OPTEK OPR2800T Infrared light emitting diode Datasheet

Infrared Light Emitting Diode
OPR2800, OPR2800T
Features:
•
•
•
•
•
High-power GaAIAs
Matches PLCC-2 footprint
875 nm wavelength
Wide beam angle
Wide operating temperature range (-55o C to +100o C)
Description:
The OPR2800 is a GaAIAs infrared LED mounted in a surface mount chip carrier (SMCC) package with a flat lens
window that allows a wide beam angle. The SMCC format has a lower height profile than the PLCC-2 package
and mounts in the same footprint. The device is suitable for use in single device or array applications. The
OPR2800 is spectrally matched to the OPR5500 phototransistor.
See Application Bulletin 237 for handling instructions.
Ordering Information
Applications:
•
•
Non-contact position sensing
Datum detection
•
•
Machine automation
Part
Number
Optical encoding
LED Peak
Total
Wavelength Beam Angle
OPR2800
OPR2800T
875 nm
Packaging
Waffle Pack
Tape & Reel
100°
Warning: Front
Window is pressure
sensitive. Do not
apply pressure or
high vacuum to
window.
2
Anode Indicator
1
Pin #
LED
1
Anode
2
Cathode
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 [email protected] www.optekinc.com
Issue B 03/2012
Page 1 of 2
Infrared Light Emitting Diode
OPR2800, OPR2800T
Absolute Maximum Ratings (TA = 25° C unless otherwise noted)
-55o C to +125o C
Storage and Operating Temperature Range
30 V
Reverse Voltage
Continuous Forward Current
50 mA
Solder reflow time within 5°C of peak temperature is 20 to 40 seconds(1)
250° C
130 mW(2)
Power Dissipation
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL
Ee (APT)
PARAMETER
MIN
Apertured Radiant Incidence
TYP
MAX
UNITS
2
0.2
-
-
mW/cm
TEST CONDITIONS
IF = 20 mA(3)
VF
Forward Voltage
-
-
1.50
V
IF = 50 mA
IR
Reverse Current
-
-
100
µA
VR= 2.0 V
λP
Wavelength at Peak Emission
875
-
nm
IF = 10 mA
θHP
Emission Angle at Half Power Points
-
100
-
Degree
IF = 20 mA
tr, tf
Output Rise Time, Output Fall Time
-
-
500
ns
IF(PK) = 100 mA, PW = 10 µs,
D.C. = 10.0%
Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. Derate linearly at 1.30 mW/° C above 25° C.
3. Ee(APT) is a measurement of the apertured radiant incidence upon a sensing area 0.081” (2.06 mm) in diameter, perpendicular to and
centered on the mechanical axis of the lens and 0.590” (14.99 mm) from the measurement surface. EE(APT) is not necessarily uniform
within the measured area.
OPR2800
Forward Voltage vs Forward Current
vs Temperature
Optical Power vs IF vs
Temperature
3.5
1.8
Normalized at 50 mA and 20° C
1.7
3.0
-60° C
-40° C
-20° C
0° C
20° C
40° C
60° C
80° C
100° C
120° C
Normalized Optical Power
Typical Forward Voltage (V)
1.6
1.5
1.4
1.3
-60° C
-40° C
-20° C
0° C
20° C
40° C
60° C
80° C
100° C
120°C
1.2
1.1
1.0
2.5
2.0
1.5
1.0
0.5
0.0
0.9
0
10
20
30
40
50
60
70
Forward Current (mA)
80
90
100
0
10
20
30
40
50
60
70
80
90
100
Forward Current IF (mA)
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Issue B 03/2012
Page 2 of 2
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 [email protected] www.optekinc.com
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