Data Sheet N0604N R07DS0850EJ0100 Rev.1.00 Aug 27, 2012 N-channel MOSFET 60 V, 82 A, 6.5 mΩ Description The N0604N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low input capacitance Ciss = 4150 pF TYP. (VDS = 25 V, VGS = 0 V) • High current ID(DC) = ±82 A • RoHS Compliant Ordering Information Part No. N0604N-S19-AY ∗1 Lead Plating Pure Sn (Tin) Packing Package Tube 50 p/tube TO-220 1.9 g TYP. Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Absolute Maximum Ratings (TA = 25°C, all terminals are connected) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current ∗2 Single Avalanche Energy ∗2 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS Ratings 60 ±20 ±82 ±200 116 1.5 150 −55 to +150 35 125 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case (Drain) Thermal Resistance Channel to Ambient Thermal Resistance ∗2 Rth(ch-C) Rth(ch-A) 1.08 83.3 °C/W °C/W Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗ 2. Starting Tch = 25°C, RG = 25 Ω, VDD = 30 V, VGS = 20 → 0 V, L = 100 μH R07DS0850EJ0100 Rev.1.00 Aug 27, 2012 Page 1 of 6 N0604N Chapter Title Electrical Characteristics (TA = 25°C, all terminals are connected) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance ∗1 Symbol IDSS IGSS VGS(off) | yfs | Drain to Source On-state Resistance ∗1 RDS(on) Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage ∗1 Reverse Recovery Time Reverse Recovery Charge MIN. TYP. MAX. 1 ±100 4.0 5.1 6.5 2.0 30 Unit μA nA V S mΩ Test Conditions VDS = 60 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 5 V, ID = 41 A VGS = 10 V, ID = 41 A 4150 310 165 pF pF pF VDS = 25 V, VGS = 0 V, f = 1 MHz td(on) tr td(off) tf QG QGS QGD VF(S–D) trr 24 8 64 7 75 21 21 VDD = 30 V, ID = 41 A, VGS = 10 V, RG = 0 Ω 38 ns ns ns ns nC nC nC V ns Qrr 39 nC 1.5 VDD = 48 V, VGS = 10 V, ID = 82 A IF = 82 A, VGS = 0 V IF = 82 A, VGS = 0 V, di/dt = 100 A/μ s ∗ Note: 1. Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS ID VDS 0 10% 10% tr td(off) Wave Form τ VDD Starting Tch 90% VDS VGS 0 τ = 1 μs Duty Cycle ≤ 1% td(on) ton tf toff TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω R07DS0850EJ0100 Rev.1.00 Aug 27, 2012 RL VDD Page 2 of 6 N0604N Chapter Title Typical Characteristics (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE TOTAL POWER DISSIPATION vs. OPERATING AREA CASE TEMPERATURE 150 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 140 120 100 80 60 40 20 0 100 50 0 0 25 50 75 100 125 150 175 0 TC - Case Temperature - °C 25 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 IDC(pulse) = 200 A 10 ms PW 100 = 10 0 μ s 10 RD o S( n d ite im )L s 1m ID - Drain Current - A IDC(DC) = 82 A DC 1 Power Dissipation Limited TC = 25°C Single Pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V rth(t) - Transient Thermal Resistance - °C/W TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 Rth(ch-A) = 83.3 °C/W 100 10 1 Rth(ch-C) = 1.08 °C/W 0.1 Single pulse 0.01 0.1 m 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s R07DS0850EJ0100 Rev.1.00 Aug 27, 2012 Page 3 of 6 N0604N Chapter Title DRAIN CURRENT vs. FORWARD TRANSFER CHARACTERISTICS DRAIN TO SOURCE VOLTAGE 100 300 Pulsed 10 ID - Drain Current - A ID - Drain Current - A VGS = 10 V 200 100 TA = 125 °C 75 °C 25 °C –25 °C 1 0.1 Pulsed VDS = 10 V 0.01 0 0.001 0 1 2 3 4 5 0 3 4 5 GATE TO SOURCE CUT-OFF VOLTAGE vs. FORWARD TRANSFER ADMITTANCE vs. CHANNEL TEMPERATURE DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 4 3 2 1 VDS = 10 V ID = 1.0 mA 0 -50 RDS(on) - Drain to Source On-state Resistance - mΩ 2 0 50 100 6 VGS - Gate to Source Voltage - V 100 TA = 125°C 75°C 25°C –25°C 10 Pulsed VDS = 5 V 1 150 0.1 1 10 100 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE VOLTAGE 14 Pulsed 12 10 8 VGS = 10 V 6 4 2 0 1 10 100 ID - Drain Current - A R07DS0850EJ0100 Rev.1.00 Aug 27, 2012 1000 RDS(on) - Drain to Source On-state Resistance - mΩ VGS(off) - Gate to Source Cut-off Voltage - V VDS - Drain to Source Voltage - V 1 20 Pulsed ID = 41 A 15 10 5 0 0 5 10 15 20 VGS - Gate to Source Voltage - V Page 4 of 6 N0604N Chapter Title DRAIN TO SOURCE ON-STATE RESISTANCE vs. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 14 10000 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ CHANNEL TEMPERATURE 12 10 8 6 Pulsed V GS = 10 V ID = 41 A 4 2 0 -50 1000 Coss VGS = 0 V f = 1 MHz 50 100 150 0.01 Tch - Channel Temperature - °C 0.1 1 10 100 VDS - Drain to Source Voltage - V DYNAMIC INPUT CHARACTERISTICS 1000 VGS - Gate to Source Voltage - V 10 td(off) 100 td(on) tr 10 VDD = 30 V VGS =10 V RG = 0 Ω tf 1 VDD = 12 V 30 V 48 V 8 6 4 2 ID = 82 A 0 0.1 1 10 100 0 ID - Drain Current - A 20 40 60 80 QG - Gate Charge - nC REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 1000 VGS = 10 V 100 trr - Reverse Recovery Time - ns IF - Diode Forward Current - A Crss 100 0 SWITCHING CHARACTERISTICS td (on), tr, td (off), tf - Switching Time - ns Ciss 10 0V 1 0.1 Pulsed 0.01 0 0.4 0.8 1.2 VF(S-D) - Source to Drain Voltage - V R07DS0850EJ0100 Rev.1.00 Aug 27, 2012 1.6 10 VGS = 0 V di/dt = 100 A/μ s 1 0.1 1 10 100 IF - Diode Forward Current - A Page 5 of 6 N0604N Chapter Title Package Drawing (Unit: mm) 4.8 MAX. 10.2 MAX. 3.6±0.2 1.3±0.2 1.52±0.2 0.8±0.1 12.7 MIN. 3.0 TYP. 4 15.9 MAX. 8.7 TYP. 6.3 MIN. 2.8±0.3 TO-220 0.5±0.2 2.54 TYP. 2.4±0.2 2.54 TYP. 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1 2 3 Equivalent Circuit Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. R07DS0850EJ0100 Rev.1.00 Aug 27, 2012 Page 6 of 6 Revision History N0604N Data Sheet Rev. Date Page 1.00 Aug 27, 2012 − Description Summary First Edition Issued All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or 5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product. the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics. 6. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products. 11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-651-700, Fax: +44-1628-651-804 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949 Tel: +65-6213-0200, Fax: +65-6213-0300 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2012 Renesas Electronics Corporation. All rights reserved. Colophon 2.2