® LY62L12916 128K X 16 BIT LOW POWER CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Rev. 0.4 Rev. 0.5 Rev. 0.6 Rev. 1.0 Description Initial Issue Revised Package Outline Dimension(TSOP-II) Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION Revised VTERM to VT1 and VT2 Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Revised Test Condition of ISB1/IDR Added ISB1/IDR values when TA = 25℃ and TA = 40℃ Added SL grade Deleted L grade Revised PACKAGE OUTLINE DIMENSION in page 12 Revised ORDERING INFORMATION in page 13 Revised Notes item 1 and 2 in page 4 1. VIH(max) = VCC + 2.0V for pulse width less than 6ns. 2. VIL(min) = VSS - 2.0V for pulse width less than 6ns. Revised ORDERING INFORMATION Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 Issue Date May.20.2005 Apr.12.2007 Apr.17.2009 Jun.15.2009 May.6.2010 Aug.30.2010 Aug.29.2013 ® LY62L12916 128K X 16 BIT LOW POWER CMOS SRAM Rev. 1.0 FEATURES GENERAL DESCRIPTION Fast access time : 45/55/70ns Low power consumption: Operating current : 23/20/18mA (TYP.) Standby current : 1μA (TYP.) LL/SL -version Single 2.7V ~ 3.6V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) Data retention voltage : 1.5V (MIN.) Green package available Package : 44-pin 400 mil TSOP-II 48-pin 12mm x 20mm TSOP-I 48-ball 6mm x 8mm TFBGA The LY62L12916 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY62L12916 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The LY62L12916 operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Product Family LY62L12916 LY62L12916(E) LY62L12916(I) Operating Temperature 0 ~ 70℃ -20 ~ 80℃ -40 ~ 85℃ Vcc Range Speed 2.7 ~ 3.6V 2.7 ~ 3.6V 2.7 ~ 3.6V 45/55/70ns 45/55/70ns 45/55/70ns FUNCTIONAL BLOCK DIAGRAM Power Dissipation Standby(ISB1,TYP.) Operating(Icc,TYP.) 1µA 23/20/18mA 1µA 23/20/18mA 1µA 23/20/18mA PIN DESCRIPTION Vcc Vss SYMBOL DESCRIPTION A0 – A16 Address Inputs DQ0 – DQ15 Data Inputs/Outputs A0-A16 DQ0-DQ7 Lower Byte DQ8-DQ15 Upper Byte CE# CE2 WE# OE# LB# UB# DECODER I/O DATA CIRCUIT 128Kx16 MEMORY ARRAY COLUMN I/O CE#,CE2 Chip Enable Input WE# Write Enable Input OE# Output Enable Input LB# Lower Byte Control UB# Upper Byte Control VCC Power Supply VSS Ground CONTROL CIRCUIT Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 1 ® LY62L12916 Rev. 1.0 128K X 16 BIT LOW POWER CMOS SRAM PIN CONFIGURATION Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 2 ® LY62L12916 128K X 16 BIT LOW POWER CMOS SRAM Rev. 1.0 PIN CONFIGURATION A LB# OE# A0 A1 B DQ8 UB# A3 A4 CE# DQ0 C DQ9 DQ10 A5 A6 DQ1 DQ2 D Vss DQ11 NC A7 DQ3 Vcc E Vcc DQ12 NC A16 DQ4 Vss F DQ14 DQ13 A14 A15 DQ5 DQ6 G DQ15 NC A12 A13 WE# DQ7 A10 H NC A8 A9 1 2 3 4 TFBGA A2 CE2 A11 NC 5 6 ABSOLUTE MAXIMUN RATINGS* PARAMETER Voltage on VCC relative to VSS Voltage on any other pin relative to VSS Operating Temperature Storage Temperature Power Dissipation DC Output Current SYMBOL VT1 VT2 TA TSTG PD IOUT RATING -0.5 to 4.6 -0.5 to VCC+0.5 0 to 70(C grade) -20 to 80(E grade) -40 to 85(I grade) -65 to 150 1 50 UNIT V V ℃ ℃ W mA *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 