Freescale Semiconductor Technical Data Document Number: MRFE6S9046N Rev. 0, 5/2009 RF Power Field Effect Transistors MRFE6S9046NR1 MRFE6S9046GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 920 to 960 MHz. Suitable for CDMA and multicarrier amplifier applications. • Typical GSM Performance: VDD = 28 Volts, IDQ = 300 mA, Pout = 35.5 Watts CW, f = 960 MHz Power Gain — 19 dB Drain Efficiency — 57% • Capable of Handling 5:1 VSWR, @ 32 Vdc, 940 MHz, 70 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness • Typical Pout @ 1 dB Compression Point ] 45 Watts CW • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 285 mA, Pout = 17.8 Watts Avg., Full Frequency Band (920 - 960 MHz) Power Gain — 19 dB Drain Efficiency — 42.5% Spectral Regrowth @ 400 kHz Offset = - 62.5 dBc Spectral Regrowth @ 600 kHz Offset = - 72 dBc EVM — 2.1% rms Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. 920 - 960 MHz, 35.5 W CW, 28 V GSM, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRFE6S9046NR1 CASE 1487 - 05, STYLE 1 TO - 270 WB - 4 GULL PLASTIC MRFE6S9046GNR1 PARTS ARE SINGLE - ENDED RFin/VGS 3 2 RFout/VDS RFin/VGS 4 1 RFout/VDS (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +66 Vdc Gate - Source Voltage VGS - 6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg - 65 to +150 °C TC 150 °C TJ 225 °C Case Operating Temperature Operating Junction Temperature (1,2) 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2009. All rights reserved. RF Device Data Freescale Semiconductor MRFE6S9046NR1 MRFE6S9046GNR1 1 Table 2. Thermal Characteristics Characteristic Value (1,2) Symbol Thermal Resistance, Junction to Case Case Temperature 80°C, 45 W CW, 28 Vdc, IDQ = 300 mA Case Temperature 80°C, 18 W CW, 28 Vdc, IDQ = 300 mA RθJC Unit °C/W 1.3 1.8 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1C (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 μAdc) VGS(th) 1 2.2 3 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 300 mAdc, Measured in Functional Test) VGS(Q) 2 3.1 4 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) 0.1 0.3 0.4 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.6 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 318 — pF Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 120 — pF Off Characteristics On Characteristics Dynamic Characteristics (3) Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 35.5 W CW, IDQ = 300 mA, f = 960 MHz Characteristic Symbol Min Typ Max Unit Power Gain Gps 17.5 19 — dB Drain Efficiency ηD 54 57 — % Input Return Loss IRL — - 13 -7 dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Part internally matched both on input and output. 