Infineon AUIRGDC0250 Low vce (on) planar igbt technology Datasheet

AUTOMOTIVE GRADE
Features
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AUIRGDC0250
C
Low VCE (on) Planar IGBT Technology
VCES = 1200V
Low Switching Losses
Square RBSOA
100% of The Parts Tested for ILM
Positive VCE (on) Temperature Coefficient
Reflow Capable per JDSD22-A113
Lead-Free, RoHS Compliant
Automotive Qualified *
IC = 81A @ TC = 100°C
G
VCE(on) typ. = 1.37V @ 33A
E
n-channel
Benefits
Device optimized for soft switching applications
 High Efficiency due to Low VCE(on), low switching losses
 Rugged transient performance for increased reliability
 Excellent current sharing in parallel operation
 Low EMI

Super-TO-220
AUIRGDC0250
Application

G
Gate
PTC Heater
 Relay Replacement
Base Part Number
Package Type
AUIRGDC0250
Super-TO-220
Standard Pack
Form
Quantity
Tube
50
C
Collector
E
Emitter
Orderable Part Number
AUIRGDC0250
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V 
Clamped Inductive Load Current, VGE = 20V 
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
TSTG
Storage Temperature Range
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
Max.
1200
141
81
99
99
±20
±30
543
217
-55 to +150
Units
V
A
V
W
°C
Soldering Temperature, for 10 sec. (Through Hole Mounting) 300 (0.063 in. (1.6mm) from case)
Thermal Resistance
RJC (IGBT)
RCS
RJA
Parameter
Thermal Resistance Junction-to-Case (each IGBT) 
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Typ.
–––
0.50
–––
Max.
0.23
–––
62
Units
°C/W
* Qualification standards can be found at www.infineon.com
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AUIRGDC0250
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Min. Typ. Max.
Parameter
V(BR)CES
Collector-to-Emitter Breakdown Voltage
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
1200
—
—
V
V/°C
—
1.2
—
—
—
3.0
1.37
1.45
—
1.57
—
6.0
VGE(th)/TJ Threshold Voltage temp. coefficient
—
-15
—
gfe
Forward Transconductance
—
30
—
ICES
Collector-to-Emitter Leakage Current
—
—
250
—
—
1000
—
—
±100
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
IGES
Gate-to-Emitter Leakage Current
Units
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
Qg
Total Gate Charge (turn-on)
—
151
227
Gate-to-Emitter Charge (turn-on)
—
26
39
Qge
Gate-to-Collector Charge (turn-on)
—
62
93
Qgc
Eoff
Turn-Off Switching Loss
—
15
16
td(off)
Turn-Off delay time
—
485
616
tf
Fall time
—
1193
1371
Eoff
Turn-Off Switching Loss
—
29
—
td(off)
Turn-Off delay time
—
689
—
tf
Fall time
—
2462
—
Cies
Input Capacitance
—
3804
—
Coes
Output Capacitance
—
161
—
Cres
Reverse Transfer Capacitance
—
31
—
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
V
V
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1mA (25°C-150°C)
IC = 33A, VGE = 15V, TJ = 25°C
IC = 33A, VGE = 15V, TJ = 150°C
VCE = VGE, IC = 250µA
mV/°C VCE = VGE, IC = 250µA (25°C-150°C)
S
µA
nA
Units
nC
mJ
ns
mJ
ns
VCE = 50V, IC = 33A,PW = 20µS
VGE = 0V, VCE = 1200V, TJ = 25°C
VGE = 0V, VCE = 1200V,TJ = 150°C
VGE = ±20V
Conditions
IC = 33A
VGE = 15V
VCC = 600V
IC = 33A, VCC = 600V, VGE = 15V
RG = 5, L = 400µH, TJ = 25°C
Energy losses include tail
IC = 33A, VCC = 600V, VGE = 15V
RG = 5, L = 400µH, TJ = 150°C
Energy losses include tail
VGE = 0V
pF
VCC = 30V
f = 1.0Mhz
TJ = 150°C, IC = 99A
VCC = 960V, Vp ≤ 1200V
Rg = 5, VGE = +20V to 0V
Notes:
 VCC = 80% (VCES), VGE = 20V, L = 400µH, RG = 5.
 Pulse width limited by max. junction temperature.
 Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
 R is measured at TJ approximately 90°C.
 Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A.
Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements
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AUIRGDC0250
160
600
140
500
120
400
Ptot (W)
IC (A)
100
80
60
300
200
40
100
20
0
25
50
75
100
125
0
150
25
50
75
T C (°C)
100
10µsec
10
IC (A)
100µsec
1msec
1
DC
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
10
100
150
Fig. 2 - Power Dissipation vs.
Case Temperature
1000
VGE(th) , Gate Threshold Voltage (Normalized)
1000
1
125
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
0.1
100
5.0
IC = 1mA
4.5
4.0
3.5
3.0
25
10000
50
75
100
125
150
T J , Temperature (°C)
VCE (V)
Fig. 4 - Typical Gate Threshold Voltage
(Normalized) vs. Junction Temperature
Fig. 3 - Forward SOA
TC = 25°C, TJ  150°C; VGE =15V
100
1000
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
80
IC (A)
ICE (A)
100
60
40
10
20
0
1
10
100
1000
VCE (V)
Fig. 5 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
3
10000
0
2
4
6
8
10
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
2018-03-01
