UMS CHA7114 X band high power amplifier Datasheet

CHA7114
RoHS COMPLIANT
X Band High Power Amplifier
GaAs Monolithic Microwave IC
Vg2 Vd2
Description
Main Features
0.25µm Power pHEMT Technology
8.5–11.5GHz Frequency Range
8W Output Power @ 4dBcp
High PAE: > 40% @ 4dBcp
20dB nominal Gain
Quiescent Bias point: Vd = 8V, Id = 2A
Chip size: 4.41 x 3.31 x 0.07mm
Vg1 Vd1
IN
OUT
Vg1 Vd1
Vg2 Vd2
50
Pout (dBm) & PAE (%) & Gain (dB)
The CHA7114 is a monolithic two-stage
GaAs high power amplifier designed for
X band applications.
This device is manufactured using a UMS
0.25µm power pHEMT process, including,
via holes through the substrate and air
bridges.
To simplify the assembly process:
• The backside of the chip is both RF and
DC grounded
• Bond pads and back side are gold
plated for compatibility with eutectic die
attach method and thermo-compression
bonding process.
45
PAE @ 4dBc
40
Pout @ 4dBc
35
30
25
20
Linear Gain
15
Pulse : 25µs 10%
10
8
8,5
9
9,5
10
10,5
11
11,5
12
Frequency (GHz)
Main Characteristics
Tamb = +25°C (Tamb is the back-side of the chip)
Vd = 8V, Id (Quiescent) = 2A, Pulse width = 25µs, Duty cycle = 10%
Symbol
Top
Fop
P_4dBcp
G
Parameter
Min
Operating temperature range
Operating frequency range
Typ
-40
8.5
Max
Unit
+80
11.5
°C
GHz
Output power @ 4dBcp @ 25°C
8
W
Small signal gain @ 25°C
20
dB
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Ref : DSCHA7114-0197 - 16 Jul 10
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax : +33 (0) 1 69 33 03 09
X-band High Power Amplifier
CHA7114
Electrical Characteristics
Tamb = 25°C, Vd = 8V, Id (Quiescent) = 2A, Pulse wi dth = 25µs, Duty cycle=10%
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency
8.5
11.5
GHz
G
Small signal gain
17.5
20
23
dB
G_T
Small signal gain variation versus
-0.033
dB/°C
temperature
RLin
Input Return Loss
8
10
dB
RLout
Output Return Loss
6
8
dB
Psat
Saturated output power
39.8
dBm
Psat_T
Saturated output power variation
-0.008
dB/°C
versus temperature
P_4dBcp
Output power @ 4dBcp (2)
38
39
dBm
PAE_4dBcp Power Added Efficiency @ 4dBcp
36
42
%
Id
Supply drain current
2.3
2.6
A
Vd1, Vd2
Drain supply voltage (2)
8.0
8.5
V
Id_q
Supply quiescent drain current (1)
2.0
A
Vg1, Vg2
Gate Power supply voltage
-4.0
V
Top
Operating temperature range
-40
+80
°C
(1) Parameter to be adjusted by tuning of Vg
(2) 0.5V variation on Vd leads to around 0.4dB variation of the output power (impact on
robustness see Maximum ratings)
Absolute Maximum Ratings (1)
Tamb = 25°C
Symbol
Cmp
Vd
Id
Id_sat
Vg
Tj
Tstg
Parameter
Compression level (2)
Drain Power supply voltage (3)
Drain Power supply quiescent current
Drain Power supply current in saturation
Gate Power supply voltage
Maximum junction temperature (4)
Storage temperature range
Values
6
10
2.5
3
-8
175
-55 to +125
Unit
dB
V
A
A
V
°C
°C
(1)
Operation of this device above anyone of these parameters may cause permanent
damage.
(2)
For higher compression the level limit can be increased by decreasing the voltage
Vd using the rate 0.5V/dBcp
(3)
Without RF input power
(4)
Equivalent Thermal Resistance to Backside: 5.6°C/W for backside temp. of 80°C.
