AOSMD AOB10B65M1 This aos product reliability report summarizes the qualification result for aob10b65m1 Datasheet

AOS Semiconductor
Product Reliability Report
AOB10B65M1,
rev A
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
www.aosmd.com
1
This AOS product reliability report summarizes the qualification result for AOB10B65M1.
Accelerated environmental tests are performed on a specific sample size, and then followed by
electrical test at end point. Review of final electrical test result confirms that AOB10B65M1
passes AOS quality and reliability requirements. The released product will be categorized by the
process family and be routine monitored for continuously improving the product quality.
Table of Contents:
I.
II.
III.
IV.
Product Description
Package and Die information
Reliability Stress Test Summary and Results
Reliability Evaluation
I. Product Description:
• Latest AlphaIGBT (аIGBT) technology
• 650V breakdown voltage
• Very fast and soft recovery freewheeling diode
• High efficient turn-on di/dt controllability
• Low VCE(SAT) enables high efficiencies
• Low turn-off switching loss and softness
• Very good EMI behavior
• High short-circuit ruggedness
Details refer to the datasheet.
II. Die / Package Information:
Process
Package Type
Lead Frame
Die Attach
Bond
Mold Material
AOB10B65M1
Standard sub-micron
TM
650V Alpha IGBT with Diode
TO263
Bare Cu
Solder Paste
Al wire
Epoxy resin with silica filler
2
III. Reliability Stress Test Summary and Results
Test Item
Test Condition
Duration
Total
Sample
Size
Number
of
Failures
Reference
Standard
HTGB
Temp = 175°C ,
Vge=100% of Vgemax
168 / 500 /
1000 hours
924 pcs
0
JESD22-A108
HTRB
Temp = 175°C ,
Vce=80% of Vcemax
168 / 500 /
1000 hours
924 pcs
0
JESD22-A108
96 hours
924 pcs
0
JESD22-A110
1000 hours
924 pcs
0
JESD22-A101
130°C , 85%RH,
33.3 psia,
Vce = 80% of Vcemax
up to 42V
85°C , 85%RH,
Vce = 80% of Vcemax
up to 100V
HAST
H3TRB
Autoclave
121°C , 29.7psia,
RH=100%
96 hours
924 pcs
0
JESD22-A102
Temperature
Cycle
-65°C to 150°C ,
air to air,
1000 cycles
924 pcs
0
JESD22-A104
HTSL
Temp = 175°C
1000 hours
231 pcs
0
JESD22-A103
Power
Cycling
Tj = 100°C
3.5min on / 3.5min off 
8572 cycles
924 pcs
0
AEC Q101
Resistance to
Temp = 270°C
15 seconds
30 pcs
0
JESD22-B106
Solder Heat
Note: The reliability data presents total of available generic data up to the published date.
IV. Reliability Evaluation
FIT rate (per billion): 0.65
MTTF = 174680 years
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one
failure per billion hours.
2
9
Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 0.65
9
MTTF = 10 / FIT = 174680 years
Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from burn-in tests
H = Duration of burn-in testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
55 deg C
70 deg C
85 deg C
100 deg C
125 deg C
Af
758
256
95
38
9.7
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV / K
150 deg C
175 deg C
2.9
1
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