Vishay BZT52C3V3 Small signal zener diode Datasheet

BZT52-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Silicon planar Zener diodes
Available
• The Zener voltages are graded according to
the international E24 standard
• AEC-Q101 qualified available
• ESD capability according to AEC-Q101:
Human body model > 8 kV
Machine model > 800 V
• Base P/N-E3 - RoHS-compliant, commercial
grade
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
UNIT
VZ range nom.
2.4 to 75
V
Test current IZT
2.5; 5
mA
VZ specification
Pulse current
Int. construction
Single
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
3000 (8 mm tape on 7" reel)
15 000/box
10 000 (8 mm tape on 13" reel)
10 000/box
BZT52C2V4-E3-08 to BZT52C75-E3-08
BZT52B2V4-E3-08 to BZT52B75-E3-08
BZT52C2V4-HE3-08 to BZT52C75-HE3-08
BZT52-series
BZT52B2V4-HE3-08 to BZT52B75-HE3-08
BZT52C2V4-E3-18 to BZT52C75-E3-18
BZT52B2V4-E3-18 to BZT52B75-E3-18
BZT52C2V4-HE3-18 to BZT52C75-HE3-18
BZT52B2V4-HE3-18 to BZT52B75-HE3-18
PACKAGE
PACKAGE NAME
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY
LEVEL
SOLDERING CONDITIONS
SOD-123
10.3 mg
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Zener current
Thermal resistance junction to ambient air
TEST CONDITION
Diode on ceramic substrate 0.7 mm; 5
pad areas
mm2
Diode on ceramic substrate 0.7 mm; 2.5
pad areas
mm2
SYMBOL
VALUE
UNIT
Ptot
500
mW
Ptot
410
mW
RthJA
300
K/W
See table “Electrical Characteristics “
Valid provided that electrodes are kept at
ambient temperature
Tj
150
°C
Storage temperature range
Tstg
-65 to +150
°C
Operating temperature range
Top
-55 to +150
°C
Junction temperature
Rev. 1.9, 08-Nov-16
Document Number: 85760
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZT52-Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE (1)
PART
NUMBER
MARKING
CODE
VZ at IZT1
TEST
CURRENT
IZT1
V
REVERSE
VOLTAGE
IZT2
VR at IR
mA
V
nA
DYNAMIC
RESISTANCE
ZZ at
IZT1
ZZK at
IZT2

TEMP.
COEFFICIENT
ADMISSABLE ZENER
CURRENT (4)
VZ
IZ at
IZ at
Tamb = 45 °C Tamb = 25 °C
10-4/°C
mA
MIN. NOM. MAX.
BZT52C2V4
W1
2.2
2.4
2.6
5
1
-
-
85
600
-9 to -4
-
-
BZT52C2V7
W2
2.5
2.7
2.9
5
1
-
-
75 (< 83)
< 500
-9 to -4
113
134
BZT52C3V0
W3
2.8
3.0
3.2
5
1
-
-
80 (< 95)
< 500
-9 to -3
98
118
BZT52C3V3
W4
3.1
3.3
3.5
5
1
-
-
80 (< 95)
< 500
-8 to -3
92
109
BZT52C3V6
W5
3.4
3.6
3.8
5
1
-
-
80 (< 95)
< 500
-8 to -3
85
100
BZT52C3V9
W6
3.7
3.9
4.1
5
1
-
-
80 (< 95)
< 500
-7 to -3
77
92
BZT52C4V3
W7
4
4.3
4.6
5
1
-
-
80 (< 95)
< 500
-6 to -1
71
84
BZT52C4V7
W8
4.4
