HP MGA-545P8-BLK 1-7 ghz medium power amplifier Datasheet

Agilent MGA-545P8
1–7 GHz Medium Power Amplifier
Data Sheet
Description
Agilent’s MGA-545P8 is an
economical, low current, medium
power, easy-to-use GaAs MMIC
amplifier that offers excellent
power output at 5.8 GHz. Although
optimized for 5.8 GHz applications,
the MGA-545P8 is suitable for other
applications in the 1 to 7 GHz
frequency range.
With the addition of a simple input
match, the MGA-545P8 offers a
small signal gain of 11.5 dB, a
saturated power output of 22 dBm
and a saturated gain of 9.5 dB at
PIN 8
PIN 7 (OUT)
PIN 6
PIN 5
SOURCE
(THERMAL/RF GND)
Pin Connections and Package Marking
5.8 GHz. The MGA-545P8 has a
nominal current consumption of
92 mA in saturated mode and
135 mA in linear mode at a device
voltage of 3.3 V with power added
efficiency of 46% in saturated
mode.
The MGA-545P8 is housed in the
2X2 mm-8L LPCC package. This
package offers good thermal
dissipation and very good high
frequency characteristics making
it appropriate for medium power
applications through 7 GHz.
Simplified Schematic
PIN 1
PIN 2 (IN)
BIAS
PIN 3
PIN 4
FET
INPUT
BOTTOM VIEW
PIN 1
IN
PIN 3
PIN 8
4Tx
PIN 4
OUT
PIN 6
PIN 5
TOP VIEW
Note: Package marking provides orientation and
identification.
“4T”= Device Code
“x” = Date code indicates the month of manufacture.
OUTPUT
& Vd
Specifications
• 3.3 V, 92 mA, 5.825 GHz at saturation
mode
• 22 dBm saturated power across
1-7 GHz
• 9.5 dB gain
• 46% PAE
• 3.3 V, 135 mA, 5.825 GHz at linear
mode
• 11.5 dB small signal gain
• Pout = 16 dBm at 5.6% EVM
• 34 dBm OIP3 at 2.7 V
Features
• Unconditionally stable
• Single +3.3 V operation
• Small package size –
2.0 x 2.0 x 0.75 mm3
• Point MTTF > 300 years [2]
• MSL-1 and Pb-free and Halogen-free
• Tape-and-reel packaging option
available
Applications
The MGA-545P8 is ideal for use as
driver amplifier or power amplifier in:
• 3-4 GHz fixed wireless access (WLL)
• 5-6 GHz fixed wireless access
(HiperLAN/UNII)
• 5-6 GHz WLAN 802.11a NIC and AP
• Other applications in the 1-7 GHz
frequency range
RF GND
Notes:
1. Enhancement mode technology employs a
single positive Vgs, eliminating the need of
negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed
MTTF data.
3. Conform to JEDEC reference outline
MO229 for DRP-N.
MGA-545P8 Absolute Maximum Ratings[1]
Parameter
Units
Absolute Maximum
Vd
Device Voltage, RF output to ground
V
5.0
Pin
CW RF Input Power
dBm
20
θjc
Thermal Resistance [2]
°C/W
124
Pdiss Total Power Dissipation[3]
W
0.8
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
–65 to 150
Notes:
1. Operation of this device in excess of any
of these limits may cause permanent
damage.
2. Thermal resistance measured using
150°C Liquid Crystal Measurement
Technique.
3. Board (package belly) temperature Tb is
25°C. Derate 8 mW/°C for Tb > 51°C.
0.01 µF
1000 pF
VDD
10 pF
50 Ω
RF INPUT
10 pF
1
8
2
7
4Tx
3
6
4
5
4.7 nH
12 pF
50 Ω
RF OUTPUT
OPEN-CIRCUITED STUB
(34 mil x 72 mil)
Figure 1. Production test circuit.
This circuit represents a match for maximum gain and saturated power.
0.01 µF
12 pF
1000 pF
10 pF
4.7 nH
CONTACTOR
10 pF
Figure 2. Close-up of production test board. Rogers 4350 Er = 3.48 ± 0.05, thickness = 10 mils.