[ Junction Temperature comes from: Tj = Tbackside + ETRB x (Dissipated Power)
Where ETRB stands for Equivalent Thermal Resistance to Backside. ]
Ref. : DSCHA7114-0197 - 16 Jul 10
2/8
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
X band High Power Amplifier
CHA7114
Typical measured characteristics
Measurements on Jig:
Vd = 8V, Vg = -4.0V, Id (Quiescent) = 2.2A, Pulse width = 25µs, Duty cycle = 10%
30
28
Linear gain (dB)
26
24
22
20
18
16
-40°C
14
80°C
12
20°C
10
8
8,5
9
9,5
10
10,5
11
11,5
12
11,5
12
Frequency (GHz)
Linear gain versus frequency and temperature
42
41
40
Pout (dBm)
39
38
37
36
35
-40°C
34
80°C
33
20°C
32
8
8,5
9
9,5
10
10,5
11
Frequency (GHz)
Output Power @ 4dBcp versus frequency and temperature
Ref : DSCHA7114-0197 - 16 Jul 10
3/8
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
X-band High Power Amplifier
CHA7114
50
48
46
PAE (%)
44
42
40
38
36
-40°C
34
80°C
32
20°C
30
8
8,5
9
9,5
10
10,5
11
11,5
12
11,5
12
Frequency (GHz)
PAE @ 4dBcp versus frequency and temperature
4
3,5
3
Id (A)
2,5
2
-40°C
1,5
80°C
20°C
1
0,5
0
8
8,5
9
9,5
10
10,5
11
Frequency (GHz)
Id @ 4dBcp versus frequency and temperature
Ref. : DSCHA7114-0197 - 16 Jul 10
4/8
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
X band High Power Amplifier
CHA7114
41
39
Pout (dBm)
37
8GHz
8.4GHz
8.8GHz
9.2GHz
9.6GHz
10GHz
10.4GHz
10.8GHz
11.2GHz
11.6GHz
12GHz
35
33
31
29
27
25
-1
0
1
2
3
4
5
6
7
8
9
Compression (dB)
Output Power @ 25°C versus compression and frequenc y
60
50
PAE (%)
40
8GHz
8.4GHz
8.8GHz
9.2GHz
9.6GHz
10GHz
10.4GHz
10.8GHz
11.2GHz
11.6GHz
12GHz
30
20
10
0
-1
0
1
2
3
4
5
6
7
8
Compression (dB)
PAE @ 25°C versus compression and frequency
Ref : DSCHA7114-0197 - 16 Jul 10
5/8
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
9
X-band High Power Amplifier
CHA7114
16 15 14 13 12
11
1
10
2
9
3 4
5 6 7
8
Chip Mechanical Data and Pin references
Chip width and length are given with a tolerance of +/- 35µm
Chip thickness = 70µm +/- 10µm
HF pads (1, 10) = 118µm x 196µm
DC pads (3, 4, 5, 6, 7, 12, 13, 14, 15, 16) = 96µm x 96µm
DC pads (8, 11) = 186µm x 96 µm
Pin number
2, 9
3, 7, 12, 16
1
4, 6, 13, 15
G1, G2
IN
Vg1R, Vg2R
5, 8, 11, 14
10
Vd1, Vd2
OUT
Ref. : DSCHA7114-0197 - 16 Jul 10
Pin name
Description
Not Connected
Not Connected
Input RF port
Vg: Negative supply voltage (through divided bridge
Network)
Vd: Positive supply voltage
Output RF port
6/8
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
X band High Power Amplifier
CHA7114
Bonding recommendations
Port
Connection
External capacitor
Vd1, Vd2
Inductance (Lbonding) = 0.3nH
2 gold wires bondings (550 µm max)
Inductance (Lbonding) = 0.3nH
2 gold wires bondings (550µm max)
Inductance ≤ 1nH
Vg1R, Vg2R
Inductance ≤ 1nH
IN
OUT
C1 ~ 100pF
C1 ~ 100pF
C2 ~ 10nF
Assembly recommendations (drain voltage pulsed mode operation)
Vg
Vd
IN
OUT
Vg
Vd
C1=100pF
C2=10nF
Vg: gate supply voltage
Vd: drain supply voltage
Ref : DSCHA7114-0197 - 16 Jul 10
7/8
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
X-band High Power Amplifier
CHA7114
Ordering Information
Chip form
:
CHA7114-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorized for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S
Ref. : DSCHA7114-0197 - 16 Jul 10
8/8
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
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