AO4437 12V P-Channel MOSFET General Description Product Summary The AO4437 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. VDS (V) = -12V ID = -11 A (VGS = -4.5V) RDS(ON) < 16mΩ (VGS = -4.5V) RDS(ON) < 20mΩ (VGS = -2.5V) RDS(ON) < 25mΩ (VGS = -1.8V) ESD Rating: 4KV HBM 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current A Pulsed Drain Current B Junction and Storage Temperature Range Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. ±8 V ID -9 IDM -20 W 2.1 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 3 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V -11 TA=70°C TA=25°C Power Dissipation A Maximum -12 RθJA RθJL Typ 31 63 21 °C Max 40 75 30 Units °C/W °C/W °C/W AO4437 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Conditions Min ID=-250µA, VGS=0V -12 -1 TJ=55°C -5 ±1 µA ±10 µA Gate Threshold Voltage VDS=VGS ID=-250µA -0.3 VGS=-4.5V, VDS=-5V -20 VGS=-4.5V, ID=-11A TJ=125°C mΩ mΩ mΩ IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss 38 -0.74 3960 VGS=0V, VDS=-6V, f=1MHz S -1 V -4.5 A 4750 pF 910 pF 757 pF VGS=0V, VDS=0V, f=1MHz 6.9 8.5 Ω 37 47 nC VGS=-4.5V, VDS=-6V, ID=-11A 4.5 nC SWITCHING PARAMETERS Total Gate Charge Qg Gate Source Charge 21 20 IS=-1A,VGS=0V Qgs 16 17 25 Diode Forward Voltage Gate resistance 12.4 15.9 VSD Rg A 20.4 VDS=-5V, ID=-11A Reverse Transfer Capacitance -1 VGS=-2.5V, ID=-10A Forward Transconductance Output Capacitance -0.55 VGS=-1.8V, ID=-6A gFS Crss µA VDS=0V, VGS=±8V On state drain current Coss Units VDS=0V, VGS=±4.5V VGS(th) Static Drain-Source On-Resistance Max V VDS=-9.6V, VGS=0V ID(ON) RDS(ON) Typ Qgd Gate Drain Charge 11 nC tD(on) Turn-On Delay Time 15 ns tr Turn-On Rise Time 43 ns tD(off) Turn-Off Delay Time tf trr Turn-Off Fall Time Qrr VGS=-4.5V, VDS=-6V, RL=0.55Ω, RGEN=3Ω 158 ns 95 ns IF=-11A, dI/dt=100A/µs 64 Body Diode Reverse Recovery Charge IF=-11A, dI/dt=100A/µs 50 ns nC Body Diode Reverse Recovery Time A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev3: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO4437 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 20 -2.0V VDS=-5V -8.0V 8 6 -1.5V 10 -ID(A) -ID (A) 15 125°C 4 VGS=-1.0V 25°C 5 2 0 0 0 0.2 0.4 0.6 0.8 1 0.2 0.4 -VDS (Volts) Fig 1: On-Region Characteristics 1 1.2 1.4 Normalized On-Resistance 1.4 25 RDS(ON) (mΩ ) 0.8 -VGS(Volts) Figure 2: Transfer Characteristics 30 VGS=-1.8V 20 VGS=-2.5V 15 ID=-6A, VGS=-1.8V ID=-10A, VGS=-2.5V 1.2 ID=-11A, VGS=-4.5V 1.0 VGS=-4.5V 10 0.8 0 2 4 6 8 10 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 40 1E+01 35 125°C 1E+00 30 ID=-11A 1E-01 25 -IS (A) RDS(ON) (mΩ ) 0.6 20 15 25°C 1E-02 1E-03 10 1E-04 125°C 25°C 5 1E-05 0 0.0 0 2 4 6 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 8 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4437 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6400 5.00E+00 Capacitance (pF) -VGS (Volts) 5600 VDS=-6V ID=-11A 4.00E+00 3.00E+00 2.00E+00 Ciss 4800 4000 3200 2400 1600 1.00E+00 Coss 800 0.00E+00 Crss 0 0 5 10 15 20 25 30 35 40 45 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 40 TJ(Max)=150°C TA=25°C TJ(Max)=150°C TA=25°C 10µs 100µs 10.0 30 Power (W) -ID (Amps) 10 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 RDS(ON) limited 5 1ms 10ms 1.0 0.1s 1s 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000