AUIRGDC0250
100
100
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
60
80
60
ICE (A)
ICE (A)
80
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
40
40
20
20
0
0
0
2
4
6
8
0
10
2
4
8
10
VCE (V)
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 25°C; tp =20µs
Fig. 8 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 20µs
8
8
7
7
6
6
VCE (V)
ICE = 66A
4
ICE = 17A
ICE = 33A
5
ICE = 17A
ICE = 33A
5
VCE (V)
6
ICE = 66A
4
3
3
2
2
1
1
0
0
5
10
15
5
20
10
15
20
VGE (V)
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
100
8
7
80
6
ICE = 17A
ICE = 33A
ICE = 66A
4
ICE (A)
VCE (V)
5
3
2
60
T J = 25°C
T J = 150°C
40
20
1
0
0
5
10
15
VGE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
4
20
4
5
6
7
8
9
10
11
VGE (V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
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AUIRGDC0250
50
10000
45
35
tF
Swiching Time (ns)
Energy (mJ)
40
EOFF
30
1000
25
20
tdOFF
15
10
0
10
20
30
40
50
60
100
70
0
20
40
IC (A)
32
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 400µH; VCE = 600V, RG = 5; VGE = 15V
10000
tF
Swiching Time (ns)
Energy (mJ)
30
EOFF
28
26
24
0
20
40
60
80
100
1000
tdOFF
100
0
20
40
60
80
100
RG ()
Rg ( )
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 400µH; VCE = 600V, ICE = 33A; VGE = 15V
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 400µH; VCE = 600V, ICE = 33A; VGE = 15V
16
10000
VGE, Gate-to-Emitter Voltage (V)
Cies
1000
Capacitance (pF)
80
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 400µH; VCE = 600V, RG = 5; VGE = 15V
100
Coes
10
Cres
V CES = 600V
14
V CES = 400V
12
10
8
6
4
2
0
1
0
100
200
300
400
500
600
VCE (V)
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
5
60
0
20
40
60
80
100 120 140 160
Q G, Total Gate Charge (nC)
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 33A; L = 2.0mH
2018-03-01
AUIRGDC0250
Thermal Response ( Z thJC )
1
0.1
0.01
0.001
0.0001
1E-006
D = 0.50
0.20
0.10
0.05
0.02
0.01
Ri (°C/W)
J
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
R1
R1
J
1
R2
R2
R3
R3
R4
R4
C
2
1
2
3
4
3
4
Ci= iRi
Ci= iRi
C
I (sec)
0.0015
0.000003
0.0365
0.000118
0.1356
0.001438
0.0554
0.006412
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
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AUIRGDC0250
L
L
VCC
DUT
0
+
-
80 V
DUT
VCC
Rg
1K
RBSOA Circuit
Gate Charge Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
C force
diode clamp /
DUT
100K
L
D1
22K
C sense
DUT /
DRIVER
G force
VCC
DUT
0.0075µF
Rg
E sense
E force
BVCES Filter
Switching Loss
Fig.C.T.3 - Switching Loss Circuit
Fig.C.T.4 - BVCES Filter Circuit
700
70
tf
600
60
500
50
40
90% ICE
ICE (A)
VCE (V)
400
30
300
20
200
5% VCE
100
10
10% ICE
0
0
Eoff Loss
-10
-100
-2
0
2
4
6
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.3
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AUIRGDC0250
Super-TO-220 Package Outline
Dimensions are shown in millimeters (inches)
Super-TO-220 Part Marking Information
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AUIRGDC0250
Qualification Information
Automotive
(per AEC-Q101)
Comments: This part number (s) passed Automotive qualification.
Infineon’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Qualification Level
Moisture Sensitivity Level
3L– Super TO-220
N/A
†
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
†
Class M4 (+/- 800V)
AEC-Q101-002
Class H3A†(+/- 6000V)
AEC-Q101-001
Class C5†(+/- 2000V)
AEC-Q101-005
Yes
Highest passing voltage.
Revision History
Date
Comments
9/2/2014
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12/1/2014
 Updated Bvdss test condition from "100uA" to "250uA" on page 2.
 Updated Vgeth test condition from "1mA" to "250uA" on page 2.
 Updated Vgeth temp coefficient test condition from "1mA" to "250uA" and spec from "-12mV/C" to "15mV/C"on page 2.
3/2/2015
 Removed ICES = 2uA @ VCE = 10V on page 2.
8/31/2017
03/01/2018
9
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Updated datasheet with IR corporate template.
Removed Ic Nominal current on page 1.
Updated package outline on page 9.
Updated typo on switch time test condition from "25C" to "150C" on page 2.
Changed datasheet with Infineon logo - all pages
Corrected qual level from N/A to MSL1 & added temp 245C -page 9.
Updated Part Marking on page 8.
Removed -Mounting Torque, 6-32 or M3 Screw –page1
Corrected Soldering Temperature for 10 sec (Through Hole Mounting)-page1
Corrected Moisture Sensitivity Level from “MSL1” to “N/A”-page9
2018-03-01
AUIRGDC0250
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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