Samsung ISL9860PF2 8a, 600v stealth diode Datasheet

ISL9R860PF2
8A, 600V Stealth™ Diode
General Description
Features
The ISL9R860PF2 is a Stealth™ diode optimized for
low loss performance in high frequency hard switched
applications. The Stealth™ family exhibits low reverse
recovery current (IRRM) and exceptionally soft recovery
under typical operating conditions.
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . tb / ta > 1.2
• Fast Recovery. . . . . . . . . . . . . . . . . . . . . . . trr < 25ns
This device is intended for use as a free wheeling or
boost diode in power supplies and other power
switching applications. The low IRRM and short ta phase
reduce loss in switching transistors. The soft recovery
minimizes ringing, expanding the range of conditions
under which the diode may be operated without the use
of additional snubber circuitry. Consider using the
Stealth™ diode with an SMPS IGBT to provide the
most efficient and highest power density design at
lower cost.
Formerly developmental type TA49409.
•
•
•
•
Operating Temperature. . . . . . . . . . . . . . . . . . 150oC
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . 600V
Internally Isolated . . . . . . . . . . . . . . . . . . . . . . . . 1kV
Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Package
Symbol
TO-220F
K
A
CATHODE
ANODE
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
VRRM
VRWM
VR
Parameter
Peak Repetitive Reverse Voltage
Ratings
600
Units
V
Working Peak Reverse Voltage
600
V
DC Blocking Voltage
600
V
A
IF(AV)
Average Rectified Forward Current (TC = 75oC)
8
IFRM
Repetitive Peak Surge Current (20kHz Square Wave)
16
A
IFSM
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
100
A
Power Dissipation
26
W
Avalanche Energy (1A, 40mH)
20
mJ
-55 to 150
°C
300
°C
PD
EAVL
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2003 Fairchild Semiconductor Corporation
ISL9R860PF2 Rev. A
ISL9R860PF2
April 2003
Device Marking
R860PF2
Device
ISL9R860PF2
Package
TO-220F
Tape Width
N/A
Quantity
50 Units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
TC = 25°C
-
-
100
µA
TC = 125°C
-
-
1.0
mA
Off State Characteristics
IR
Instantaneous Reverse Current
VR = 600V
On State Characteristics
VF
Instantaneous Forward Voltage
IF = 8A
TC = 25°C
-
2.0
2.4
V
TC = 125°C
-
1.6
2.0
V
VR = 10V, IF = 0A
-
30
-
pF
ns
Dynamic Characteristics
CJ
Junction Capacitance
Switching Characteristics
trr
trr
Reverse Recovery Time
Reverse Recovery Time
IRRM
Maximum Reverse Recovery Current
QRR
Reverse Recovery Charge
trr
Reverse Recovery Time
S
Softness Factor (tb/ta)
IRRM
Maximum Reverse Recovery Current
QRR
Reverse Recovery Charge
trr
Reverse Recovery Time
S
Softness Factor (tb/ta)
IRRM
Maximum Reverse Recovery Current
QRR
Reverse Recovery Charge
dIM/dt
IF = 1A, dIF/dt = 100A/µs, VR = 30V
-
18
25
IF = 8A, dIF/dt = 100A/µs, VR = 30V
-
21
30
ns
IF = 8A,
dIF/dt = 200A/µs,
VR = 390V, TC = 25°C
-
28
-
ns
-
3.2
-
A
-
50
-
nC
ns
IF = 8A,
dIF/dt = 200A/µs,
VR = 390V,
TC = 125°C
-
77
-
-
3.7
-
-
3.4
-
A
-
150
-
nC
IF = 8A,
dIF/dt = 600A/µs,
VR = 390V,
TC = 125°C
-
53
-
ns
-
2.5
-
Maximum di/dt during tb
-
6.5
-
A
195
-
nC
-
500
-
A/µs
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case
-
-
4.8
°C/W
RθJA
Thermal Resistance Junction to Ambient TO-220F
-
-
70
°C/W
©2003 Fairchild Semiconductor Corporation
ISL9R860PF2 Rev. A
ISL9R860PF2
Package Marking and Ordering Information
ISL9R860PF2
Typical Performance Curves
16
100
IR, REVERSE CURRENT (µA)
IF, FORWARD CURRENT (A)
175oC
