FDMA430NZ tm Single N-Channel 2.5V Specified PowerTrench® MOSFET 30V, 5.0A, 40mΩ General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe. RDS(on) = 40mΩ @ VGS = 4.5 V, ID = 5.0A RDS(on) = 50mΩ @ VGS = 2.5 V, ID = 4.5A Applications Low Profile-0.8mm maximum-in the new package MicroFET 2x2 mm Li-lon Battery Pack RoHS Compliant Pin 1 D D G Drain Source D D S 4 3 G D 5 2 D D 6 1 D Bottom Drain Contact S MicroFET 2X2 (Bottom View) Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS Drain-Source Voltage Ratings 30 Units V VGSS Gate-Source Voltage ±12 V Drain Current 5.0 ID Parameter -Continuous -Pulsed (Note 1a) Power dissipation (Steady State) PD TJ, TSTG A 20 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range 0.9 W 2.4 o -55 to +150 C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 145 RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 52 o C/W Package Marking and Ordering Information Device Marking 430 Device FDMA430NZ ©2006 Fairchild Semiconductor Corporation FDMA430NZ Rev B1 Reel Size 7” 1 Tape Width 12mm Quantity 3000 units www.fairchildsemi.com FDMA430NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET September 2006 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V , ID = 250µA ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C 30 V IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V, 1 µA IGSS Gate-Body Leakage, VGS = ±12V, VDS = 0V ±10 µA 1.5 V 25.2 mV/°C On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -3.2 VGS = 4.5V, ID = 5.0A 23.6 40 VGS = 4.0V, ID = 5.0A 23.9 41 VGS = 3.1V, ID =4.5A 25.4 43 VGS = 2.5V, ID =4.5A 27.6 50 VGS = 4.5V, ID =5.0A, TJ =150°C 37.0 61 VDS = 5V, ID =5.0A 25.6 VDS = 10V, VGS =0V, f = 1.0MHz 600 800 pF 110 150 pF 75 115 pF RDS(ON) gFS Static Drain-Source On-Resistance Forward Transconductance 0.6 0.81 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance f = 1.0MHz Ω 3.5 Switching Characteristics (Note 2) td(on) Turn-On Delay Time tr Turn-On Rise Time 8.3 17 ns 7.1 15 td(off) Turn-Off Delay Time ns 18.1 37 tf ns Turn-Off Fall Time 6.0 12 ns Qg Total Gate Charge 7.3 11 nC Qgs Gate-Source Charge 0.8 2 nC Qgd Gate-Drain Charge 1.9 3 nC 2.0 A VDD = 10V, ID = 1A VGS = 4.5V, RGEN = 6Ω VDS = 10V, ID = 5.0A, VGS = 4.5V Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 2.0A trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge IF = 5.0A, di/dt = 100A/µs 0.69 1.2 V 17 ns 5 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. a. 145°C/W when mounted on a minimum pad of 2 oz copper b. 52°C/W when mounted on a 1 in2 pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 3. The diode connected between the gate and the source serves only as proection against ESD. No gate overvoltage rating is implied. FDMA430NZ Rev B1 2 www.fairchildsemi.com FDMA430NZ Single N-Channel 2.5V specified PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 1.8 NORMOLIZED DRAIN to SOURCE ON-RESISTANCE 40 ID, DRAIN CURRENT(A) VGS = 4.5V VGS = 2.5V 30 VGS = 3.0V PULSE DURATION=300µS DUTY CYCLE=2.0% MAX 20 VGS = 2.0V 10 VGS = 1.5V 0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE(V) 4 VGS= 2.0V 1.5 2.5V 1.4 3.0V 1.3 3.5V 1.2 1.1 4.5V 1.0 0.9 0.8 5 1.6 15 20 25 30 35 40 0.08 ID = 5.0A VGS = 4.5V 1.2 1.0 0.8 0.6 -80 -40 0 40 80 O 120 ID = 2.5A 0.06 0.05 TJ = 125oC 0.04 0.03 0.02 1 160 PULSE DURATION = 300µs DUTY CYCLE = 2.0% MAX 0.07 TJ = 25oC 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) TJ,JUNCTION TEMPERATURE( C) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Votlage 100 30 PULSE DURATION = 300µs DUTY CYCLE = 2.0% MAX 25 IS, REVERSE CURRENT(A) ID, DRAIN CURRENT (A) 10 Figure 2. On-Resistance vs Drain Current and Gate Voltage RDS(on), DRAIN TO SOURCE ON-RESISTANCE (OHM) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 ID, DRAIN CURRENT(A) Figure 1. On Region Characteristics 1.4 1.7 VDS = 5V 20 15 10 o TJ = 25 C o TJ = 125 C 5 10 VGS = 0V 1 0.1 o TJ = 125 C o TJ = 25 C 0.01 o TJ = -55 C 1E-3 TJ = -55oC 0 0.5 1.0 1.5 2.0 1E-4 0.0 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics FDMA430NZ Rev B1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWAD VOLTAGE(V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMA430NZ Single N-Channel 2.5V specified PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted ID =5.0A Ciss 4 CAPACITANCE(PF) VGS,GATE-SOURCE VOLTAGE(V) 1000 5 VDS = 15V 3 VDS = 10V 2 100 VDS = 20V 1 0 0 2 4 6 8 Qg,GATE CHARGE (nC) f = 1MHZ VGS = 0V 1 10 VDS,DRAIN TO SOURCE VOLTAGE(V) 30 Figure 8. Capacitance vs Drain to Source Voltage 100 5 10us 10 ID, DRAIN CUREENT(A) ID, DRAIN CURRENT (A) Crss 10 0.1 10 Figure 7. Gate Charge Characteristics 100us 1ms 1 0.1 Coss 10ms OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) 100ms 1s 10s SINGLE PULSE TJ=MAX RATED TA=25oC 0.01 0.1 4 VGS=4.5V 3 VGS=2.5V 2 1 DC 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 25 50 Figure 9. Safe Operating Area R θJA=145OC/W 50 75 100 125 TA, AMBIENT TEMPERATURE(OC) 150 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature P(PK), PEAK TRANSIENT POWER (W) 200 100 VGS = 10V TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 10 I= I SINGLE PULSE 150 – T 25 A -------------------125 1 0.5 -4 10 -3 10 -2 10 -1 10 t, PULSE WIDTH (s) 0 10 1 10 2 10 3 10 Figure 11. Single Pulse Maximum Power Dissipation FDMA430NZ Rev B1 4 www.fairchildsemi.com FDMA430NZ Single N-Channel 2.5V specified PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 Normalized Thermal Impedance, ZθJA 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA RθJA = 145oC SINGLE PULSE 0.01 -4 10 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION(s) Figure 12. Transient Thermal Response Curve FDMA430NZ Rev B1 5 www.fairchildsemi.com FDMA430NZ Single N-Channel 2.5V specified PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMA430NZ Single N-Channel 2.5V specified PowerTrench® MOSFET NOTES: A. NOT FULLY CONFORM TO JEDEC REGISTRATION MO-229 DATED AUG/2003. B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M,1994 MLP06LrevA FDMA430NZ Rev B1 6 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 FDMA430NZ Rev B1 7 www.fairchildsemi.com FDMA420NZ Single N-Channel 2.5V specified PowerTrench® MOSFET TRADEMARKS