4.7
5
5
1
-
-
70 (< 78)
< 500
-5 to +2
64
76
BZT52C5V1
W9
4.8
5.1
5.4
5
1
> 0.8
100
30 (< 60)
< 480
-3 to +4
56
67
BZT52C5V6
WA
5.2
5.6
6
5
1
>1
100
10 (< 40)
< 400
-2 to +6
50
59
BZT52C6V2
WB
5.8
6.2
6.6
5
1
>2
100
4.8 (< 10)
< 200
-1 to +7
45
54
BZT52C6V8
WC
6.4
6.8
7.2
5
1
>3
100
4.5 (< 8)
< 150
+2 to +7
41
49
BZT52C7V5
WD
7
7.5
7.9
5
1
>5
100
4 (< 7)
< 50
+3 to +7
37
44
BZT52C8V2
WE
7.7
8.2
8.7
5
1
>6
100
4.5 (< 7)
< 50
+4 to +7
34
40
BZT52C9V1
WF
8.5
9.1
9.6
5
1
>7
100
4.8 (< 10)
< 50
+5 to +8
30
36
BZT52C10
WG
9.4
10
10.6
5
1
> 7.5
100
5.2 (< 15)
< 70
+5 to +8
28
33
BZT52C11
WH
10.4
11
11.6
5
1
> 8.5
100
6 (< 20)
< 70
+5 to +9
25
30
BZT52C12
WI
11.4
12
12.7
5
1
>9
100
7 (< 20)
< 90
+6 to +9
23
28
BZT52C13
WK
12.4
13
14.1
5
1
> 10
100
9 (< 25)
< 110
+7 to +9
21
25
BZT52C15
WL
13.8
15
15.6
5
1
> 11
100
11 (< 30)
< 110
+7 to +9
19
23
BZT52C16
WM
15.3
16
17.1
5
1
> 12
100
13 (< 40)
< 170
+8 to +9.5
17
20
BZT52C18
WN
16.8
18
19.1
5
1
> 14
100
18 (< 50)
< 170
+8 to +9.5
15
18
BZT52C20
WO
18.8
20
21.2
5
1
> 15
100
20 (< 50)
< 220
+8 to +10
14
17
BZT52C22
WP
20.8
22
23.3
5
1
> 17
100
25 (< 55)
< 220
+8 to +10
13
16
BZT52C24
WR
22.8
24
25.6
5
1
> 18
100
28 (< 80)
< 220
+8 to +10
11
13
BZT52C27
WS
25.1
27
28.9
5
1
> 20
100
30 (< 80)
< 250
+8 to +10
10
12
BZT52C30
WT
28
30
32
5
1
> 22.5 100
35 (< 80)
< 250
+8 to +10
9
10
BZT52C33
WU
31
33
35
5
1
> 25
100
40 (< 80)
< 250
+8 to +10
8
9
BZT52C36
WW
34
36
38
5
1
> 27
100
40 (< 90)
< 250
+8 to +10
8
9
BZT52C39
WX
37
39
41
5
1
> 29
100
50 (< 90)
< 300
+10 to +12
7
8
BZT52C43
WY
40
43
46
5
1
> 32
100 60 (< 100)
< 700
+10 to +12
6
7
BZT52C47
WZ
44
47
50
5
1
> 35
100 70 (< 100)
< 750
+10 to +12
5
6
BZT52C51
X1
48
51
54
5
1
> 38
100 70 (< 100)
< 750
+10 to +12
5
6
BZT52C56
X2
52
56
60
2.5
0.5
-
-
< 135 (2)
< 1000 (3)
typ. +10 (2)
-
-
BZT52C62
X3
58
62
66
2.5
0.5
-
-
< 150 (2)
< 1000 (3)
typ. +10 (2)
-
-
BZT52C68
X4
64
68
72
2.5
0.5
-
-
< 200 (2)
< 1000 (3)
typ. +10 (2)
-
-
BZT52C75
X5
70
75
79
2.5
0.5
-
-
< 250 (2)
< 1500 (3)
typ. +10 (2)
-
-
Notes
• IZT1 = 5 mA, IZT2 = 1 mA
(1) Measured with pulses t = 5 ms
p
(2) I
ZT1 = 2.5 mA
(3) I
ZT2 = 0.5 mA
(4) Valid provided that electrodes are kept at ambient temperature
Rev. 1.9, 08-Nov-16
Document Number: 85760
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZT52-Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE (1)
PART
NUMBER
MARKING
CODE
VZ at IZT1
TEST
CURRENT
IZT1
V
REVERSE
VOLTAGE
IZT2
VR at IR
mA
V
nA
DYNAMIC
RESISTANCE
ZZK at
IZT2
ZZ at IZT1

TEMP.