175oC
14
150oC
12
25oC
10
125oC
8
100oC
6
4
150oC
10
125oC
100oC
1
25oC
2
0
0
0.25 0.5 0.75
1
1.25 1.5 1.75
2
0.1
100
2.25 2.5 2.75
200
300
Figure 1. Forward Current vs Forward Voltage
600
90
VR = 390V, TJ = 125°C
VR = 390V, TJ = 125°C
80
70
tb AT dIF/dt = 200A/µs, 500A/µs, 800A/µs
tb AT IF = 16A, 8A, 4A
70
60
t, RECOVERY TIMES (ns)
t, RECOVERY TIMES (ns)
500
Figure 2. Reverse Current vs Reverse Voltage
80
50
40
30
20
10
2
4
6
8
10
12
50
40
30
20
ta AT IF = 16A, 8A, 4A
0
0
60
10
ta AT dIF/dt = 200A/µs, 500A/µs, 800A/µs
14
0
100
16
200
IF, FORWARD CURRENT (A)
Figure 3. ta and tb Curves vs Forward Current
11
VR = 390V, TJ = 125°C
dIF/dt = 800A/µs
10
9
8
dIF/dt = 500A/µs
7
6
5
dIF/dt = 200A/µs
4
3
2
0
2
4
6
8
10
12
IF, FORWARD CURRENT (A)
14
16
Figure 5. Maximum Reverse Recovery Current vs
Forward Current
©2003 Fairchild Semiconductor Corporation
300 400
500
600
900
700 800
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
1000
Figure 4. ta and tb Curves vs dIF/dt
IRRM , MAX REVERSE RECOVERY CURRENT (A)
IRRM , MAX REVERSE RECOVERY CURRENT (A)
400
VR , REVERSE VOLTAGE (V)
VF, FORWARD VOLTAGE (V)
14
VR = 390V, TJ = 125°C
12
IF = 16A
10
IF = 8A
8
IF = 4A
6
4
2
0
100
200
300
400
500
600
700
800
900
1000
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 6. Maximum Reverse Recovery Current vs
dIF/dt
ISL9R860PF2 Rev. A
ISL9R860PF2
Typical Performance Curves (Continued)
350
S, REVERSE RECOVERY SOFTNESS FACTOR
6
QRR, REVERSE RECOVERY CHARGE (nC)
VR = 390V, TJ = 125°C
5
4
IF = 16A
IF = 8A
3
IF = 4A
2
1
100
200
300
400
500
600
700
800
900
VR = 390V, TJ = 125°C
300
IF = 16A
250
IF = 8A
200
150
IF = 4A
100
50
100
1000
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
200
300
400
500
600
700
800
900
1000
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 7. Reverse Recovery Softness Factor vs dIF/dt
Figure 8. Reverse Recovery Charge vs dIF/dt
1200
IF(AV), AVERAGE FORWARD CURRENT (A)
CJ , JUNCTION CAPACITANCE (pF)
10
1000
800
600
400
200
0
0.1
1
10
8
6
4
2
0
50
75
100
100
150
125
TC, CASE TEMPERATURE (oC)
VR , REVERSE VOLTAGE (V)
Figure 9. Junction Capacitance vs Reverse Voltage
Figure 10. DC Current Derating Curve
2.0
ZθJA, NORMALIZED
THERMAL IMPEDANCE
1.0
0.1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
SINGLE PULSE
PEAK TJ = PDM x ZθJA x RθJA + TA
0.001
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 11. Normalized Maximum Transient Thermal Impedance
©2003 Fairchild Semiconductor Corporation
ISL9R860PF2 Rev. A
ISL9R860PF2
Test Circuits and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t1 AND t2 CONTROL IF
L
IF
DUT
RG
VGE
CURRENT
SENSE
trr
dt
ta
tb
0
+
VDD
-
MOSFET
t1
dIF
0.25 IRM
IRM
t2
Figure 12. trr Test Circuit
Figure 13. trr Waveforms and Definitions
I = 1A
L = 40mH
R < 0.1Ω
VDD = 50V
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
L
CURRENT
SENSE
Q1
VAVL
R
+
IL
VDD
DUT
t0
Figure 14. Avalanche Energy Test Circuit
©2003 Fairchild Semiconductor Corporation
IL
I V
t1
t2
t
Figure 15. Avalanche Current and Voltage
Waveforms
ISL9R860PF2 Rev. A
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Definition of Terms
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Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
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supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
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The datasheet is printed for reference information only.
Rev. I2
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