EPIGAP EPD-740-5-0.9 Photodiode Datasheet

Photodiode
EPD-740-5-0.9
6/28/2007
Preliminary
rev. 02/07
Wavelength
Type
Technology
Case
Infrared
water clear
AlGaAs/GaAs
5 mm plastic lens
Description
Selective photodiode mounted in standard 5 mm
package without standoff. Narrow response
range (740 nm peak) by means of integrated filter
9 - 0,5
5,3 - 0,3
2,54
2 - 1,0
0,8 - 0,4
6 - 0,3
1,1 - 0,1
Anode
0,6 - 0,2
31,8 - 1,7
Note: Special packages with standoff available on request
Applications
Optical communications, safety equipment, light
barriers
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Test сonditions
Parameter
Symbol
Value
Unit
A
0.62
mm²
Temperature coefficient of ID
TC(ID)
5
%/K
Operating temperature range
Tamb
-20 to +85
°C
Storage temperature range
Tstg
-40 to +125
°C
Tsld
260
°C
ϕ
20
deg.
Typ
Max
Unit
Active area
t ≤ 3 s, 3 mm from case
Soldering Temperature
Acceptance angle at 50% Sλ
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test conditions
Symbol
Min
IR = 10 µA
VR
5
Dark current
VR = 5 V
ID
40
Peak sensitivity wavelength
VR = 0 V
λp
740
nm
Responsivity at λP
VR = 0 V
Sλ
0.5
A/W
Spectral range at 10 %
VR = 0 V
λ0.5
Spectral bandwidth at 50%
VR = 0 V
∆λ0.4
80
Shunt resistance
VR = 10 mV
RSH
300
Noise equivalent power
λ = 740 nm
NEP
Specific detectivity
λ = 740 nm
D*
1.1x1013
cm ⋅ Hz ⋅ W −1
Junction capacitance
VR = 0 V
CJ
120
pF
Switching time (RL = 50 Ω)
VR = 5 V
tr , tf
170
ns
VR = 0 V
Ee = 1mW/cm²
IPh
15
µA
Breakdown voltage1)
Photo-current at λP 2)
1)
2)
V
200
680
770
7.2x10
pA
nm
nm
GΩ
-15
W/ Hz
for information only
Halogen lamp source with appropriate filter
Note: All measurements carried out with EPIGAP equipment
Labeling
Type
Lot N°
RD (typ.) [GΩ]
Quantity
EPD-740-5-0.9
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
1 of 2
Photodiode
EPD-740-5-0.9
6/28/2007
Preliminary
Short-circuit current vs. ambient temperature
Typical responsivity spectrum
1,0
1,04
0,8
Short-circuit current (arb. units)
rel. Responsivity (arb. units)
rev. 02/07
0,6
0,4
1,00
0,96
0,2
0,0
600
650
700
750
800
0,92
-40
850
-20
0
Wavelength (nm)
Dark Current vs. Temperature
20
40
Ambient temperature [°C]
60
Short-circuit current vs. irradiance (typical)
100
2)
3
10
UR = 5V
TK = 1,05 times/K
2
Short-circuit current (nA)
Dark Current (pA)
10
1
10
1
10
0
10
-1
10
0,1
-2
10
-40
-20
0
20
40
Temperature (°C)
60
80
100
120
-2
10
-1
10
0
10
2
Irradiance [mW/cm ]
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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10
2
10
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