APTGT35H120T3G Full - Bridge Fast Trench + Field Stop IGBT® Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 13 14 CR3 19 Q2 22 7 23 8 CR2 26 Q3 11 10 Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance • High level of integration • Internal thermistor for temperature monitoring Q4 CR4 4 27 3 29 30 31 15 32 16 R1 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS Compliant Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1200 55 35 70 ±20 208 Tj = 125°C 70A@1150V TC = 25°C TC = 80°C TC = 25°C Unit V July, 2006 CR1 A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT35H120T3G – Rev 1 Q1 18 VCES = 1200V IC = 35A @ Tc = 80°C APTGT35H120T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Tj = 25°C Tj = 125°C Tj = 25°C VGE = 15V IC = 35A Tj = 125°C VGE = VCE , IC = 1.5mA VGE = 20V, VCE = 0V Tf Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Turn-on Delay Time Rise Time Td(off) Tf Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF Min Test Conditions Min 1.7 2.0 5.8 Typ 2.5 0.15 90 30 420 Max 250 500 2.1 VR=1200V IF = 30A IF = 60A IF = 30A trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 30A VR = 800V di/dt =200A/µs Er Reverse Recovery Energy IF = 30A VR = 800V µA V V nA Max Unit nF ns 70 90 50 ns 520 90 3.5 mJ 4.1 Typ Max Unit V Tj = 25°C Tj = 125°C Tc = 70°C Unit 6.5 400 1200 DC Forward Current Diode Forward Voltage 5.0 Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 35A R G = 27Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 35A R G = 27Ω VGE = ±15V VBus = 600V Tj = 125°C IC = 35A R G = 27Ω Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ VGE = 0V VCE = 1200V Dynamic Characteristics Symbol Cies Cres Td(on) Tr Td(off) Min 250 500 30 2.0 2.3 Tj = 125°C 1.8 Tj = 25°C 370 Tj = 125°C Tj = 25°C 500 660 Tj = 125°C 3450 Tj = 125°C 1.6 µA A 2.5 V ns July, 2006 ICES Test Conditions nC mJ di/dt =1000A/µs www.microsemi.com 2-5 APTGT35H120T3G – Rev 1 Symbol Characteristic APTGT35H120T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 0.6 1.2 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Thermal and package characteristics RthJC Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 2500 -40 -40 -40 2.5 °C/W V 150 125 100 4.7 110 °C N.m g 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT35H120T3G – Rev 1 28 17 1 July, 2006 SP3 Package outline (dimensions in mm) APTGT35H120T3G Typical Performance Curve Output Characteristics (V GE=15V) 80 70 T J = 125°C 60 T J=25°C 60 VGE =17V 50 50 T J=125°C IC (A) IC (A) Output Characteristics 70 40 30 VGE =15V 40 30 VGE=9V 20 20 10 10 0 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 0 3.5 8 T J=25°C 60 6 T J=125°C 40 30 5 2 1 0 0 7 8 9 10 11 0 12 10 20 40 50 60 70 80 Reverse Bias Safe Operating Area 80 VCE = 600V VGE =15V IC = 35A T J = 125°C 70 Eon 60 5 IC (A) 6 30 IC (A) Switching Energy Losses vs Gate Resistance 7 Eoff Eon V GE (V) 8 4 3 10 6 3 4 20 5 2 V CE (V) V CE = 600V V GE = 15V RG = 27Ω T J = 125°C 7 E (mJ) IC (A) 50 1 Energy losses vs Collector Current Transfert Characteristics 70 E (mJ) VGE=13V Eoff 50 40 30 4 VGE=15V T J=125°C RG=27Ω 20 3 10 2 0 25 45 65 85 Gate Resistance (ohms) 105 0 400 800 V CE (V) 1200 1600 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.4 0.3 0.2 0.1 0.9 0.7 July, 2006 0.6 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) www.microsemi.com 1 10 4-5 APTGT35H120T3G – Rev 1 Thermal Impedance (°C/W) 0.7 APTGT35H120T3G Forward Characteristic of diode 80 V CE=600V D=50% RG =27Ω T J=125°C T C=75°C 60 ZVS ZCS 40 70 60 50 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 80 40 30 20 20 0 0 10 T J=125°C TJ =25°C 10 hard switching 0 20 30 IC (A) 40 50 0 60 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.4 1.2 1 0.8 0.6 0.4 0.2 Diode 0.9 0.7 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT35H120T3G – Rev 1 July, 2006 rectangular Pulse Duration (Seconds)