2
MGA-545P8 Electrical Specifications
Tc = 25˚C, Vd = 3.3 V, unless otherwise noted
Symbol
Parameter and Test Condition
Gtest_sat
Gain in test circuit at saturation
For all frequencies refer to note [3]
unless noted otherwise
Gtest_ss
Gain in test circuit at small signal
For all frequencies refer to note [3]
unless noted otherwise
Units
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GHz
f = 5.0 GHz
f = 5.825 GHz[1]
f = 6.0 GHz
dB
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GHz
f = 5.0 GHz
f = 5.825 GHz[1]
f = 6.0 GHz
dB
Min.
8.5
10.5
Typ.
20.0
16.3
13.4
11.6
10.05
9.5
8.7
22.4
18.6
15.9
13.5
12
11.5
11.3
Max.
10.5
13.8
Psat
Pout at 2.5 dB gain compression
f = 5.825 GHz[1]
dBm
21.5
22
–
Ids_sat
Drain Current at saturation
f = 5.825 GHz[1]
mA
80
92
115
Idss
Drain Current at small signal
f = 5.825 GHz[1]
mA
95
135
155
P1dB
Output Power at 1 dB compression point
For all frequencies refer to note [3]
unless noted otherwise
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GH
f = 5.0 GHz
f = 5.825 GHz[2]
f = 6.0 GHz
dBm
21.5
21.7
21.3
21.8
21.2
21.0
20.6
PAE
Power Added Efficiency at Psat[4]
For all frequencies refer to note [3]
unless noted otherwise
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GHz
f = 5.0 GHz
f = 5.825 GHz[1]
f = 6.0 GHz
%
46.3
46.0
48
44
45
46
47
40
OIP3
Output Third Order Intercept Point [2.7 V]
f = 5.725 GHz[1]
dBm
EVM
Error Vector Magnitude
Pout = 16 dBm; 54 Mbps data rate
f = 5.725 GHz[2]
%
5.6
NF
Noise Figure
For all frequencies refer to note [3]
unless noted otherwise.
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GHz
f = 5.0 GHz
f = 5.825 GHz[2]
f = 6.0 GHz
dB
2.6
2.7
2.9
3.3
3.6
4.4
5.2
31
34
–
Notes:
1. Measurements made on a fixed tuned production test board (figure 1), which was optimized for gain and saturated power. Excess circuit losses had
been de-embedded from actual measurement. Typical data based on at least 500 parts sample size from 3 wafer lots. Future wafers allocated to this
product may have nominal values anywhere within the upper and lower spec limits.
2. Measurement was taken on demo board at which it was tuned for maximum gain and saturated power. Refer to application note.
3. Measurement was done in a 50 Ω microstrip line, which was tuned for maximum gain and saturated power for each frequency with external double
stub tuners.
−
4. Power Added Efficiency at Psat is calculated using the following formula: η =
Pout = Psat in watts
pa
Vdd × Id
Pin = Input drive power in watts
Vdd = 3.3 V
Id = Ids_sat in Ampere
3
MGA-545P8 Typical Performance, Tc = 25°C, Vd = 3.3 V unless stated otherwise.
24
22
25
22
23
20
21
18
16
14
12
10
1
2
3
4
5
6
17
15
13
16
14
12
11
10
9
8
7
7
2.7 V
3.0 V
3.3 V
4.0 V
18
–40°C
25°C
85°C
19
G-SAT (dB)
2.7 V
3.0 V
3.3 V
4.0 V
SSGAIN (dB)
SSGAIN (dB)
20
1
2
FREQUENCY (GHz)
3
4
5
6
6
1
7
2
Figure 3. Small signal gain vs. frequency and
voltage[1,5].
Figure 4. Small signal gain vs. frequency and
temperature[1,5].
26
3
4
5
6
7
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 5. Saturated gain vs. frequency and
voltage[2,3,5].
24
26
24
24
22
20
2.7 V
3.0 V
3.3 V
4.0 V
18
2
3
4
5
6
22
–40°C
25°C
85°C
21
20
7
1
2
FREQUENCY (GHz)
60
6
55
5
6
18
2.7 V
3.0 V
3.3 V
4.0 V
14
1
7
2
3
4
5
6
7
FREQUENCY (GHz)
Figure 8. Output power at 1 dB gain
compression vs. frequency and voltage[2,5].
