Renesas CT75AM-12 General inverter â ¢ ups use Datasheet

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April 1st, 2010
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MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT75AM-12
GENERAL INVERTER • UPS USE
CT75AM-12
OUTLINE DRAWING
Dimensions in mm
5
20MAX.
6
2
φ 3.2
2.5
1
26
4
20.6MIN.
2
1
2
1
3
0.5
3
5.45 5.45
4.0
wr
¡VCES ............................................................................... 600V
¡IC ......................................................................................... 75A
¡High Speed Switching
¡Low VCE Saturation Voltage
q
e
q GATE
w COLLECTOR
e EMITTER
r COLLECTOR
TO-3PL
APPLICATION
AC & DC motor controls, General purpose inverters, UPS, Power supply switching, Servo controls,
etc.
MAXIMUM RATINGS
Symbol
VCES
VGES
VGEM
IC
ICM
PC
Tj
Tstg
—
(Tc = 25°C)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Conditions
600
±20
Unit
V
V
VCE = 0V
±30
75
150
300
–40 ~ +150
V
A
A
W
°C
–40 ~ +150
9.8
°C
g
Collector current
Collector current (Pulsed)
Maximum power dissipation
Junction temperature
Storage temperature
Weight
Ratings
VGE = 0V
VCE = 0V
Typical value
Feb.1999
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT75AM-12
GENERAL INVERTER • UPS USE
ELECTRICAL CHARACTERISTICS
(Tj = 25°C)
Symbol
Parameter
V (BR) CES
Collector-emitter breakdown voltage
Collector-emitter leakage current
IC = 1mA, VGE = 0V
VGE = ±30V, VCE = 0V
Gate-emitter leakage current
Gate-emitter threshold voltage
VCE = 600V, VGE = 0V
IC = 7.5mA, VCE = 10V
IC = 75A, VGE = 15V
Limits
Test conditions
Unit
Min.
600
—
—
Typ.
—
—
—
Max.
—
±0.5
1
VCE = 25V, VGE = 0V, f = 1MHz
4.5
—
—
—
6.0
2.5
3100
400
7.5
3.0
—
—
V
V
pF
pF
td (off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VCC = 300V, Resistance load,
IC = 75A, VGE = 15V, RGE = 10Ω
—
—
—
—
130
40
265
175
—
—
—
—
pF
ns
ns
ns
Rth (j-c)
Thermal resistance
Junction to case
—
—
245
—
—
0.42
ns
°C/W
IGES
ICES
VGE(th)
VCE(sat)
Cies
Coes
Cres
td (on)
tr
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
V
µA
mA
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
VGE = 20V
COLLECTOR CURRENT IC (A)
100
15V
Tj = 25°C
12V
80
PC = 300W
60
11V
40
10V
20
9V
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6
150A
4
75A
2
30A
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE VGE (V)
Feb.1999
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT75AM-12
GENERAL INVERTER • UPS USE
5
VGE = 15V
Tj = 25°C
4
3
2
1
0
0
20
40
60
80
COLLECTOR CURRENT VS.
GATE EMITTER VOLTAGE CHARACTERISTIC
(TYPICAL)
100
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
VCE = 10V
Tj = 25°C
80
60
40
20
0
100
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE CHARACTERISTIC
(TYPICAL)
104
7
5
Cies
3
2
103
7
5
3
2
Coes
102
7
5
3 Tj = 25°C
2 VGE = 0V
101
Cres
tf
tr
102
7
5
16
300V
12
8
4
160
GATE CHARGE Qg (nc)
200
td(off)
td(on)
3
Tj = 25°C
VCC = 300V
VGE = 15V
RG = 10Ω
2 3
5 7 101
2 3
5 7 102
COLLECTOR CURRENT IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(TYPICAL)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
100
TRANSIENT
THERMAL IMPEDANCE Zth ( j – c)
GATE-EMITTER VOLTAGE VGE (V)
VCE = 200V
120
20
2
101 0
10
GATE-EMITTER VOLTAGE
VS. GATE CHARGE CHARACTERISTIC
(TYPICAL)
20
80
16
3
2
f = 1MHZ
40
12
103
7
5
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
0
8
SWITCHING TIME-COLLECTOR
CURRENT CHARACTERISTIC
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE VCE (V)
0
4
GATE-EMITTER VOLTAGE VGE (V)
SWITCHING TIME (ns)
CAPACITANCE Cies, Coes, Cres (pF)
COLLECTOR CURRENT IC (A)
0
7
5
3
2
10–1
7
5
7
5
3
2
3
2
10–2
10–2
7
5
7
5
3
2
3
2
10–3
10–3
10–5 2 3 5 710–4 2 3 5 710–3
PULSE WIDTH tw (s)
Feb.1999
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