4. Measurement made with device in straight lead configuration before any lead forming operation is applied. (continued) MRFE6S9046NR1 MRFE6S9046GNR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale GSM EDGE Reference Design Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 300 mA, 920-960 MHz Bandwidth Pout @ 1 dB Compression Point P1dB IMD Symmetry @ 44 W PEP, Pout where IMD Third Order Intermodulation ` 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) — 45 — W MHz — 55 — VBWres — 65 — MHz Gain Flatness in 40 MHz Bandwidth @ Pout = 35.5 W CW GF — 0.2 — dB Average Deviation from Linear Phase in 40 MHz Bandwidth @ Pout = 45 W CW Φ — 0.9 — ° Delay — 3.1 — ns Part - to - Part Insertion Phase Variation @ Pout = 45 W CW, f = 940 MHz, Six Sigma Window ΔΦ — 20 — ° Gain Variation over Temperature ( - 30°C to +85°C) ΔG — 0.021 — dB/°C ΔP1dB — 0.006 — dBm/°C Average Group Delay @ Pout = 45 W CW, f = 940 MHz Output Power Variation over Temperature ( - 30°C to +85°C) Typical GSM EDGE Performances (In Freescale GSM EDGE Reference Design Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 285 mA, Pout = 17.8 W Avg., 920 - 960 MHz EDGE Modulation Power Gain Gps — 19 — dB Drain Efficiency ηD — 42.5 — % Error Vector Magnitude EVM — 2.1 — % rms Spectral Regrowth at 400 kHz Offset SR1 — - 62.5 — dBc Spectral Regrowth at 600 kHz Offset SR2 — - 72 — dBc MRFE6S9046NR1 MRFE6S9046GNR1 RF Device Data Freescale Semiconductor 3 VSUPPLY Z7 R1 VBIAS + C10 C11 C12 C5 Z9 Z6 RF INPUT Z10 Z1 Z2 Z3 C4 Z4 Z11 Z12 C7 C13 0.200″ 0.196″ 0.380″ 0.321″ 0.039″ 0.281″ 0.892″ 0.751″ x 0.044″ x 0.044″ x 0.044″ x 0.450″ x 0.450″ x 0.040″ x 0.051″ x 0.040″ Z14 Z15 C9 C8 DUT C3 C2 Z13 Z5 Z8 C1 Z1 Z2 Z3 Z4 Z5 Z6* Z7 Z8* Z9* C6 RF OUTPUT Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z10 Z11 Z12 Z13 Z14 Z15 PCB C14 0.040″ x 0.450″ Microstrip 0.321″ x 0.450″ Microstrip 0.080″ x 0.280″ Microstrip 0.372″ x 0.044″ Microstrip 0.124″ x 0.044″ Microstrip 0.200″ x 0.044″ Microstrip Rogers R04350, 0.020″, εr = 3.66 * Line length includes microstrip bends Figure 2. MRFE6S9046NR1(GNR1) Test Circuit Schematic — GSM EDGE Reference Design Table 6. MRFE6S9046NR1(GNR1) Test Circuit Component Designations and Values — GSM EDGE Reference Design Part Description Part Number Manufacturer C1, C9 56 pF Chip Capacitors ATC600F560BT500XT ATC C2 2.4 pF Chip Capacitor ATC600F2R4BT500XT ATC C3, C4 6.8 pF Chip Capacitors ATC600F6R8BT500XT ATC C5, C11, C14 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata C6, C7 3.3 pF Chip Capacitors ATC600F3R3BT500XT ATC C8 4.7 pF Chip Capacitor ATC600F4R7BT500XT ATC C10, C13 39 pF Chip Capacitors ATC600F390BT500XT ATC C12 470 μF, 63 V Electrolytic Capacitor MCGPR63V477M13X26 - RH Multicomp R1 4.7 KΩ, 1/4 W Chip Resistor CRCW12064701FKEA Vishay MRFE6S9046NR1 MRFE6S9046GNR1 4 RF Device Data Freescale Semiconductor C12 VGS C10 C5 R1 C1 C2 C4 C3 CUT OUT AREA C11 C6 C8 C9 C7 TO270−WB 2 GHz Rev. 3 − Output C13 C14 VDS TO270−WB 2 GHz Rev. 3 − Input Figure 