35
34
33
4
NF (dB)
PAE (%)
5
Figure 7. Saturated power vs. frequency and
temperature[2,3,5].
50
45
40
3
2
35
30
2
3
4
5
2.7 V
3.0 V
3.3 V
4.0 V
1
6
0
1
FREQUENCY (GHz)
Figure 9. Power added efficiency vs.
frequency and voltage[2,3,5].
4
4
20
FREQUENCY (GHz)
Figure 6. Saturated power vs. frequency and
voltage[2,3,5].
25
1
3
22
16
OUTPUT IP3 (dBm)
16
1
OP1dB (dBm)
P_sat (dBm)
P-SAT (dBm)
23
7
2.7 V
3.0 V
3.3 V
4.0 V
2
3
4
5
6
FREQUENCY (GHz)
Figure 10. Noise figure vs. frequency and
voltage[2,5].
32
31
30
29
28
5.725 GHz
27
26
7
25
2.3
2.6
2.9
3.2
3.5
3.8
4.1
4.4
VOLTAGE (V)
Figure 11. OIP3 vs. voltage at 5.725 GHz[4,5].
150
155
110
135
125
115
105
2.7 V
3.0 V
3.3 V
4.0 V
95
85
75
0
2
4
6
8
10
12
140
100
130
120
2.7
3.3
3.6
3.9
–40°C
25°C
85°C
4.2
VOLTAGE (V)
Pin (dBm)
Figure 12. Device current vs. Pin and
voltage[4,5].
70
2.4
2.7
3.0
3.3
3.6
3.9
4.2
VOLTAGE (V)
Figure 13. Id vs. voltage and temperature (no
RF drive).
Figure 14. Saturated Id vs. voltage and
temperature[3,4].
10
12
2.7 V
3.0 V
3.3 V
4.0 V
9
2.7 V
3.0 V
3.3 V
4.0 V
8
EVM (64QAM;%)
10
EVM (64QAM;%)
3.0
90
80
–40°C
25°C
85°C
110
100
2.4
14
Idsat (mA)
DEVICE CURRENT (mA)
DEVICE CURRENT (mA)
145
8
6
4
7
6
5
4
3
2
2
1
0
-10
-5
0
5
10
15
20
Pout (dBm)
Figure 15. EVM(64QAM) vs. Pout and voltage
at 5.725 GHz[4].
0
-20
-15
-10
-5
0
5
10
Pin (dBm)
Figure 16. EVM(64QAM) vs. Pin and voltage at
5.725 GHz[4].
Notes:
1. Measurement was done in a 50 Ω microstrip line with input and output tuned for maximum gain using double stub-tuners.
2. Measurement was done in a 50 Ω microstrip line with input tuned for gain and output tuned for maximum Psat using double-stub tuners.
3. Measured at 2.5 dB gain compression.
4. Measurement at 5.825 GHz were made on a fixed tuned demo board that was tuned for maximum saturated output power and maximum gain.
5. Circuit losses have been de-embedded from actual measurement.
5
MGA-545P8 Typical Scattering Parameters
Tc = 25°C, Vd = 3.3 V, Zo = 50 Ω
Freq.