3 ® LY62L12916 128K X 16 BIT LOW POWER CMOS SRAM Rev. 1.0 TRUTH TABLE MODE Standby Output Disable Read Write Note: CE# CE2 OE# H X X L L L L L L L L X L X H H H H H H H H X X X H H L L L X X X WE# LB# X X X H H H H H L L L X X H L X L H L L H L UB# X X H X L H L L H L L I/O OPERATION SUPPLY CURRENT DQ0-DQ7 DQ8-DQ15 High – Z High – Z ISB,ISB1 High – Z High – Z High – Z High – Z High – Z High – Z ICC,ICC1 High – Z High – Z DOUT High – Z ICC,ICC1 DOUT High – Z DOUT DOUT DIN High – Z ICC,ICC1 DIN High – Z DIN DIN H = VIH, L = VIL, X = Don't care. DC ELECTRICAL CHARACTERISTICS SYMBOL TEST CONDITION PARAMETER Supply Voltage VCC *1 Input High Voltage VIH *2 Input Low Voltage VIL Input Leakage Current ILI VCC ≧ VIN ≧ VSS Output Leakage VCC ≧ VOUT ≧ VSS, ILO Current Output Disabled Output High Voltage VOH IOH = -1mA Output Low Voltage VOL IOL = 2mA Cycle time = Min. - 45 CE# = VIL and CE2 = VIH, - 55 ICC II/O = 0mA - 70 Other pins at VIL or VIH Average Operating Power supply Current Cycle time = 1µs CE#≦0.2V and CE2≧VCC-0.2V,, ICC1 II/O = 0mA other pins at 0.2V or VCC-0.2V CE# = VIH or CE2 = VIL ISB other pins at VIL or VIH LL LLE/LLI CE# ≧VCC-0.2V Standby Power *5 SL 25℃ Supply Current or CE2≦0.2V *5 SLE ISB1 Other pins at 0.2V *5 40℃ SLI or VCC - 0.2V SL SLE/SLI MIN. 2.7 2.2 - 0.2 -1 *4 MAX. 3.6 VCC+0.3 0.6 1 UNIT V V V µA -1 - 1 µA 2.2 - 2.7 23 20 0.4 40 35 V V mA mA - 18 30 mA - 4 5 mA - 0.3 0.5 mA - 1 1 10 20 µA µA - 1 3 µA - 1 3 µA - 1 1 10 15 µA µA Notes: 1. VIH(max) = VCC + 2.0V for pulse width less than 6ns. 2. VIL(min) = VSS - 2.0V for pulse width less than 6ns. 3. Over/Undershoot specifications are characterized, not 100% tested. 4. Typical values are included for reference only and are not guaranteed or tested. Typical valued are measured at VCC = VCC(TYP.) and TA = 25℃ 5. This parameter is measured at VCC = 3.0V Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 4 TYP. 3.0 - ® LY62L12916 128K X 16 BIT LOW POWER CMOS SRAM Rev. 1.0 CAPACITANCE (TA = 25℃, f = 1.0MHz) PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CIN CI/O MIN. - MAX 6 8 UNIT pF pF Note : These parameters are guaranteed by device characterization, but not production tested. AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Levels Output Load 0.2V to VCC - 0.2V 3ns 1.5V CL = 30pF + 1TTL, IOH/IOL = -1mA/2mA AC ELECTRICAL CHARACTERISTICS (1) READ CYCLE PARAMETER Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time Chip Enable to Output in Low-Z Output Enable to Output in Low-Z Chip Disable to Output in High-Z Output Disable to Output in High-Z Output Hold from Address Change LB#, UB# Access Time LB#, UB# to High-Z Output LB#, UB# to Low-Z Output (2) WRITE CYCLE PARAMETER Write Cycle Time Address Valid to End of Write Chip Enable to End of Write Address Set-up Time Write Pulse Width Write Recovery Time Data to Write Time Overlap Data Hold from End of Write Time Output Active from End of Write Write to Output in High-Z LB#, UB# Valid to End of Write SYM. LY62L12916-45 LY62L12916-55 LY62L12916-70 UNIT