ADMISSABLE ZENER
COEFFICIENT
CURRENT (4)
VZ
IZ at
IZ at
Tamb = 45 °C Tamb = 25 °C
10-4/°C
mA
MIN. NOM. MAX.
BZT52B2V4
W1
2.35
2.4
2.45
5
1
-
-
85
600
-9 to -4
-
-
BZT52B2V7
W2
2.65
2.7
2.75
5
1
-
-
75 (< 83)
< 500
-9 to -4
113
134
BZT52B3V0
W3
2.94
3.0
3.06
5
1
-
-
80 (< 95)
< 500
-9 to -3
98
118
BZT52B3V3
W4
3.23
3.3
3.37
5
1
-
-
80 (< 95)
< 500
-8 to -3
92
109
BZT52B3V6
W5
3.53
3.6
3.67
5
1
-
-
80 (< 95)
< 500
-8 to -3
85
100
BZT52B3V9
W6
3.82
3.9
3.98
5
1
-
-
80 (< 95)
< 500
-7 to -3
77
92
BZT52B4V3
W7
4.21
4.3
4.39
5
1
-
-
80 (< 95)
< 500
-6 to -1
71
84
BZT52B4V7
W8
4.61
4.7
4.79
5
1
-
-
70 (< 78)
< 500
-5 to +2
64
76
BZT52B5V1
W9
5
5.1
5.2
5
1
> 0.8
100
30 (< 60)
< 480
-3 to +4
56
67
BZT52B5V6
WA
5.49
5.6
5.71
5
1
>1
100
10 (< 40)
< 400
-2 to +6
50
59
BZT52B6V2
WB
6.08
6.2
6.32
5
1
>2
100
4.8 (< 10)
< 200
-1 to +7
45
54
BZT52B6V8
WC
6.66
6.8
6.94
5
1
>3
100
4.5 (< 8)
< 150
+2 to +7
41
49
BZT52B7V5
WD
7.35
7.5
7.65
5
1
>5
100
4 (< 7)
< 50
+3 to +7
37
44
BZT52B8V2
WE
8.04
8.2
8.36
5
1
>6
100
4.5 (< 7)
< 50
+4 to +7
34
40
BZT52B9V1
WF
8.92
9.1
9.28
5
1
>7
100
4.8 (< 10)
< 50
+5 to +8
30
36
BZT52B10
WG
9.8
10
10.2
5
1
> 7.5
100
5.2 (< 15)
< 70
+5 to +8
28
33
BZT52B11
WH
10.8
11
11.2
5
1
> 8.5
100
6 (< 20)
< 70
+5 to +9
25
30
BZT52B12
WI
11.8
12
12.2
5
1
>9
100
7 (< 20)
< 90
+6 to +9
23
28
BZT52B13
WK
12.7
13
13.3
5
1
> 10
100
9 (< 25)
< 110
+7 to +9
21
25
BZT52B15
WL
14.7
15
15.3
5
1
> 11
100
11 (< 30)
< 110
+7 to +9
19
23
BZT52B16
WM
15.7
16
16.3
5
1
> 12
100
13 (< 40)
< 170
+8 to +9.5
17
20
BZT52B18
WN
17.6
18
18.4
5
1
> 14
100
18 (< 50)
< 170
+8 to +9.5
15
18
BZT52B20
WO
19.6
20
20.4
5
1
> 15
100
20 (< 50)
< 220
+8 to +10
14
17
BZT52B22
WP
21.6
22
22.4
5
1
> 17
100
25 (< 55)
< 220
+8 to +10
13
16
BZT52B24
WR
23.5
24
24.5
5
1
> 18
100
28 (< 80)
< 220
+8 to +10
11
13
BZT52B27
WS
26.5
27
27.5
5
1
> 20
100
30 (< 80)
< 250
+8 to +10
10
12
BZT52B30
WT
29.4
30
30.6
5
1
> 22.5
100
35 (< 80)
< 250
+8 to +10
9
10
BZT52B33
WU
32.3
33
33.7
5
1
> 25
100
40 (< 80)
< 250
+8 to +10
8
9
BZT52B36
WW
35.3
36
36.7
5
1
> 27
100
40 (< 90)
< 250
+8 to +10
8
9
BZT52B39
WX
38.2
39
39.8
5
1
> 29
100
50 (< 90)
< 300
+10 to +12
7
8
BZT52B43
WY
42.1
43
43.9
5
1
> 32
100
60 (< 100)
< 700