3. MRFE6S9046NR1(GNR1) Test Circuit Component Layout — GSM EDGE Reference Design MRFE6S9046NR1 MRFE6S9046GNR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 19.6 58 ηD 56 Gps, POWER GAIN (dB) 19.4 Gps 19.3 55 54 19.2 VDD = 28 Vdc, Pout = 35.5 W CW, IDQ = 300 mA 19.1 53 19 52 18.9 51 IRL 18.8 50 925 930 935 940 945 950 955 −19 −22 −25 49 −28 48 960 −31 18.7 18.6 920 −16 IRL, INPUT RETURN LOSS (dB) 57 ηD, DRAIN EFFICIENCY (%) 19.5 f, FREQUENCY (MHz) Figure 4. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 35.5 Watts CW Gps, POWER GAIN (dB) 19.3 19.2 40 Gps 39 19.1 38 VDD = 28 Vdc, Pout = 17.8 W (Avg.) IDQ = 285 mA, EDGE Modulation 19 18.9 IRL 6 5 18.8 4 18.7 3 EVM 18.6 18.5 920 925 930 2 935 940 945 950 955 1 960 −15 −20 −25 −30 −35 −40 IRL, INPUT RETURN LOSS (dB) 41 ηD, DRAIN EFFICIENCY (%) 42 ηD 19.4 EVM, ERROR VECTOR MAGNITUDE (% rms) 19.5 f, FREQUENCY (MHz) Figure 5. Power Gain, Input Return Loss, EVM and Drain Efficiency versus Frequency @ Pout = 17.8 Watts Avg. IDQ = 450 mA IMD, INTERMODULATION DISTORTION (dBc) 21 375 mA Gps, POWER GAIN (dB) 20 300 mA 19 225 mA 18 150 mA 17 16 VDD = 28 Vdc f = 940 MHz 15 1 10 100 −10 VDD = 28 Vdc, Pout = 44 W (PEP), IDQ = 300 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 940 MHz −20 IM3−U −30 IM3−L −40 IM5−L IM5−U −50 IM7−L −60 IM7−U −70 0.1 1 10 Pout, OUTPUT POWER (WATTS) CW TWO−TONE SPACING (MHz) Figure 6. Power Gain versus Output Power Figure 7. Intermodulation Distortion Products versus Two - Tone Spacing 100 MRFE6S9046NR1 MRFE6S9046GNR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS Gps 60 25_C TC = −30_C 20 45 25_C 30 18 85_C VDD = 28 Vdc IDQ = 300 mA f = 940 MHz 16 ηD 15 14 6 EVM, ERROR VECTOR MAGNITUDE (% rms) 85_C 22 Gps, POWER GAIN (dB) 75 −30_C ηD, DRAIN EFFICIENCY (%) 24 0 1 10 70 5 W Avg. 0 900 910 920 930 940 950 960 970 980 −50 SPECTRAL REGROWTH @ 600 kHz (dBc) 25_C TC = 85_C −55 −30_C −60 −65 −70 VDD = 28 Vdc, IDQ = 285 mA f = 940 MHz, EDGE Modulation −55 25_C −60 TC = 85_C −65 −30_C −70 −75 −80 −85 0 10 20 40 30 50 0 10 30 20 40 50 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 10. Spectral Regrowth at 400 kHz versus Output Power Figure 11. Spectral Regrowth at 600 kHz versus Output Power 20 65 TC = −30_C 25_C 16 85_C 14 53 47 41 12 10 35 85_C 8 29 −30_C 6 23 17 ηD EVM 5 10 TC = −30_C 21 25_C 20 19 85_C 18 VDD = 28 Vdc Pout = 35 W CW IDQ = 300 mA 17 11 0 1 22 59 ηD, DRAIN EFFICIENCY (%) VDD = 28 Vdc, IDQ = 285 mA f = 940 MHz, EDGE Modulation Gps, POWER GAIN (dB) SPECTRAL REGROWTH @ 400 kHz (dBc) 1 Figure 9. EVM versus Frequency −75 EVM, ERROR VECTOR MAGNITUDE (% rms) 17.8 W Avg. 2 Figure 8. Power Gain and Drain Efficiency versus Output Power −50 2 3 f, FREQUENCY (MHz) VDD = 28 Vdc, IDQ = 285 mA f = 940 MHz, EDGE Modulation −45 4 Pout = 26.5 W Avg. 4 Pout, OUTPUT POWER (WATTS) CW −40 18 VDD = 28 