MIN. MAX. MIN. MAX. MIN. MAX. tRC 45 55 70 ns tAA 45 55 70 ns tACE 45 55 70 ns tOE 25 30 35 ns tCLZ* 10 10 10 ns tOLZ* 5 5 5 ns tCHZ* 15 20 25 ns tOHZ* 15 20 25 ns tOH 10 10 10 ns tBA 45 55 70 ns tBHZ* 20 25 30 ns tBLZ* 10 10 10 ns SYM. tWC tAW tCW tAS tWP tWR tDW tDH tOW* tWHZ* tBW LY62L12916-45 LY62L12916-55 LY62L12916-70 MIN. MAX. MIN. MAX. MIN. MAX. 45 55 70 40 50 60 40 50 60 0 0 0 35 45 55 0 0 0 20 25 30 0 0 0 5 5 5 15 20 25 35 45 60 - *These parameters are guaranteed by device characterization, but not production tested. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 5 UNIT ns ns ns ns ns ns ns ns ns ns ns ® LY62L12916 128K X 16 BIT LOW POWER CMOS SRAM Rev. 1.0 TIMING WAVEFORMS READ CYCLE 1 (Address Controlled) (1,2) tRC Address tAA Dout tOH Previous Data Valid Data Valid READ CYCLE 2 (CE#, CE2 and OE# Controlled) (1,3,4,5) tRC Address tAA CE# tACE CE2 LB#,UB# tBA OE# tOE tOH tOHZ tBHZ tCHZ tOLZ tBLZ tCLZ Dout High-Z Data Valid High-Z Notes : 1.WE#is high for read cycle. 2.Device is continuously selected OE# = low, CE# = low, CE2 = high, LB# or UB# = low. 3.Address must be valid prior to or coincident with CE# = low, CE2 = high, LB# or UB# = low transition; otherwise tAA is the limiting parameter. 4.tCLZ, tBLZ, tOLZ, tCHZ, tBHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. 5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tBHZ is less than tBLZ, tOHZ is less than tOLZ. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 6 ® LY62L12916 128K X 16 BIT LOW POWER CMOS SRAM Rev. 1.0 WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6) tWC Address tAW CE# tCW CE2 tBW LB#,UB# tAS tWP tWR WE# tWHZ Dout TOW High-Z (4) tDW Din (4) tDH Data Valid WRITE CYCLE 2 (CE#, CE2 Controlled) (1,2,5,6) tWC Address tAW CE# tCW tAS tWR CE2 tBW LB#,UB# tWP WE# tWHZ Dout High-Z (4) tDW Din tDH Data Valid Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 7 ® LY62L12916 128K X 16 BIT LOW POWER CMOS SRAM Rev. 1.0 WRITE CYCLE 3 (LB#,UB# Controlled) (1,2,5,6) tWC Address tAW tWR CE# tCW tAS CE2 tBW LB#,UB# tWP WE# tWHZ Dout High-Z (4) tDW Din tDH Data Valid Notes : 1.WE#,CE#, LB#, UB# must be high or CE2 must be low during all address transitions. 2.A write occurs during the overlap of a low CE#, high CE2, low WE#, LB# or UB# = low. 3.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be placed on the bus. 4.During this period, I/O pins are in the output state, and input signals must not be applied. 5.If the CE#, LB#, UB# low transition and CE2 high transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state. 6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 8 ® LY62L12916 128K X 16 BIT LOW POWER CMOS SRAM Rev. 1.0 DATA RETENTION CHARACTERISTICS PARAMETER VCC for Data Retention Data Retention Current Chip Disable to Data Retention Time Recovery Time tRC* = Read Cycle Time SYMBOL TEST CONDITION VDR CE# ≧ VCC - 0.2V or CE2 ≦ 0.2V LL LLE/LLI VCC = 1.5V SL 25℃ CE# ≧ VCC - 0.2V IDR SLE or CE2 ≦ 0.2V 40℃ Others at 0.2V or VCC-0.2V SLI SL SLE/SLI See Data Retention tCDR Waveforms (below) tR MIN. 1.5 - TYP. 0.5 