AOSMD AO7414 N-channel enhancement mode field effect transistor Datasheet

AO7414
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO7414 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V, in the
small SOT-323 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.
AO7414 and AO7414L are electrically identical.
-RoHS Compliant
-AO7414L is Halogen Free
VDS (V) = 20V
ID = 2 A (VGS = 4.5V)
RDS(ON) < 62mΩ (VGS = 4.5V)
RDS(ON) < 70mΩ (VGS = 2.5V)
RDS(ON) < 85mΩ (VGS = 1.8V)
SC-70
(SOT-323)
Top View
D
G
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
TA=70°C
V
Junction and Storage Temperature Range
0.35
W
0.22
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
25
PD
TA=70°C
Alpha Omega Semiconductor, Ltd.
±8
1.5
ID
IDM
B
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Units
V
2
TA=25°C
Power Dissipation A
Maximum
20
RθJA
RθJL
Typ
300
340
280
°C
Max
360
425
320
Units
°C/W
°C/W
°C/W
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AO7414
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.5
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
25
V
TJ=55°C
VGS=4.5V, ID=2A
5
0.68
VGS=2.5V, ID=1.8A
56
70
VGS=1.8V, ID=1A
66
85
VDS=5V, ID=2A
15
0.7
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
V
62
Forward Transconductance
Crss
1
90
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
Output Capacitance
nA
50
VSD
Coss
±100
70
TJ=125°C
260
VGS=0V, VDS=10V, f=1MHz
VGS=4.5V, VDS=10V, ID=2A
mΩ
mΩ
S
1
V
0.35
A
320
pF
48
pF
27
VGS=0V, VDS=0V, f=1MHz
µA
A
gFS
IS
Units
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
20
VDS=20V, VGS=0V
IDSS
RDS(ON)
Typ
pF
3
4.5
Ω
2.9
3.8
nC
0.4
nC
Qgd
Gate Drain Charge
0.6
nC
tD(on)
Turn-On DelayTime
2.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Qrr
VGS=4.5V, VDS=10V, RL=5Ω,
RGEN=6Ω
3.2
ns
21
ns
IF=2A, dI/dt=100A/µs
14
3
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=2A, dI/dt=100A/µs
ns
19
3.4
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev1: March 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO7414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
25
4.5V
18
16
20
2.5V
14
12
ID(A)
ID (A)
15
10
2V
8
10
VGS=4.5V, ID=1.8A
6
VGS=1.5V
5
4
VGS=2.5V, ID=1.7A
VGS=1.8V, ID=1A
0
0
1
2
3
25°C
0
0
VGS=1.5V, ID=1A
4
125°C
2
0.5
5
1
1.5
2
2.5
3
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
1.60E+00
120
Normalized On-Resistance
RDS(ON) (mΩ)
100
80
VGS=1.8V
VGS=2.5V
60
VGS=2.5V
ID=1.7A
VGS=1.8V
ID=1A
1.40E+00
1.20E+00
VGS=4.5V
ID=1.8A
1.00E+00
VGS=4.5V
40
0
1
2
3
4
5
6
7
8
9
10
8.00E-01
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-50 -25
0
25
50
75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
120
1.0E+00
ID=2A
1.0E-01
IS (A)
RDS(ON) (mΩ)
100
80
125°C
1.0E-02
25°C
125°C
1.0E-03
60
25°C
1.0E-04
1.0E-05
40
1
2
3
4
5
6
7
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO7414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
400
5
300
Capacitance (pF)
VGS (Volts)
350
VDS
=10V
VDS
=10V
I
=2.2A
D
ID=3.5A
4
3
2
VGS=4.5V, ID=1.8A
1
250
200
150
100
VGS=2.5V, ID=1.7A
VGS=1.8V, ID=1A
0
Coss
50
Crss
VGS=1.5V, ID=1A
0
0.5
1
1.5
2
2.5
3
Qg (nC)
Figure 7: Gate-Charge Characteristics
Ciss
0
3.5
0
5
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
1000
100.0
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
100
Power (W)
ID (Amps)
10us
RDS(ON)
limited
10.0
100us
1.0
1ms
1
0.1
0.1
10
10ms
DC
1
0.1
10s 1s 10 100ms
VDS (Volts)
100
0
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=250°C/W
0
0
0.01
0.1
1
10
100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
20
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
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