Vdc IDQ = 285 mA EDGE Modulation 5 60 16 900 910 920 930 940 950 960 970 Pout, OUTPUT POWER (WATTS) AVG. f, FREQUENCY (MHz) Figure 12. EVM and Drain Efficiency versus Output Power Figure 13. Power Gain versus Frequency 980 MRFE6S9046NR1 MRFE6S9046GNR1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS 0 109 15 −6 108 10 −12 20 IRL (dB) −18 5 IRL 0 −5 650 VDD = 28 Vdc Pout = 9 dBm IDQ = 300 mA 750 850 950 1050 1150 1250 1350 MTTF (HOURS) GAIN (dB) Gain 107 106 −24 105 −30 1450 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 35.5 W CW, and ηD = 57%. f, FREQUENCY (MHz) Figure 14. Broadband Frequency Response MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 15. MTTF versus Junction Temperature GSM TEST SIGNAL −10 Reference Power −20 VWB = 30 kHz Sweep Time = 70 ms RBW = 30 kHz −30 −40 (dB) −50 −60 400 kHz −70 −80 400 kHz 600 kHz 600 kHz −90 −100 −110 Center 1.96 GHz 200 kHz Span 2 MHz Figure 16. EDGE Spectrum MRFE6S9046NR1 MRFE6S9046GNR1 8 RF Device Data Freescale Semiconductor Zo = 10 Ω f = 980 MHz Zload f = 820 MHz f = 980 MHz f = 820 MHz Zsource VDD = 28 Vdc, IDQ = 285 mA, Pout = 17.8 W Avg. f (MHz) Zsource W Zload W 820 5.03 - j7.29 7.68 - j3.45 840 4.46 - j6.69 6.97 - j3.53 860 4.00 - j6.11 6.42 - j3.20 880 3.62 - j5.64 5.98 - j2.87 900 3.29 - j5.18 5.65 - j2.52 920 3.03 - j4.75 5.40 - j2.17 940 2.80 - j4.36 5.21 - j1.82 960 2.61 - j3.99 5.09 - j1.47 980 2.46 - j3.64 5.03 - j1.12 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 17. Series Equivalent Source and Load Impedance — GSM EDGE Reference Design MRFE6S9046NR1 MRFE6S9046GNR1 RF Device Data Freescale Semiconductor 9 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS 53 52 51 50 P1dB = 47.57 dBm (57 W) 49 48 Actual 47 46 45 VDD = 28 Vdc, IDQ = 300 mA, Pulsed CW 10 μsec(on), 10% Duty Cycle, f = 920 MHz 44 43 23 24 25 26 27 28 29 30 31 Ideal 51 Ideal P3dB = 48.22 dBm (66 W) Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) 52 32 P3dB = 47.89 dBm (62 W) 50 49 P1dB = 47.25 dBm (53 W) 48 Actual 47 46 45 44 VDD = 28 Vdc, IDQ = 300 mA, Pulsed CW 10 μsec(on), 10% Duty Cycle, f = 960 MHz 43 42 33 23 24 25 26 27 28 29 30 31 32 33 Pin, INPUT POWER (dBm) Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Test Impedances per Compression Level P1dB Zsource Ω Zload Ω 7.83 - j2.01 1.25 - j0.52 Figure 18. Pulsed CW Output Power versus Input Power @ 28 V @ 920 MHz P1dB Zsource Ω Zload Ω 3.79 - j6.51 4.30 - j2.52 Figure 19. Pulsed CW Output Power versus Input Power @ 28 V @ 960 MHz MRFE6S9046NR1 MRFE6S9046GNR1 10 RF Device Data Freescale Semiconductor VSUPPLY Z7 R1 VBIAS + C10 C11 C5 Z9 Z6 RF INPUT Z10 Z1 Z2 Z3 C4 Z4 Z11 Z12 C6 C7 Z15 C9 C8 DUT C3 C2 Z14 Z5 Z8 C1 Z13 RF OUTPUT C12 Z1 Z2 Z3 Z4 Z5 Z6* Z7 Z8*, Z9* 1.320″ 0.020″ 0.378″ 0.321″ 0.039″ 0.306″ 0.708″ 0.738″ x 0.044″ x 0.044″ x 0.044″ x 0.450″ x 0.450″ x 0.040″ x 0.051″ x 0.040″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z10 Z11 Z12 Z13 Z14 Z15 PCB 0.040″ x 0.450″ Microstrip 0.321″ x 0.450″ Microstrip 0.080″ x 0.280″ Microstrip 0.371″ x 0.044″ Microstrip 0.124″ x 0.044″ Microstrip 1.332″ x 0.044″ Microstrip Rogers R04350, 0.020″, εr = 3.66 * Line length includes microstrip bends Figure 20. MRFE6S9046NR1(GNR1) Test Circuit Schematic — Production Test Fixture Table 7. MRFE6S9046NR1(GNR1) Test Circuit Component Designations and Values — Production Test Fixture Part Description Part Number Manufacturer C1, C9 56 pF Chip Capacitors ATC600F560BT500XT ATC C2 3.9 pF Chip Capacitor ATC600F2R4BT500XT ATC C3, C4 6.8 pF Chip Capacitors ATC600F6R8BT500XT ATC C5 0.01 μF Chip Capacitor C1825C103K1GAC Kemet C6, C7 3.3 pF Chip Capacitors ATC600F3R3BT500XT ATC C8 5.1 pF Chip Capacitor ATC600F4R7BT500XT ATC C10, C12 39 pF Chip Capacitors ATC600F390BT500XT ATC C11 470 μF, 63 V Electrolytic Capacitor MCGPR63V477M13X26 - RH Multicomp R1 4.7 KΩ, 1/4 W Chip Resistor CRCW12064K70FKEA Vishay MRFE6S9046NR1 MRFE6S9046GNR1 RF Device Data Freescale Semiconductor 11 VGS C11 C10 VDS C5 C1 C2 C4 C3 CUT OUT AREA R1 C6 C7 C8 C9 C12 VDS MRFE6S8046GN/MRFE6S9046GN Rev. 0 Figure 21. MRFE6S9046NR1(GNR1) Test Circuit Component Layout — Production Test Fixture MRFE6S9046NR1 MRFE6S9046GNR1 12 RF Device Data Freescale Semiconductor Zo = 10 Ω f = 980 MHz Zload f = 820 MHz f = 980 MHz Zsource f = 820 MHz VDD = 28 Vdc, IDQ = 300 mA, Pout = 35.5 W CW f (MHz) Zsource W Zload W 820 4.37 - j6.23 6.55 - j3.27 840 3.95 - j5.76 6.26 - j2.98 860 3.60 - j5.53 6.02 - j2.72 880 3.29 - j4.95 5.86 - j2.48 900 3.04 - j4.59 5.74 - j2.24 920 2.83 - j4.24 5.68 - j1.98 940 2.63 - j3.92 5.64 - j1.74 960 2.45 - j3.62 5.65 - j1.49 980 2.31 - j3.33 5.70 - j1.26 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 22. Series Equivalent Source and Load Impedance — Production Test Fixture MRFE6S9046NR1 MRFE6S9046GNR1 RF Device Data Freescale Semiconductor 13 PACKAGE DIMENSIONS MRFE6S9046NR1 MRFE6S9046GNR1 14 RF Device Data Freescale Semiconductor MRFE6S9046NR1 MRFE6S9046GNR1 RF Device Data Freescale Semiconductor 15 MRFE6S9046NR1 MRFE6S9046GNR1 16 RF Device Data Freescale Semiconductor MRFE6S9046NR1 MRFE6S9046GNR1 RF Device Data Freescale Semiconductor 17 MRFE6S9046NR1 MRFE6S9046GNR1 18 RF Device Data Freescale Semiconductor MRFE6S9046NR1 MRFE6S9046GNR1 RF Device Data Freescale Semiconductor 19 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 May 2009 Description • Initial Release of Data Sheet MRFE6S9046NR1 MRFE6S9046GNR1 20 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor China Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009. All rights reserved. MRFE6S9046NR1 MRFE6S9046GNR1 Document Number: RF Device Data MRFE6S9046N Rev. 0, 5/2009 Freescale Semiconductor 21