HABTA55(PNP) GENERAL PURPOSE TRANSISTOR R REPLACEME ENT TYPE : MMBTA55 FEATURES F Driver Trannsistors (TA = 25°C unle M MAXIMUM R RATINGS ess otherwis se noted) Parameter Symbol Collector-Basse Voltage SOT-23 Value Unit VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -4 V Collector Currrent-Continuo ous IC -500 mA Collector Pow wer Dissipation n PC 225 mW Thermal Resistance Junction to Ambient RθJA 556 °C/W Junction Temperature TJ 150 °C Storage Temp perature Tstg -55~+150 °C ELECTRICAL CHARACT E TERISTICS (T ( A= 25°C un nless otherw wise noted) Symbol Test conditio ons Parameter 1:BA ASE Min n MARKING:2H 2:EMITTE ER Typ 3:COLLEC CTOR Max U Unit Collector-Basse Breakdown Voltage VCBO IC=-100μA,IE=0 = -60 V Collector-Emitter Breakdow wn Voltage VCEO IC=-1mA,IB=0 0 -60 V Emitter-Base Breakdown Voltage V VEBO IE=-100uA,IC=0 = -4 V Collector Cut--off Current ICBO VCB=-60V,IE=0 -0.1 μ μA Collector Cut--off Current ICEO VCE=-60V, IB=0 -0.1 μ μA hFE(1) VCE=-1V,IC=-1 10mA 100 0 hFE(2) VCE=-1V,IC=-1 100mA 100 0 Collector-Emitter Saturation n Voltage VCE(sat) IC=-100mA,IB=-10mA -0.25 V Base-Emitter Voltage VBE VCE=-1V, IC=--100mA -1.2 V Transition Fre equency fT VCE=-1V,IC=-1 100mA,f =100 0MHz DC Current Gain G ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E - mail:[email protected] 50 400 M MHz 1/4 HABTA55(PNP) GENERAL PURPOSE TRANSISTOR 200 100 VCE = −2.0 V TJ = 25°C 50 C, CAPACITANCE (pF) 100 70 50 30 20 Cobo 10 7.0 20 −2.0 −3.0 −5.0 −7.0 −10 −50 −70 −100 −20 −30 −50 −100 −10 −20 400 TJ = 125°C VCE = −1.0 V ts tf −20 −30 −50 −70 −100 −200 −300 −55°C 100 80 60 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Switching Time Figure 4. DC Current Gain VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = −1.0 V −0.4 −0.2 VCE(sat) @ IC/IB = 10 −1.0 −2.0 25°C 40 −0.5 −1.0 −2.0 −500 TJ = 25°C −0.6 200 tr td @ VBE(off) = −0.5 V VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) VCC = −40 V IC/IB = 10 IB1 = IB2 TJ = 25°C −0.8 0 −0.5 −5.0 Figure 2. Capacitance 10 −5.0 −7.0 −10 −1.0 −2.0 Figure 1. Current−Gain — Bandwidth Product 100 70 50 20 −0.5 −1.0 VR, REVERSE VOLTAGE (VOLTS) 200 30 5.0 −0.1 −0.2 −200 IC, COLLECTOR CURRENT (mA) 300 t, TIME (ns) Cibo 30 1.0 k 700 500 V, VOLTAGE (VOLTS) TJ = 25°C 70 h FE, DC CURRENT GAIN f T , CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) Typical Characteristics −5.0 −10 −20 −50 −100 −200 −500 −1.0 TJ = 25°C −0.8 IC = −100 mA IC = −50 mA IC = −250 mA IC = −500 mA −0.6 −0.4 −0.2 IC = −10 mA 0 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA) Figure 5. “ON” Voltages Figure 6. Collector Saturation Region ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD −500 E-mail:[email protected] −50 2/4 HABTA55(PNP) GENERAL PURPOSE TRANSISTOR SOT-23 Package Outline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 0.950 TYP 1.800 L 0.037 TYP 2.000 0.071 0.550 RE F 0.079 0.022 RE F L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:[email protected] 3/4 HABTA55(PNP) GENERAL PURPOSE TRANSISTOR SOT-23 Embossed Carrier Tape DIMENSIONS ARE IN MILLIMETER TYPE A B C d E F P0 P P1 W SOT-23 3.15 2.77 1.22 φ1.50 1.75 3.50 4.00 4.00 2.00 8.00 TOLERANCE ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 SOT-23 Tape Leader and Traller SOT-23 Reel DIMENSIONS ARE IN MILLIMETER REEL OPTION 7’’ DIA TOLERANCE D D1 D2 G H I W1 W2 φ178 54.40 13.00 R78 R25.60 R6.50 9.50 12.30 ±2 ±1 ±1 ±1 ±1 ±1 ±1 ±1 ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:[email protected] 4/4