JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC(T MMBT3904 TRANSISTOR (NPN) SOT–23 FEATURES z Complementary to MMBT3906 MARKING:1AM MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10µA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 6 V Collector cut-off current ICEX VCE=30V, VEB(off)=3V 50 nA Collector cut-off current ICBO VCB= 60V, IE=0 100 nA Emitter cut-off current IEBO VEB=5V, IC=0 100 nA hFE(1) VCE=1V, IC=10mA 100 hFE(2) VCE=1V, IC=50mA 60 hFE(3) VCE=1V, IC=100mA 30 Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 0.3 Base-emitter saturation voltage VBE(sat) IC=50mA, IB=5mA 0.95 DC current gain Transition frequency fT Delay time td Rise time tr Storage time ts Fall time tf VCE=20V,IC=10mA, f=100MHz 300 300 V V MHz VCC=3V, VBE(off)=-0.5V IC=10mA, 35 ns 35 ns VCC=3V, IC=10mA, IB1= IB2=1mA 200 ns VCC=3V, IC=10mA, IB1= IB2=1mA 50 ns IB1=1mA VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA CLASSIFICATION OF hFE(1) 100-300 HFE RANK L H RANGE 100–200 200–300 www.cj-elec.com 1 E,May,2015 A,Jun,2014 Typical Characteristics Static Characteristic 400uA DC CURRENT GAIN COLLECTOR CURRENT 350uA 60 300uA 250uA 200uA 40 —— IC COMMON EMITTER VCE=1V COMMON EMITTER Ta=25℃ hFE 80 hFE 400 500uA 450uA IC (mA) 100 150uA Ta=100℃ 300 Ta=25℃ 200 100 100uA 20 IB=50uA 0 0.1 0 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VCEsat —— 1 0.3 IC VBEsat 1.2 30 10 3 COLLECTOR CURRENT (V) IC 100 (mA) IC —— 300 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 600 VCE 20 Ta=100℃ 100 Ta=25℃ 30 Ta=25℃ 0.8 Ta=100℃ 0.4 β=10 β=10 10 0.0 1 10 3 COLLECTOR CURRENT IC 100 100 30 IC 200 1 10 3 (mA) 100 30 COLLECTOR CURRENT —— VBE Cob/ Cib 9 —— IC VCB/ VEB f=1MHz IE=0/IC=0 Ta=25℃ 30 Cib (pF) Ta=100℃ C 10 CAPACITANCE IC (mA) COMMON EMITTER VCE=1V COLLECTOR CURRENT 300 (mA) 3 Ta=25℃ 1 3 Cob 0.3 0.1 0.2 0.6 0.4 0.8 1.0 1 0.1 1.2 fT 300 1 0.3 —— IC PC 250 10 3 REVERSE VOLTAGE BASE-EMITTER VOLTAGE VBE (V) —— V 20 (V) Ta VCE=20V TRANSITION FREQUENCY fT COLLECTOR POWER DISSIPATION PC (mW) (MHz) Ta=25℃ 200 200 150 100 50 0 100 1 3 10 COLLECTOR CURRENT www.cj-elec.com 30 IC 0 60 (mA) 25 50 75 AMBIENT TEMPERATURE 2 125 100 Ta 150 (℃ ) E,May,2015 A,Jun,2014 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.cj-elec.com 3 E,May,2015 SOT-23 Tape and Reel www.cj-elec.com 4 E,May,2015