PHILIPS BF763 Npn 2 ghz wideband transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BF763
NPN 2 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
DESCRIPTION
BF763
PINNING
NPN transistor in a plastic SOT54
(TO-92 variant) envelope.
It is primarily intended for use in RF
amplifiers and oscillators.
PIN
DESCRIPTION
Code: F763
1
emitter
2
base
3
collector
1
2
3
MSB034
Fig.1 SOT54.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CEO
collector-emitter breakdown voltage open base
15
−
−
V
IC
DC collector current
−
−
25
mA
Ptot
total power dissipation
up to Tamb = 60 °C
−
−
360
mW
hFE
DC current gain
IC = 5 mA; VCE = 10 V; Tj = 25 °C
25
−
250
fT
transition frequency
IC = 5 mA; VCE = 10 V; f = 100 MHz −
1.8
−
GHz
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
15
V
VCEO
collector-emitter voltage
open base
−
25
V
IC
DC collector current
−
25
mA
Ptot
total power dissipation
−
360
mW
Tstg
storage temperature
up to Tamb = 60 °C
−65
150
°C
Tj
junction temperature
−
150
°C
THERMAL RESISTANCE
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
September 1995
CONDITIONS
in free air
2
THERMAL RESISTANCE
250 K/W
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BF763
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V(BR)CEO
collector-emitter breakdown voltage IC = 1 mA; IB = 0
15
−
−
V
V(BR)CBO
collector-base breakdown voltage
IC = 10 µA; IE = 0
25
−
−
V
VCE sat
collector-emitter saturation voltage
IC = 10 mA; IB = 1 mA
−
−
0.5
V
ICBO
collector cut-off current
IE = 0; VCB = 10 V
−
−
50
nA
hFE
DC current gain
IC = 5 mA; VCE = 10 V
25
−
250
fT
transition frequency
IC = 5 mA; VCE = 10 V; f = 100 MHz
−
1.8
−
GHz
F
noise figure
IC = 5 mA; VCE = 10 V; f = 800 MHz;
Tamb = 25 °C; Zs = 60 Ω
−
5.0
−
dB
September 1995
3
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BF763
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads (on-circle)
SOT54 variant
c
L2
E
d
A
L
b
1
e1
2
e
D
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
e
e1
L
L1(1)
max
L2
max
mm
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
2.5
Notes
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54 variant
September 1995
REFERENCES
IEC
JEDEC
EIAJ
TO-92
SC-43
4
EUROPEAN
PROJECTION
ISSUE DATE
97-04-14
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BF763
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
5
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