GHz
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.5
1.9
2.0
2.4
3.0
4.0
5.0
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
6.0
6.5
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
6
S11
Mag
0.11
0.17
0.25
0.30
0.35
0.40
0.44
0.47
0.50
0.52
0.59
0.61
0.62
0.61
0.62
0.54
0.38
0.34
0.30
0.26
0.21
0.15
0.11
0.08
0.06
0.06
0.10
0.43
0.69
0.87
0.91
0.93
0.90
0.95
0.96
0.93
0.91
0.96
0.95
0.96
Ang
-140.5
-132.4
-133.4
-137.1
-139.0
-144.4
-149.7
-153.9
-158.5
-162.8
179.0
166.5
163.8
153.8
139.3
116.5
87.9
83.6
79.2
75.1
70.9
71.0
82.8
99.7
115.1
161.8
-161.5
-166.1
165.0
117.4
97.6
77.7
63.6
50.7
41.1
30.7
27.9
22.0
14.4
8.0
dB
24.3
24.0
23.7
23.3
22.9
22.4
21.9
21.4
20.9
20.4
18.2
16.7
16.2
14.9
13.5
11.9
11.4
11.3
11.3
11.2
11.1
11.1
10.9
10.9
10.9
10.8
10.8
9.7
6.2
-3.7
-19.0
-19.3
-14.1
-12.1
-12.2
-12.4
-13.1
-12.9
-13.6
-13.6
S21
Mag
16.33
15.85
15.34
14.65
13.96
13.26
12.51
11.80
11.11
10.51
8.09
6.81
6.47
5.58
4.71
3.95
3.70
3.67
3.66
3.62
3.61
3.59
3.53
3.51
3.49
3.48
3.46
3.05
2.05
0.66
0.11
0.11
0.20
0.25
0.25
0.24
0.22
0.23
0.21
0.21
Ang
169.7
160.1
151.5
144.1
136.5
131.2
124.6
119.2
113.9
109.3
89.5
78.0
75.8
65.4
53.0
28.6
0.5
-3.4
-7.2
-11.1
-15.5
-19.6
-23.0
-26.0
-29.2
-33.2
-39.1
-71.8
-104.8
-149.2
-172.2
-6.4
-20.6
-38.3
-54.0
-59.4
-66.6
-79.5
-88.3
-88.0
dB
-31.9
-31.9
-31.9
-31.9
-31.8
-31.8
-31.8
-31.6
-31.6
-31.4
-30.6
-29.9
-29.7
-28.9
-27.6
-25.5
-23.5
-23.4
-23.3
-23.2
-23.1
-23.1
-23.0
-22.9
-22.8
-22.9
-23.0
-25.4
-32.3
-33.2
-26.8
-23.9
-22.9
-21.8
-21.4
-21.1
-20.6
-20.4
-19.8
-19.1
S12
Mag
0.025
0.025
0.026
0.025
0.026
0.026
0.026
0.026
0.026
0.027
0.029
0.032
0.033
0.036
0.042
0.053
0.067
0.068
0.069
0.069
0.070
0.070
0.071
0.072
0.073
0.072
0.071
0.054
0.024
0.022
0.046
0.064
0.072
0.081
0.085
0.088
0.093
0.096
0.103
0.111
Ang
0.0
-0.7
-0.6
1.0
2.4
3.7
4.7
5.8
7.2
7.8
13.2
15.6
16.2
18.2
17.6
10.8
-6.5
-9.5
-12.3
-16.3
-18.8
-22.9
-25.6
-27.7
-30.4
-33.4
-38.4
-70.7
-106.7
55.7
38.8
18.8
8.2
-5.1
-15.7
-25.2
-29.4
-40.0
-44.6
-56.1
Mag
0.04
0.04
0.04
0.04
0.06
0.07
0.07
0.07
0.07
0.08
0.10
0.11
0.11
0.12
0.14
0.19
0.23
0.24
0.25
0.26
0.27
0.28
0.29
0.29
0.30
0.34
0.36
0.47
0.50
0.46
0.42
0.41
0.40
0.42
0.46
0.49
0.53
0.57
0.61
0.62
S22
Ang
3.9
-1.4
-2.7
-4.6
-10.5
-13.2
-17.5
-22.9
-28.3
-31.7
-48.5
-60.5
-67.5
-73.8
-74.6
-89.2
-98.4
-99.5
-100.6
-101.8
-103.9
-106.9
-108.7
-109.9
-108.9
-109.1
-118.8
-136.8
-157.6
172.0
156.3
143.1
129.3
117.2
102.6
87.6
80.2
70.3
62.9
50.3
K
Factor
