JIEJIE MICROELECTRONICS CO. , Ltd JST130 Series 0.8A TRIACs Re v.4.0 DESCRIPTION: 2 JST130 series triacs with low holding and latching current are especially recommended 1 for use on middle and small resistance type power load. 1 3 2 3 SOT-223 SOT-23-3L T1(1) G(3) MAIN FEATURES Symbol Value Unit IT(RMS) 0.8 A VTM 1.5 V 1 3 2 TO-92 T2(2) ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Tstg -40 - 150 ℃ Tj -40 - 125 ℃ Repetitive peak off-state voltage (Tj =25℃) VDRM 600/700 V Repetitive peak reverse voltage (Tj =25℃) VRRM 600/700 V Non repetitive surge peak Off-state voltage VDSM VDRM+100 V Non repetitive peak reverse voltage VRSM VRRM+100 V IT(RMS) 0.8 A ITSM 9 A I2 t 0.4 A2s Storage junction temperature range Operating junction temperature range TO-92 (TC=50℃) RMS on-state current SOT-223 (TC=65℃) SOT-23-3L (TC=60℃) Non repetitive surge peak on-state current (full cycle, F=50Hz) I2 t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG =2×IGT) Ⅰ-Ⅱ-Ⅲ Ⅳ Peak gate current Average gate power dissipation TEL：+86-513-83639777 - 1 / 5- 50 dI/dt A/μs 10 IGM 1 A PG(AV) 0.1 W http://www.jjwdz.com JST130 Series JieJie Microelectronics CO. , Ltd Peak gate power PGM 1 W ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Value Symbol Test Condition Quadrant Unit Ⅰ-Ⅱ-Ⅲ IGT Ⅳ VD=12V VGT VGD VD=VDRM Tj=125℃ RL=3.3KΩ IH dV/dt IG=1.2IGT T 5 5 10 5 MAX mA ALL MAX 1.3 V ALL MIN 0.2 V Ⅰ-Ⅲ-Ⅳ IL D Ⅱ 10 5 20 15 MAX mA IT=100mA MAX 7 5 mA VD=2/3VDRM Gate Open Tj=125℃ MIN 30 5 V/μs STATIC CHARACTERISTICS Symbol VTM IDRM IRRM Parameter ITM=1.1A tp=380μs VD=VDRM V R=VRRM Value(MAX) Unit Tj=25℃ 1.5 V Tj=25℃ 5 μA Tj=125℃ 100 μA Value Unit THERMAL RESISTANCES Symbol Rth(j-c) Parameter junction to case(AC) TEL：+86-513-83639777 TO-92 75 SOT-223 45 SOT-23-3L 50 - 2 / 5- ℃/W http://www.jjwdz.com JST130 Series JieJie Microelectronics CO. , Ltd ORDERING INFORMATION J ST 130 U -600 D T:IGT1-4≤5mA D:IGT1-3≤5mA IGT4≤10mA 600:VDRM /VRRM≥600V 800:VDRM /VRRM≥800V JieJie Microelectronics Co.,Ltd TRIACs L:SOT-23-3L U:TO-92 V:SOT-223 IT(RMS):0.8A PACKAGE MECHANICAL DATA N N C Dimensions Ref. Min. F V A M 5m 1. ax m K P H B Φ E Millimeters J D G TO-92 TEL：+86-513-83639777 - 3 / 5- Typ. Inches Max. Min. Typ. Max. A 4.45 5.20 0.175 0.205 B 4.32 5.33 0.170 0.210 C 3.18 4.19 0.125 0.165 D 0.407 0.533 0.016 0.021 E 0.60 0.80 0.024 F - 1.1 - - 0.043 - G - 1.27 - - 0.050 - H - 2.30 - - 0.091 J 0.36 0.50 0.014 K 12.70 15.0 0.500 0.591 N 2.04 2.66 0.080 0.105 P 1.86 2.06 0.073 0.081 V - 4.3 - 0.169 0.031 0.020 http://www.jjwdz.com JST130 Series JieJie Microelectronics CO. , Ltd PACKAGE MECHANICAL DATA Dimensions G Ref. Millimeters H Min. A E A F C B FIG.1: Maximum power dissipation versus RMS on-state current 2.65 Typ. Min. 2.95 0.104 0.115 C 1.90 0.075 0.34 0.36 0.013 0.014 E 1.60 0.063 F 1.17 0.046 G 0.15 0.006 0.25 Max. 0.116 2.92 H SOT-23-3L Max. B D D Typ. Inches 0.55 0.010 0.022 FIG.2: RMS on-state current versus case temperature P(w) 1.2 IT(RMS) (A) 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 α=180° SOT-23-3L SOT-223 0 TO-92 0 IT(RMS) (A) 0.4 0.6 0.2 0.8 1.0 FIG.3: Surge peak on-state current versus number of cycles Tc (℃) 0 0 25 50 75 100 125 FIG.4: On-state characteristics (maximum values) ITM (A) ITSM (A) 10 10.5 t=20ms One cycle 9 Tj=Tjmax 7.5 6 1 4.5 3 Tj=25℃ 1.5 0 1 10 Number of cycles 100 TEL：+86-513-83639777 1000 - 4 / 5- 0.1 0 1 2 VTM (V) 3 4 5 http://www.jjwdz.com JST130 Series JieJie Microelectronics CO. , Ltd FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<20ms (Ⅰ-Ⅱ-Ⅲ:dI/dt < 50A/μs; Ⅳ:dI/dt < 10A/μs) ITSM (A) 300 FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃) 3.5 3.0 dI/dt(Ⅰ-Ⅱ-Ⅲ) 100 2.5 IGT 2.0 ITSM dI/dt(Ⅳ) 1.5 10 IH&IL 1.0 0.5 1 0.01 tp(ms) 0.1 1 10 20 0.0 -40 Tj(℃) -20 0 20 40 60 80 100 120 140 Information furnished in this document is believed to be accurate and reliable. However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu JieJie complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. This document is the fourth version which is made in 28-Mar.-2015. This document supersedes and replaces all information previously supplied. is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd. Copyright © 2014 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved. TEL：+86-513-83639777 - 5 / 5- http://www.jjwdz.com