+10 to +12
6
7
BZT52B47
WZ
46.1
47
47.9
5
1
> 35
100
70 (< 100)
< 750
+10 to +12
5
6
BZT52B51
X1
50
51
52
5
1
> 38
100
70 (< 100)
< 750
+10 to +12
5
6
BZT52B56
X2
54.9
56
57.1
2.5
0.5
-
-
< 135 (2)
< 1000 (3)
typ. +10 (2)
-
-
150 (2)
1000 (3)
(2)
BZT52B62
X3
60.8
62
63.2
2.5
0.5
-
-
<
-
-
BZT52B68
X4
66.6
68
69.4
2.5
0.5
-
-
< 200 (2)
< 1000 (3)
typ. +10 (2)
-
-
BZT52B75
X5
73.5
75
76.5
2.5
0.5
-
-
< 250 (2)
< 1500 (3)
typ. +10 (2)
-
-
<
typ. +10
Notes
• IZT1 = 5 mA, IZT2 = 1 mA
(1) Measured with pulses t = 5 ms
p
(2) I
ZT1 = 2.5 mA
(3) I
ZT2 = 0.5 mA
(4) Valid provided that electrodes are kept at ambient temperature
Rev. 1.9, 08-Nov-16
Document Number: 85760
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZT52-Series
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Ω
100
mA
103
TJ = 25 °C
102
IF
5
4
10
1
3
rzj
TJ = 100 °C
33
2
27
22
10
10-1
18
TJ = 25 °C
10-2
15
5
4
10-3
12
3
10
2
10-4
6.8/8.2
6.2
1
-5
10
0
0.2
0.4
0.6
0.8
1V
VF
18114
0.1
2
1
5
2
5
18119
10
IZ
2
5
100 mA
Fig. 4 - Dynamic Resistance vs. Zener Current
Fig. 1 - Forward characteristics
mW
500
Ω
103
Tj = 25 °C
7
5
4
400
Rzj
Ptot
3
2
300
47 + 51
43
39
36
102
7
200
5
4
3
100
2
10
0.1
0
0
100
200 °C
Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature
3
4 5
2
3 4 5
IZ
Ω
103
TJ = 25 °C
5
4
3
2
1
10
mA
Fig. 5 - Dynamic Resistance vs. Zener Current
Ω
1000
rzj
2
18120
Tamb
18888
Rzth
Rzth = RthA x VZ x
5
4
3
2
Δ VZ
ΔTj
102
100
5
4
3
5
4
3
2
2
10
2.7
3.6
4.7
5.1
5
4
3
2
10
5
4
3
negative
2
5.6
1
0.1
18117
2
5
1
2
5
10
2
5
100 mA
IZ
Fig. 3 - Dynamic Resistance vs. Zener Current
positive
1
1
18121
2
3
4 5
10
2
3 4 5
100 V
VZ at IZ = 5 mA
Fig. 6 - Thermal Differential Resistance vs. Zener Voltage
Rev. 1.9, 08-Nov-16
Document Number: 85760
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZT52-Series
www.vishay.com
Vishay Semiconductors
Ω
100
mV/°C
100
IZ = 5 mA
7
5
4
Rzj
Δ VZ
ΔTj
3
80
2
60
10
7
40
5
4
3
20
2
Tj = 25 °C
IZ = 5 mA
1
1
2
3
10
4 5
2
3 4 5
18122
0
0
100 V
VZ
Fig. 7 - Dynamic Resistance vs. Zener Voltage
60
40
100 V
80
VZ at IZ = 2 mA
Fig. 10 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
mV/°C
25
Δ VZ
ΔTj
20
18136
V
9
8
20
IZ =
15
VZ at IZ = 5 mA
7
5 mA
1 mA
20 mA
ΔVZ
51
6
5