1.40
1.40
1.39
1.40
1.40
1.38
1.39
1.38
1.40
1.40
1.42
1.45
1.49
1.56
1.54
1.63
1.68
1.71
1.75
1.80
1.83
1.88
1.91
1.91
1.91
1.90
1.91
2.20
4.22
6.38
13.14
8.26
5.90
2.17
1.72
3.00
3.56
1.74
1.84
1.55
MGA-545P8 Typical Noise Parameters at Tc = 25°C, Vd = 3.3 V
Frequency
Fmin
Gopt
GHz
dB
Mag
Ang
Rn/50 Ω
1.0
2.1
0.46
–144
0.15
2.0
2.4
0.44
–133
0.20
3.0
2.5
0.44
–123
0.27
4.0
2.9
0.39
–100
0.43
5.0
3.2
0.26
–77
0.51
6.0
3.5
0.13
–77
0.48
7.0
4.4
0.38
–158
0.28
Device Models
Refer to Agilent’s Web Site
www.agilent.com/view/rf
Ordering Information
Part Number
No. of Devices
Container
MGA-545P8-TR1
3000
7" Reel
MGA-545P8-TR2
10000
13" Reel
MGA-545P8-BLK
100
Antistatic Bag
2x2 LPCC (JEDEC DFP_N) Package Dimensions
D1
D
P
PIN 1
PIN 1
2
R
E1
e
3
b
DIMENSIONS
8
1
4Tx
7
E
6
5
4
L
BOTTOM VIEW
TOP VIEW
A
A
A2
A1
7
END VIEW
SIDE VIEW
SYMBOL
A
MIN.
0.7
NOM.
0.75
MAX.
0.8
A1
A2
b
0
0.02
0.203 REF
0.25
0.05
0.225
0.275
D
D1
E
E1
e
1.9
0.65
1.9
1.45
2
0.8
2
1.6
0.50 BSC
2.1
0.95
2.1
1.75
P
L
0.20
0.35
0.25
0.40
0.30
0.45
PCB Land Pattern and Stencil Design
2.80 (110.24)
2.72 (107.09)
0.70
(27.56)
0.63
(24.80)
0.25
(9.84)
0.22
(8.86)
0.25 (9.84)
PIN 1
∅0.20 (∅7.87)
0.32 (12.79)
PIN 1
0.50 (19.68)
0.50 (19.68)
1.60 (62.99)
1.54 (60.61)
0.25 (9.74)
0.28 (10.83)
SOLDER MASK
0.80
(31.50)
RF TRANSMISSION LINE
0.72
(28.35)
0.60 (23.62)
0.63 (24.80)
0.15 (5.91)
NOTE: DIMENSIONS ARE IN MILLIMETERS
0.55 (21.65)
PCB LAND PATTERN (TOP VIEW)
STENCIL LAYOUT (TOP VIEW)
Device Orientation
REEL
4 mm
CARRIER
TAPE
4Tx
USER
FEED
DIRECTION
COVER
TAPE
8
8 mm
4Tx
4Tx
4Tx
Tape Dimensions
P
P0
P2
D
E
F
W
D1
Tt
t1
10°MAX.
K0
B0
A0
DESCRIPTION
9
10°MAX.
SYMBOL
SIZE (mm)
SIZE (INCH)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A0
B0
K0
P
D1
2.30 ± 0.05
2.30 ± 0.05
1.00 ± 0.05
4.00 ± 0.10
1.00 ± 0.25
0.091 ± 0.004
0.091 ± 0.004
0.039 ± 0.002
0.157 ± 0.004
0.039 ± 0.002
PERFORATION
DIAMETER
PITCH
POSITION
D
P0
E
1.50 ± 0.10
4.00 ± 0.10
1.75 ± 0.10
0.060 ± 0.004
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE
WIDTH
W
0.315 ± 0.012
0.315 ± 0.004
0.010 ± 0.0008
THICKNESS
t1
8.00 + 0.30
8.00 – 0.10
0.254 ± 0.02
COVER TAPE
WIDTH
TAPE THICKNESS
C
Tt
5.4 ± 0.10
0.062 ± 0.001
0.205 ± 0.004
0.0025 ± 0.0004
DISTANCE
CAVITY TO PERFORATION (WIDTH DIRECTION)
CAVITY TO PERFORATION (LENGTH DIRECTION)
F
P2
3.50 ± 0.05
2.00 ± 0.05
0.138 ± 0.002
0.079 ± 0.002
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January 10, 2003
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