NEC NNCD9.1E Electrostatic discharge noise clipping diodes 200 mw type Datasheet

DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3E to NNCD12E
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(200 mW TYPE)
PACKAGE DIMENSIONS
This product series is a diode developed for E.S.D (Electrostatic
Discharge) noise protection. Based on the IEC1000-4-2 test on
(in millimeters)
electromagnetic interference (EMI), the diode assures an endur-
2.8 ± 0.2
0.4 –0.05
+0.1
ance of no less than 30 kV, thus making itself most suitable for
external interface circuit protection.
+0.1
1.5
0.65 –0.15
3
+0.1
1
0.4 –0.05
0.95
• Based on the electrostatic discharge immunity test (IEC1000-4-
2
0.95
FEATURES
2.9 ± 0.2
Type NNCD3.3E to NNCD12E Series are into 3PIN Mini Mold
Package having allowable power dissipation of 200 mW.
2), the product assures the minimum endurance of 30 kV.
• Based on the reference supply of the set, the product achieves
Marking
• Circuits for Waveform clipper, Surge absorber.
MAXIMUM RATINGS (TA = 25 °C)
Power Dissipation
P
200 mW
Surge Reverse Power
PRSM
100 W (tT = 10 µs 1 pulse)
Junction Temperature
Tj
150 °C
Storage Temperature
Tstg
–55 °C to +150 °C
Document No. D11773EJ2V0DS00 (2nd edition)
Date Published December 1996 N
Printed in Japan
+0.1
0.16 –0.06
0 to 0.1
• External interface circuit E.S.D protection.
1.1 to 1.4
APPLICATIONS
0.3
a series over a wide range (15 product name lined up).
Fig. 6
PIN CONNECTION
1. NC
2. Anode
3. Cathode
SC-59 (EIAJ)
©
1996
NNCD3.3E to NNCD12E
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
Breakdown VoltageNote 1
VBR (V)
Type Number
Dynamic
ImpedanceNote 2
Zz (Ω)
Capacitance
Ct (pF)
TEST
CONDITION
E.S.D Voltage
(kV)
MIN.
MAX.
IT (mA)
MAX.
IT (mA)
MAX.
VR (V)
TYP.
NNCD3.3E
3.10
3.50
5
130
5
20
1.0
220
30
NNCD3.6E
3.40
3.80
5
130
5
10
1.0
210
30
NNCD3.9E
3.70
4.10
5
130
5
10
1.0
200
30
NNCD4.3E
4.01
4.48
5
130
5
10
1.0
180
30
NNCD4.7E
4.42
4.90
5
130
5
10
1.0
170
30
NNCD5.1E
4.84
5.37
5
130
5
5
1.5
160
30
NNCD5.6E
5.31
5.92
5
80
5
5
2.5
140
VR = 0 V
f = 1 MHz
MIN.
C = 150 pF
R = 330 Ω
30
(IEC1000
-4-2)
5.86
6.53
5
50
5
2
3.0
120
NNCD6.8E
6.47
7.14
5
30
5
2
3.5
110
30
NNCD7.5E
7.06
7.84
5
30
5
2
4.0
90
30
NNCD8.2E
7.76
8.64
5
30
5
2
5.0
90
30
NNCD9.1E
8.56
9.55
5
30
5
2
6.0
90
30
NNCD10E
9.45
10.55
5
30
5
2
7.0
80
30
NNCD11E
10.44
11.56
5
30
5
2
8.0
70
30
NNCD12E
11.42
12.60
5
35
5
2
9.0
70
30
2. Zz is measured at IT give a small A.C. signal.
TEST
CONDITION
30
NNCD6.2E
Notes 1. Tested with pulse (40 ms)
2
Reverse Leakage
IR (µA)
NNCD3.3E to NNCD12E
TYPICAL CHARACTERISTICS (TA = 25 °C)
Fig. 1 POWER DISSIPATION vs. AMBIENT TEMPERATURE
P - Power Dissipation - mW
250
200
150
100
50
0
0
25
50
75
100
125
150
TA - Ambient Temperature - °C
Fig. 2 IT - VBR CHARACTERISTICS
NNCD7.5E
NNCD8.2E
NNCD6.8E
NNCD9.1E
100 m
Fig. 3 IT - VBR CHARACTERISTICS
NNCD10E
1m
NNCD4.7E
100 µ
10 µ
1µ
NNCD5.1E
1n
0
1
2
3
1m
100 µ
10 µ
1µ
100 n
NNCD5.6E
NNCD6.2E
10 n
NNCD12E
10 m
IT - On State Current - A
IT - On State Current - A
NNCD3.3E
NNCD3.6E
10 m NNCD3.9E
NNCD4.3E
100 n
NNCD11E
100 m
4
5
10 n
6
7
8
9 10
VBR - Breakdown Voltage - V
1n
0
7
8
9 10 11 12 13 14 15
VBR - Breakdown Voltage - V
3
NNCD3.3E to NNCD12E
Fig. 4 ZZ - IT CHARACTERISTICS
ZZ - Dynamic Impedance - Ω
1 000
100
TYP.
NNCD3.9E
NNCD4.7E
NNCD5.1E
NNCD5.6E
NNCD10E
10
NNCD7.5E
1
0.1
1
10
100
IT - On State Current - mA
Fig. 5 TRANSIENT THERMAL IMPEDANCE
Zth - Transient Thermal Impedance - °C/W
5 000
1 000
625 °C/W
100
NNCD [ ] E
10
5
1m
10 m
100 m
1
10
100
t - Time - s
Fig. 6 SURGE REVERSE POWER RATING
TA = 25 °C
Non-repetitive
PRSM
PRSM - Surge Reverse Power - W
1 000
tT
100
NNCD [ ] E
10
1
1m
10 m
100 m
1m
tT - Pulse Width - s
4
10 m
100 m
NNCD3.3E to NNCD12E
Sample Application Circuits
SetNote
Conecter
Micro
com.
PC
(CD ROM)
Palallel
Interface
Interface Cable
Note Set
Printer, P.D.C, T.V Game etc
5
NNCD3.3E to NNCD12E
REFERENCE
Document Name
6
Document No.
NEC semiconductor device reliability/quality control system
C11745E
NEC semiconductor device reliability/quality control system
MEI-1201
Quality grade on NEC semiconductor device
C11531E
Semiconductor device mounting technology manual
C10535E
Guide to quality assurance for semiconductor device
MEI-1202
NNCD3.3E to NNCD12E
[MEMO]
7
NNCD3.3E to NNCD12E
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
8
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