To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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BCR3KM-14L Triac Low Power Use REJ03G0330-0100 Rev.1.00 Aug.20.2004 Features • • • • • Insulated Type • Planar Passivation Type • UL Recognized : Yellow Card No. E223904 File No. E80271 IT (RMS) : 3 A VDRM : 700 V IFGTI, IRGTI, IRGTⅢ : 30 mA Viso : 2000 V Outline TO-220FN 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 2 3 Applications 240-V AC electric equipment, washing machine, vacuum cleaner, garbage disposer, solenoid driver, small motor control, and other general purpose control applications Maximum Ratings Parameter Note1 Repetitive peak off-state voltage Non-repetitive peak off-state voltageNote1 Rev.1.00, Aug.20.2004, page 1 of 7 Symbol Voltage class 14 Unit VDRM VDSM 700 840 V V BCR3KM-14L Parameter RMS on-state current Symbol IT (RMS) Ratings 3.0 Unit A Surge on-state current ITSM 30 A I2 t 3.7 A2s PGM PG (AV) VGM IGM Tj Tstg — Viso 3 0.3 6 0.5 – 40 to +125 – 40 to +125 2.0 2000 W W V A °C °C g V Symbol Min. Typ. Max. Unit IDRM VTM — — — — 2.0 1.6 mA V Tj = 125°C, VDRM applied Tc = 25°C, ITM = 4.5 A, Instantaneous measurement I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360° conduction, Tc = 108°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1·T2·G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Test conditions Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ VFGTΙ VRGTΙ VRGTΙΙΙ — — — — — — 1.5 1.5 1.5 V V V Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Gate trigger currentNote2 Ι ΙΙ ΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ — — — — — — 30 30 30 mA mA mA Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω VGD Rth (j-c) (dv/dt)c 0.2 — 5 — — — — 4.0 — V °C/W V/µs Gate non-trigger voltage Thermal resistance Tj = 125°C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125°C Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = –1.5 A/ms 3. Peak off-state voltage VD = 400 V Rev.1.00, Aug.20.2004, page 2 of 7 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR3KM-14L Performance Curves 102 7 Tj = 25°C 5 3 2 Rated Surge On-State Current 40 Surge On-State Current (A) On-State Current (A) Maximum On-State Characteristics 101 7 5 3 2 100 7 5 3 2 15 10 5 2 3 4 5 7 101 2 3 4 5 7 102 Gate Trigger Current vs. Junction Temperature PGM = 3W PG(AV) = 0.3W VGT = 1.5V IGM = 0.5A 100 IRGT I Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Characteristics (I, II and III) 103 7 5 3 3 2 102 7 5 3 3 2 Typical Example IRGT III IFGT I, IRGT I 101 –60 –40 –20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Rev.1.00, Aug.20.2004, page 3 of 7 Transient Thermal Impedance (°C/W) Gate Voltage (V) 20 Conduction Time (Cycles at 60Hz) IFGT I, IRGT III VGD = 0.2V 10–1 –1 10 2 3 5 7101 2 3 5 7102 2 3 5 7103 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 25 On-State Voltage (V) 102 7 5 3 2 VGM = 6V 7 5 3 2 30 0 100 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 101 7 5 3 2 35 102 2 3 5 7 103 2 3 5 7 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) BCR3KM-14L 102 7 5 4 3 2 On-State Power Dissipation (W) 5.0 101 7 5 4 3 2 100 102 2 3 5 7103 2 3 5 7104 2 3 5 7105 2.0 1.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Allowable Case Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current Curves apply regardless of conduction angle 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 160 Ambient Temperature (°C) Case Temperature (°C) 360° Conduction Resistive, 3.0 inductive loads RMS On-State Current (A) 140 All fins are black painted 140 aluminum and greased 120 × 120 × t2.3 120 100 × 100 × t2.3 100 60 × 60 × t2.3 80 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads Natural convection 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 4.0 Conduction Time (Cycles at 60Hz) 160 Ambient Temperature (°C) Maximum On-State Power Dissipation 0 0.5 1.0 1.5 2.0 2.5 RMS On-State Current (A) Rev.1.00, Aug.20.2004, page 4 of 7 3.0 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 105 7 Typical Example 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) BCR3KM-14L 103 7 5 4 3 2 Latching Current vs. Junction Temperature Latching Current (mA) Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 102 7 5 3 2 101 7 5 3 + + 2 T2–, G– Typical Example T2 , G 100 –60 –40 –20 0 20 40 60 80 100 120 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage vs. Rate of Rise of Off-State Voltage 140 160 Typical Example Tj = 125°C 140 120 100 80 I Quadrant III Quadrant 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs) Commutation Characteristics Gate Trigger Current vs. Gate Current Pulse Width Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Typical Example Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz Minimum Characteristics Value I Quadrant III Quadrant 100 100 T2+, G– Typical Example Breakover Voltage vs. Junction Temperature Typical Example 101 7 5 4 3 2 Distribution Junction Temperature (°C) 160 102 7 5 4 3 2 103 7 5 3 2 Junction Temperature (°C) 2 3 4 5 7 101 2 3 4 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Rev.1.00, Aug.20.2004, page 5 of 7 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Holding Current vs. Junction Temperature 103 7 5 4 3 2 Typical Example IRGT III IRGT I IFGT I 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (µs) BCR3KM-14L Gate Trigger Characteristics Test Circuits 6Ω 6Ω A 6V V 6Ω A V 330Ω Test Procedure II Test Procedure I 6V A 6V 330Ω V 330Ω Test Procedure III Rev.1.00, Aug.20.2004, page 6 of 7 BCR3KM-14L Package Dimensions TO-220FN EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material 2.0 Cu alloy 2.8 ± 0.2 6.5 ± 0.3 3 ± 0.3 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 Symbol Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Straight type Plastic Magazine (Tube) 50 Type name +A Lead form Plastic Magazine (Tube) 50 Type name +A – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 7 of 7 Standard order code example BCR3KM-14LA BCR3KM-14LA-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. 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