43
4
10
36
3
5
2
1
0
0
-1
0
-5
1
2
3
10
4 5
2
3 4 5
100 V
40
60
80
18158
100
Tj
120
140 °C
VZ at IZ = 5 mA
V ≥ 27 V, I = 2 mA
18135
Fig. 8 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
Fig. 11 - Change of Zener Voltage vs. Junction Temperature
V
0.8
25
0.7
VZ at IZ = 5 mA
V
1.6
15
0.5
1.2
ΔVZ 1.0
8
0.4
0.8
7
0.6
0.2
6.2
5.9
0.4
0.1
5.6
0.3
0
0.2
0
5.1
- 0.2
-1
3.6
- 0.2
0
18124
20
40
60
80
ΔVZ = rZth x IZ
IZ = 5 mA
VZ >= 56 V; IZ = 2.5 mA
1.4
10
0.6
Δ VZ
IZ = 5 mA
20
- 0.4
4.7
100 120 140 C
1
18159
10
VZ at IZ = 5 mA
100 V
Tj
Fig. 9 - Change of Zener Voltage vs. Junction Temperature
Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
Rev. 1.9, 08-Nov-16
Document Number: 85760
5
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZT52-Series
www.vishay.com
V
5
Vishay Semiconductors
mA
50
ΔVZ = rzth x IZ
4
Tj = 25 °C
3.9 5.6
2.7
6.8
3.3 4.7
40
lZ
Δ VZ
3
8.2
30
IZ = 5 mA
2
20
1
Test
current
IZ 5 mA
10
IZ = 2.5 mA
0
0
0
20
40
60
80
100 V
0
VZ at IZ = 5 mA
18160
18111
Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
mA
30
lZ
1
2
3
4
5
6
7
8
9 10 V
VZ
Fig. 14 - Breakdown Characteristics
10
12
Tj = 25 °C
15
20
18
22
27
Test
10 current
IZ 5 mA
33 36
0
0
18112
10
20
30
40 V
VZ
Fig. 15 - Breakdown Characteristics
18157
Fig. 16 - Breakdown Characteristics
Rev. 1.9, 08-Nov-16
Document Number: 85760
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZT52-Series
www.vishay.com
Vishay Semiconductors
0.10 (0.004)
0.15 (0.006)
8°
0.45 (0.018)
0.25 (0.010)
0° to
0.2 (0.008)
1 (0.039)
1.35 (0.053)
0.1 (0.004) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.5 (0.020) ref.
Cathode bar
Mounting Pad Layout
2.85 (0.112)
2.55 (0.100)
0.85 (0.033)
2.5 (0.098)
0.85 (0.033)
3.55 (0.140)
1.7 (0.067)
3.85 (0.152)
1.40 (0.055)
0.45 (0.018)
0.65 (0.026)
0.85 (0.033)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Rev. 1.9, 08-Nov-16
Document Number: 85760
7
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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including but not limited to the warranty expressed therein.
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Revision: 13-Jun-16
1
Document Number: 91000
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