UTC MJE13005G-X-TMS-T Npn silicon power transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MJE13005-Q
NPN SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTORS

DESCRIPTION
These devices are designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical.
They are particularly suited for 115 and 220 V SWITCHMODE.

FEATURES
* VCEO(SUS)= 400 V
* Reverse bias SOA with inductive loads @ TC = 100°С
* Inductive switching matrix 2 to 4 Amp, 25 and 100°С
tC @ 3A, 100°С is 180 ns (Typ)
* 700V blocking capability
* SOA and switching applications information

APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/Relay drivers
* Deflection circuits

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MJE13005L-x-T60-K
MJE13005G-x-T60-K
MJE13005L-x-TA3-T
MJE13005G-x-TA3-T
MJE13005L-x-TMS-T
MJE13005G-x-TMS-T
Note: Pin Assignment: B: Base C: Collector
E: Emitter
MJE13005L-x-TA3-T
(1)Packing Type
(2)Package Type

Package
TO-126
TO-220
TO-251S
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
Packing
Bulk
Tube
Tube
(1) T: Tube, K: Bulk, R: Tape Reel
(2) TA3: TO-220, TMS: TO-251S, T60: TO-126
(3)Rank
(3) x: refer to Classification of hFE1
(4)Green Package
(4) L: Lead Free, G: Halogen Free and Lead Free
MARKING
TO-220 / TO-251S
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
TO-126
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
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage (VBE=0)
Collector-Base Voltage
Emitter Base Voltage
RATINGS
UNIT
400
V
700
V
700
V
9
V
Continuous
4
A
Collector Current
Peak (1)
8
A
Continuous
2
A
Base Current
Peak (1)
4
A
Continuous
6
A
Emitter Current
Peak (1)
12
A
40
TO-126
W
Power Dissipation at TA=25°С
TO-251S
50
TO-220
75
PD
TO-126
320
Derate above 25°С
TO-251S
400
mW/°С
TO-220
600
Operating and Storage Junction Temperature
TJ , TSTG
-65 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VCEO(SUS)
VCES
VCBO
VEBO
IC
ICM
IB
IBM
IE
IEM
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
TO-126
TO-251S
TO-220
TO-126
TO-251S
TO-220
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
θJC
RATINGS
89
110
62.5
3.125
2.5
1.67
UNIT
°С/W
°С/W
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
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (TC=25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS (Note 1)
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
SECOND BREAKDOWN
Second Breakdown Collector Current
with bass forward biased
Clamped Inductive SOA with Base
Reverse Biased
ON CHARACTERISTICS (Note 1)
SYMBOL
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
MIN
VCEO(SUS) IC=10mA , IB=0
VCBO=Rated Value,
VBE(OFF)=1.5V
ICBO
VCBO=Rated Value,
VBE(OFF)=1.5V, TC=100°С
IEBO
VEB=9V, IC=0
MAX
UNIT
400
V
1
mA
5
1
mA
See Fig. 11
RBSOA
See Fig. 12
VCE(SAT)
VBE (SAT)
IC=0.5A, VCE=5V
IC=1A, VCE=5V
IC=2A, VCE=5V
IC=1A, IB=0.2A
IC=2A, IB=0.5A
IC=4A, IB=1A
IC=2A, IB=0.5A, Ta=100°С
IC=1A, IB=0.2A
IC=2A, IB=0.5A
IC=2A, IB=0.5A, TC=100°С
15
10
8
0.12
0.18
0.7
0.85
0.92
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
fT
IC=500mA, VCE=10V, f=1MHz
Output Capacitance
COB
VCB=10V, IE=0, f=0.1MHz
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
tD
Rise Time
tR
VCC=125V, IC=2A, IB1=IB2=0.4A,
tP=25μs, Duty Cycle≤1%
Storage Time
tS
Fall Time
tF
Note: 1. Pulse Test: Pulse Width=5ms, Duty Cycle≤10%
Note: 2. Pulse Test: PW=300μs, Duty Cycle≤2%

TYP
IS/B
hFE1
hFE2
hFE3
DC Current Gain
TEST CONDITIONS
50
60
40
0.5
0.6
1
1
1.2
1.6
1.5
4
MHz
pF
65
0.025
0.3
0.4
V
V
V
V
V
V
V
0.1
0.7
6
0.9
μs
μs
μs
μs
CLASSIFICATION OF hFE1
RANK
RANGE
A
15 ~ 20
B
20 ~ 25
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
C
25 ~ 30
D
30 ~ 40
E
40 ~ 50
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APPLICATION INFORMATION

Table 1.Test Conditions for Dynamic Performance
Resistive
Switching
Reverse Bias Safe Operating Area and Inductive Switching
+5V
Vcc
33
1N4933
MJE210
L
Test Circuits
0.001μF
33 1N4933
5V
Pw
DUTY CYCLE≦10%
tr, tf≦10ns
2N2222
1k
68
1N4933
IB
1k
Rc
5.1k
T.U.T.
*SELECTED FOR≧1kV
VCE
51
RB
SCOPE
D1
MJE200
47
100
1/2W
Coil Data :
VCC=20V
FERROXCUBE core #6656
Full Bobbin ( ~ 16 Turns) #16
TUT
-4.0V
2N2905
Note:
PW and Vcc Adjusted for Desired Ic
RB Adjusted for Desired IB1
+125V
Vclamp
Ic
RB
1k
+5V
0.02μF 270
Circuit Values
MR826*
-VBE(off)
GAP for 200μH/20 A
LCOIL=200μH
VCLAMP=300V
VCC=125V
RC=62Ω
D1=1n5820 or
Equiv.
RB=22Ω
OUTPUT WAVEFORMS
Test Waveforms
tF CLAMPED
IC
tF UNCLAMPED
IC(PK)
t1 Adjusted to
Obtain Ic
t
t1
VCE
tf
VCE or
VCLAMP
TIME
t2
t2
t
t1=
LCOIL(ICPK)
VCC
t2=
LCOIL(ICPK)
VCLAMP
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Test Equipment
Scope-Tektronics
475 or Equivalent
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RESISTIVE SWITCHING PERFORMANCE
Collector Current, IC (A)
Collector Current, IC(PK) (A)
Transient Thermal Resistance, r(t)
(Normalized)
Time, t (μS)
Time, t (μS)

NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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NPN SILICON TRANSISTOR
RESISTIVE SWITCHING PERFORMANCE(Cont.)

Fig. 6 Forward Bias Power Derating
1
SECOND BREAKDOWN
DERATING
0.8
0.6
THERMAL
DERATING
0.4
0.2
0
20
40
60
80
100
120
140
160
Case Temperature, TC (°С)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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