0.5 MAX. 3.6 5 10 UNIT V µA µA - 0.5 3 µA - 0.5 3 - 0.5 0.5 5 10 µA µA µA 0 - - ns tRC* - - ns DATA RETENTION WAVEFORM Low Vcc Data Retention Waveform (1) (CE# controlled) VDR ≧ 1.5V Vcc Vcc(min.) Vcc(min.) tCDR CE# VIH tR VIH CE# ≧ Vcc-0.2V Low Vcc Data Retention Waveform (2) (CE2 controlled) VDR ≧ 1.5V Vcc Vcc(min.) Vcc(min.) tCDR CE2 tR CE2 ≦ 0.2V VIL VIL Low Vcc Data Retention Waveform (3) (LB#, UB# controlled) VDR ≧ 1.5V Vcc Vcc(min.) Vcc(min.) tCDR LB#,UB# VIH tR LB#,UB# ≧ Vcc-0.2V VIH Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 9 ® LY62L12916 128K X 16 BIT LOW POWER CMOS SRAM Rev. 1.0 PACKAGE OUTLINE DIMENSION 44-pin 400mil TSOP-Ⅱ Package Outline Dimension SYMBOLS A A1 A2 b c D E E1 e L ZD y Θ DIMENSIONS IN MILLMETERS MIN. NOM. MAX. 1.20 0.05 0.10 0.15 0.95 1.00 1.05 0.30 0.45 0.12 0.21 18.212 18.415 18.618 11.506 11.760 12.014 9.957 10.160 10.363 0.800 0.40 0.50 0.60 0.805 0.076 o o o 3 6 0 DIMENSIONS IN MILS MIN. NOM. MAX. 47.2 2.0 3.9 5.9 37.4 39.4 41.3 11.8 17.7 4.7 8.3 717 725 733 453 463 473 392 400 408 31.5 15.7 19.7 23.6 31.7 3 o o o 0 3 6 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 10 ® LY62L12916 Rev. 1.0 128K X 16 BIT LOW POWER CMOS SRAM 48-pin 12 mm x 20 mm TSOP-I Package Outline Dimension Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 11 ® LY62L12916 Rev. 1.0 128K X 16 BIT LOW POWER CMOS SRAM 48-ball 6mm × 8mm TFBGA Package Outline Dimension Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 12 ® LY62L12916 128K X 16 BIT LOW POWER CMOS SRAM Rev. 1.0 ORDERING INFORMATION Package Type Access Time (Speed)(ns) 44Pin(400mil) TSOP-II 45 Power Type Special Ultra Low Power Temperature Range(℃) 0℃~70℃ -20℃~80℃ -40℃~85℃ Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ 55 Special Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ 70 Special Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ Ultra Low Power 0℃~70℃ -20℃~80℃ Packing Type Tray LY62L12916ML-45SL Tape Reel LY62L12916ML-45SLT Tray LY62L12916ML-45SLE Tape Reel LY62L12916ML-45SLET Tray LY62L12916ML-45SLI Tape Reel LY62L12916ML-45SLIT Tray LY62L12916ML-45LL Tape Reel LY62L12916ML-45LLT Tray LY62L12916ML-45LLE Tape Reel LY62L12916ML-45LLET Tray LY62L12916ML-45LLI Tape Reel LY62L12916ML-45LLIT Tray LY62L12916ML-55SL Tape Reel LY62L12916ML-55SLT Tray LY62L12916ML-55SLE Tape Reel LY62L12916ML-55SLET Tray LY62L12916ML-55SLI Tape Reel LY62L12916ML-55SLIT Tray LY62L12916ML-55LL Tape Reel LY62L12916ML-55LLT Tray LY62L12916ML-55LLE Tape Reel LY62L12916ML-55LLET Tray LY62L12916ML-55LLI Tape Reel LY62L12916ML-55LLIT Tray LY62L12916ML-70SL Tape Reel LY62L12916ML-70SLT Tray LY62L12916ML-70SLE Tape Reel LY62L12916ML-70SLET Tray LY62L12916ML-70SLI Tape Reel LY62L12916ML-70SLIT Tray LY62L12916ML-70LL Tape Reel LY62L12916ML-70LLT Tray LY62L12916ML-70LLE Tape Reel LY62L12916ML-70LLET Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 13 Lyontek Item No. ® LY62L12916 128K X 16 BIT LOW POWER CMOS SRAM Rev. 1.0 -40℃~85℃ Tray LY62L12916ML-70LLI Tape Reel LY62L12916ML-70LLIT ORDERING INFORMATION Package Type Access Time (Speed)(ns) 48Pin12mmx20mm TSOP-I 45 Power Type Special Ultra Low Power Temperature Range(℃) 0℃~70℃ -20℃~80℃ -40℃~85℃ Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ 55 Special Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ 70 Special Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ Ultra Low Power 0℃~70℃ -20℃~80℃ Packing Type Tray LY62L12916LL-45SL Tape Reel LY62L12916L-45SLT Tray LY62L12916LL-45SLE Tape Reel LY62L12916LL-45SLET Tray LY62L12916LL-45SLI Tape Reel LY62L12916LL-45SLIT Tray LY62L12916LL-45LL Tape Reel LY62L12916LL-45LLT Tray LY62L12916LL-45LLE Tape Reel LY62L12916LL-45LLET Tray LY62L12916LL-45LLI Tape Reel LY62L12916LL-45LLIT Tray LY62L12916LL-55SL Tape Reel LY62L12916LL-55SLT Tray LY62L12916LL-55SLE Tape Reel LY62L12916LL-55SLET Tray LY62L12916LL-55SLI Tape Reel LY62L12916LL-55SLIT Tray LY62L12916LL-55LL Tape Reel LY62L12916LL-55LLT Tray LY62L12916LL-55LLE Tape Reel LY62L12916LL-55LLET Tray LY62L12916LL-55LLI Tape Reel LY62L12916LL-55LLIT Tray LY62L12916LL-70SL Tape Reel LY62L12916LL-70SLT Tray LY62L12916LL-70SLE Tape Reel LY62L12916LL-70SLET Tray LY62L12916LL-70SLI Tape Reel LY62L12916LL-70SLIT Tray LY62L12916LL-70LL Tape Reel LY62L12916LL-70LLT Tray LY62L12916LL-70LLE Tape Reel LY62L12916LL-70LLET Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 14 Lyontek Item No. ® LY62L12916 128K X 16 BIT LOW POWER CMOS SRAM Rev. 1.0 -40℃~85℃ Tray LY62L12916LL-70LLI Tape Reel LY62L12916LL-70LLIT ORDERING INFORMATION Package Type Access Time (Speed)(ns) 48ball 6mmx8mm TFBGA 45 Power Type Special Ultra Low Power Temperature Range(℃) 0℃~70℃ -20℃~80℃ -40℃~85℃ Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ 55 Special Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ Ultra Low Power 0℃~70℃ -20℃~50℃ -40℃~85℃ 70 Special Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ Ultra Low Power 0℃~70℃ -20℃~80℃ Packing Type Tray LY62L12916GL-45SL Tape Reel LY62L12916GL-45SLT Tray LY62L12916GL-45SLE Tape Reel LY62L12916GL-45SLET Tray LY62L12916GL-45SLI Tape Reel LY62L12916GL-45SLIT Tray LY62L12916GL-45LL Tape Reel LY62L12916GL-45LLT Tray LY62L12916GL-45LLE Tape Reel LY62L12916GL-45LLET Tray LY62L12916GL-45LLI Tape Reel LY62L12916GL-45LLIT Tray LY62L12916GL-55SL Tape Reel LY62L12916GL-55SLT Tray LY62L12916GL-55SLE Tape Reel LY62L12916GL-55SLET Tray LY62L12916GL-55SLI Tape Reel LY62L12916GL-55SLIT Tray LY62L12916GL-55LL Tape Reel LY62L12916GL-55LLT Tray LY62L12916GL-55LLE Tape Reel LY62L12916GL-55LLET Tray LY62L12916GL-55LLI Tape Reel LY62L12916GL-55LLIT Tray LY62L12916GL-70SL Tape Reel LY62L12916GL-70SLT Tray LY62L12916GL-70SLE Tape Reel LY62L12916GL-70SLET Tray LY62L12916GL-70SLI Tape Reel LY62L12916GL-70SLIT Tray LY62L12916GL-70LL Tape Reel LY62L12916GL-70LLT Tray LY62L12916GL-70LLE Tape Reel LY62L12916GL-70LLET Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 15 Lyontek Item No. ® LY62L12916 Rev. 1.0 128K X 16 BIT LOW POWER CMOS SRAM -40℃~85℃ Tray LY62L12916GL-70LLI Tape Reel LY62L12916GL-70LLIT THIS PAGE IS LEFT BLANK INTENTIONALLY. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 16