, ID=8A Total Gate Charge2 Qg - 6.1 - Gate-Source Charge Qgs - 1.4 - Gate-Drain (“Miller”) Change Qgd - 4 - Td(on) - 4.9 - Tr - 29 - Td(off) - 14.3 - Tf - 3.6 - Input Capacitance Ciss - 290 - Output Capacitance Coss - 160 - Reverse Transfer Capacitance Crss - 45 - Symbol Min. Typ. Max. Unit VSD - - 1.3 V IS=20A, VGS=0V, Tj=25 IS - - 20 A VD=VG=0V, VS=1.3V ISM - - 53 A Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time nC ID=10A VDS=24V VGS=5V ns VDS=15V ID=20A VGS=10V RG=3.3 RD=0.75 pF VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Test Conditions Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%. GI20N03 Page: 2/5 ISSUED DATE :2005/06/28 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Maximum Drain Current v.s. Case Temperature Fig 6. Type Power Dissipation GI20N03 Page: 3/5 ISSUED DATE :2005/06/28 REVISED DATE : Fig 7. Maximum Safe Operating Area Fig 9. Gate Charge Characteristics Fig 11. Forward Characteristics of Reverse Diode GI20N03 Fig 8. Effective Transient Thermal Impedance Fig 10. Typical Capacitance Characteristics Fig 12. Gate Threshold Voltage v.s. Junction Temperature Page: 4/5 ISSUED DATE :2005/06/28 REVISED DATE : Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GI20N03 Page: 5/5