BUK9520-100B N-channel TrenchMOS logic level FET Rev. 01 — 6 May 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC-Q101 compliant Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications 12 V, 24 V and 42 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V ID drain current VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 3 - - 63 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 203 W ID = 63 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped - - 222 mJ VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 - 16.4 22.3 mΩ VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 11 - 16.2 20 mΩ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Static characteristics RDSon drain-source on-state resistance BUK9520-100B NXP Semiconductors N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain Graphic symbol D mb G mbb076 S 1 2 3 SOT78A (3-lead TO-220AB; SC-46; SFM3) 3. Ordering information Table 3. Ordering information Type number BUK9520-100B Package Name Description Version 3-lead TO-220AB; SC-46; SFM3 plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78A TO-220AB BUK9520-100B_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 May 2009 2 of 12 BUK9520-100B NXP Semiconductors N-channel TrenchMOS logic level FET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V VDGR drain-gate voltage RGS = 20 kΩ VGS gate-source voltage ID drain current - 100 V -15 15 V Tmb = 25 °C; VGS = 5 V; see Figure 1; see Figure 3 - 63 A Tmb = 100 °C; VGS = 5 V; see Figure 1 - 45 A IDM peak drain current Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 - 253 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 203 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Source-drain diode IS source current Tmb = 25 °C - 63 A ISM peak source current tp ≤ 10 µs; pulsed; Tmb = 25 °C - 253 A - 222 mJ Avalanche ruggedness non-repetitive ID = 63 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 5 V; drain-source avalanche Tj(init) = 25 °C; unclamped energy EDS(AL)S 03aa24 120 Ider (%) Pder (%) 80 80 40 40 0 0 0 50 100 150 200 0 Tmb (°C) Fig 1. 03na19 120 100 150 200 Tmb (°C) Normalized continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature BUK9520-100B_1 Product data sheet 50 © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 May 2009 3 of 12 BUK9520-100B NXP Semiconductors N-channel TrenchMOS logic level FET 003aac769 103 ID (A) Limit RDSon = VDS / ID 102 tp =10 μs 100 μs 10 DC 1ms 10 ms 1 100 ms 10-1 1 Fig 3. 102 10 103 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-mb) Rth(j-a) Conditions Min Typ Max Unit thermal resistance from see Figure 4 junction to mounting base - - 0.75 K/W thermal resistance from vertical in still air; SOT78 package junction to ambient - 60 - K/W 003a a c770 1 Zth (j-mb) (K/W) δ = 0.5 0.2 10-1 0.1 0.05 0.02 10 δ= P -2 tp T s ingle s hot t tp T 10-3 1e -6 Fig 4. 10-5 10-4 10-3 10-2 10-1 tp (s ) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration BUK9520-100B_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 May 2009 4 of 12 BUK9520-100B NXP Semiconductors N-channel TrenchMOS logic level FET 6. Characteristics Table 6. Symbol Characteristics Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 100 - - V ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 90 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 10 1 1.58 2 V ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 10 0.5 - - V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 10 - - 2.3 V Static characteristics V(BR)DSS VGS(th) IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance VDS = 100 V; VGS = 0 V; Tj = 175 °C - - 500 µA VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.05 1 µA VDS = 0 V; VGS = -10 V; Tj = 25 °C - 2 100 nA VDS = 0 V; VGS = 10 V; Tj = 25 °C - 2 100 nA VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 - 16.4 22.3 mΩ VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 - 15.6 18.5 mΩ VGS = 5 V; ID = 25 A; Tj = 175 °C; see Figure 12; see Figure 11 - - 50 mΩ VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 11 - 16.2 20 mΩ ID = 25 A; VDS = 80 V; VGS = 5 V; Tj = 25 °C; see Figure 14; see Figure 15 - 53.4 - nC - 9.5 - nC - 21.2 - nC Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 16 VDS = 30 V; RL = 1.2 Ω; VGS = 5 V; RG(ext) = 10 Ω; Tj = 25 °C - 4300 5657 pF - 340 411 pF - 150 201 pF - 45 - ns - 116 - ns turn-off delay time - 173 - ns tf fall time - 77 - ns LD internal drain inductance from drain lead 6 mm from package to centre of die; Tj = 25 °C - 4.5 - nH from upper edge of drain mounting base to centre of die; Tj = 25 °C - 2.5 - nH from source lead to source bond pad; Tj = 25 °C - 7.5 - nH LS internal source inductance BUK9520-100B_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 May 2009 5 of 12 BUK9520-100B NXP Semiconductors N-channel TrenchMOS logic level FET Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 13 - 0.86 1.2 V trr reverse recovery time - 80 - ns Qr recovered charge IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 30 V; Tj = 25 °C - 272 - nC 03aa36 10-1 ID (A) 003a a c771 150 ID (A) 10-2 VGS (V) =10 4.5 120 3.4 10-3 90 min typ 3.2 max 10-4 60 3 10-5 30 2.7 10-6 0 2.5 0 Fig 5. 1 2 VGS (V) 3 0 Sub-threshold drain current as a function of gate-source voltage 003a a c772 28 RDS on (mΩ) Fig 6. 2 3 4 VDS (V) 5 Output characteristics: drain current as a function of drain-source voltage; typical values 003a a c774 160 gfs (S ) 24 120 20 80 16 40 0 12 2 Fig 7. 1 4 6 8 VGS (V) 0 10 Drain-source on-state resistance as a function of gate-source voltage; typical values. Fig 8. 60 90 I D (A) 120 Forward transconductance as a function of drain current; typical values. BUK9520-100B_1 Product data sheet 30 © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 May 2009 6 of 12 BUK9520-100B NXP Semiconductors N-channel TrenchMOS logic level FET 003a a c776 120 ID (A) 03aa33 2.5 VGS(th) (V) 2 max 90 1.5 typ 1 min 60 Tj = 150 °C 30 25 °C 0.5 0 -60 0 0 Fig 9. 1 2 3 VGS (V) 4 Transfer characteristics: drain current as a function of gate-source voltage; typical values. 2.5 2.7 RDS on (mΩ) 3 3.2 60 120 Tj (°C) 180 Fig 10. Gate-source threshold voltage as a function of junction temperature 003a a c773 50 0 03aa29 3 3.4 a 40 VGS (V) = 4.5 2 10 30 1 20 10 0 30 60 90 120 I D (A) 150 Fig 11. Drain-source on-state resistance as a function of drain current; typical values. 0 -60 60 120 Tj (°C) 180 Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature BUK9520-100B_1 Product data sheet 0 © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 May 2009 7 of 12 BUK9520-100B NXP Semiconductors N-channel TrenchMOS logic level FET 003a a c778 120 VDS IS (A) ID 90 VGS(pl) VGS(th) 60 VGS 150 °C QGS1 Tj = 25 °C 30 QGS2 QGS QGD QG(tot) 003aaa508 0 Fig 14. Gate charge waveform definitions 0 0.5 1 1.5 V (V) 2 SD Fig 13. Source current as a function of source drain voltage; typical values. 003a a c777 5 003a a c775 104 Tj = 25 °C VGS (V) C (pF) 4 Cis s VDS = 14V 3 VDS = 80V 103 2 Cos s 1 Crs s 0 10 0 20 40 QG (nC) 60 Fig 15. Gate-source voltage as a function of turn-on gate charge; typical values. 2 10-1 10 2 VDS (V) 10 Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BUK9520-100B_1 Product data sheet 1 © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 May 2009 8 of 12 BUK9520-100B NXP Semiconductors N-channel TrenchMOS logic level FET 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78A A A1 p q mounting base D1 D L2 L1(1) Q b1 L 1 2 3 c b e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1(1) L2 max. p q Q mm 4.5 4.1 1.39 1.27 0.9 0.6 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.0 2.7 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78A REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 03-01-22 05-03-14 Fig 17. Package outline SOT78A (3-lead TO-220AB; SC-46; SFM3) BUK9520-100B_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 May 2009 9 of 12 BUK9520-100B NXP Semiconductors N-channel TrenchMOS logic level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK9520-100B_1 20090506 Product data sheet - - BUK9520-100B_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 May 2009 10 of 12 BUK9520-100B NXP Semiconductors N-channel TrenchMOS logic level FET 9. Legal information 9.1 Data sheet status Document status [1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BUK9520-100B_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 May 2009 11 of 12 BUK9520-100B NXP Semiconductors N-channel TrenchMOS logic level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 6 May 2009 Document identifier: BUK9520-100B_1