AO7414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT-323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. AO7414 and AO7414L are electrically identical. -RoHS Compliant -AO7414L is Halogen Free VDS (V) = 20V ID = 2 A (VGS = 4.5V) RDS(ON) < 62mΩ (VGS = 4.5V) RDS(ON) < 70mΩ (VGS = 2.5V) RDS(ON) < 85mΩ (VGS = 1.8V) SC-70 (SOT-323) Top View D G D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current TA=70°C V Junction and Storage Temperature Range 0.35 W 0.22 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 25 PD TA=70°C Alpha Omega Semiconductor, Ltd. ±8 1.5 ID IDM B Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 2 TA=25°C Power Dissipation A Maximum 20 RθJA RθJL Typ 300 340 280 °C Max 360 425 320 Units °C/W °C/W °C/W www.aosmd.com AO7414 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 25 V TJ=55°C VGS=4.5V, ID=2A 5 0.68 VGS=2.5V, ID=1.8A 56 70 VGS=1.8V, ID=1A 66 85 VDS=5V, ID=2A 15 0.7 DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge V 62 Forward Transconductance Crss 1 90 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Output Capacitance nA 50 VSD Coss ±100 70 TJ=125°C 260 VGS=0V, VDS=10V, f=1MHz VGS=4.5V, VDS=10V, ID=2A mΩ mΩ S 1 V 0.35 A 320 pF 48 pF 27 VGS=0V, VDS=0V, f=1MHz µA A gFS IS Units 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 20 VDS=20V, VGS=0V IDSS RDS(ON) Typ pF 3 4.5 Ω 2.9 3.8 nC 0.4 nC Qgd Gate Drain Charge 0.6 nC tD(on) Turn-On DelayTime 2.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=4.5V, VDS=10V, RL=5Ω, RGEN=6Ω 3.2 ns 21 ns IF=2A, dI/dt=100A/µs 14 3 Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=2A, dI/dt=100A/µs ns 19 3.4 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev1: March 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. www.aosmd.com AO7414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 25 4.5V 18 16 20 2.5V 14 12 ID(A) ID (A) 15 10 2V 8 10 VGS=4.5V, ID=1.8A 6 VGS=1.5V 5 4 VGS=2.5V, ID=1.7A VGS=1.8V, ID=1A 0 0 1 2 3 25°C 0 0 VGS=1.5V, ID=1A 4 125°C 2 0.5 5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 1.60E+00 120 Normalized On-Resistance RDS(ON) (mΩ) 100 80 VGS=1.8V VGS=2.5V 60 VGS=2.5V ID=1.7A VGS=1.8V ID=1A 1.40E+00 1.20E+00 VGS=4.5V ID=1.8A 1.00E+00 VGS=4.5V 40 0 1 2 3 4 5 6 7 8 9 10 8.00E-01 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 120 1.0E+00 ID=2A 1.0E-01 IS (A) RDS(ON) (mΩ) 100 80 125°C 1.0E-02 25°C 125°C 1.0E-03 60 25°C 1.0E-04 1.0E-05 40 1 2 3 4 5 6 7 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO7414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 5 300 Capacitance (pF) VGS (Volts) 350 VDS =10V VDS =10V I =2.2A D ID=3.5A 4 3 2 VGS=4.5V, ID=1.8A 1 250 200 150 100 VGS=2.5V, ID=1.7A VGS=1.8V, ID=1A 0 Coss 50 Crss VGS=1.5V, ID=1A 0 0.5 1 1.5 2 2.5 3 Qg (nC) Figure 7: Gate-Charge Characteristics Ciss 0 3.5 0 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 1000 100.0 TJ(Max)=150°C TA=25°C TJ(Max)=150°C TA=25°C 100 Power (W) ID (Amps) 10us RDS(ON) limited 10.0 100us 1.0 1ms 1 0.1 0.1 10 10ms DC 1 0.1 10s 1s 10 100ms VDS (Volts) 100 0 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=250°C/W 0 0 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 20 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha Omega Semiconductor, Ltd. www.aosmd.com